研究目的
Developing a nonlinear equivalent-circuit model for thin-film magnetic material based RF devices to predict the threshold power level, nonlinear insertion loss, and frequency selectivity of the device.
研究成果
The developed nonlinear equivalent-circuit model successfully predicts the threshold power level, nonlinear insertion loss, and frequency selectivity of thin-film magnetic material based RF devices, offering a valuable tool for designing and analyzing such devices.
研究不足
The model is currently limited to simulating devices within a certain size range and may require further calibration for wider bandwidth operation.
1：Experimental Design and Method Selection:
The ferromagnetic resonance is modeled by a RLC parallel circuit with parameters derived from Kittel’s equations. The nonlinear effect in magnetic material is represented by a pendulum model.
2：Sample Selection and Data Sources:
The measurement results of a FSL in literature are used as a reference.
3：List of Experimental Equipment and Materials:
YIG thin-film with specific dimensions and properties.
4：Experimental Procedures and Operational Workflow:
The equivalent circuit is implemented in ADS for simulation.
5：Data Analysis Methods:
The model's capability is demonstrated by predicting the threshold power level, frequency selectivity, and nonlinear insertion loss.
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