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- 2018
- thin-film transistors
- N2O plasma treatment.
- amorphous InGaZnO
- gate-bias stress
- stability
- Electronic Science and Technology
- Peking University
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Numerical analysis of earth-abundant Cu2ZnSn(SxSe1-x)4 solar cells based on Spectroscopic Ellipsometry results by using SCAPS-1D
摘要： Mixed chalcogenide CZTSSe with earth abundant elements, inexpensive, environmental-friendly and impressive photovoltaic performance is a promising absorber material for kesterite thin film solar cells of third generation. In this work, a numerical simulation of p-CZTSSe/n-CdS heterojunction solar cells have been presented using one dimensional Solar Capacitance Simulator. The influence of composition, absorber thickness, defect density and working temperature on Voc, Jsc, FF and power conversion efficiency has been investigated. The optimized cell shows 23.16% efficiency with a Voc ~ 0.724 V corresponding to 40% of the ratio.
关键词： Composition and Spectroscopic Ellipsometry,Absorption coefficient,CZTSSe,Thin film solar cell,Third generation,SCAPS,Efficiency
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE International Conference on Power, Electrical, and Electronics and Industrial Applications (PEEIACON) - Dhaka, Bangladesh (2019.11.29-2019.12.1)] 2019 IEEE International Conference on Power, Electrical, and Electronics and Industrial Applications (PEEIACON) - A Numerical Analysis of N-MoTe <sub/>2</sub> in Back Contact of CdTe Solar Cell
摘要： Thin-film PV cells with low-cost attractive materials are more appropriate over high-cost silicon-based solar cells as free renewable energy sources. Cadmium Telluride (CdTe) PV cells are widely investigated as one of the ultra-thin film PV cells. They have broadly researched to increase efficiency by improving different front contact and back contact material. the effect of unintentionally formed n-type Molybdenum Telluride (n-MoTe2) in the back contact interface between the Cadmium Telluride (CdTe) absorber layer and Mo layer has been investigated from a numerical analysis by the facilitation of AMPS-1D software. The variation of short circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and efficiency (η) are analyzed by changing four parameters like (i) layer thickness (ii) operating temperature (iii) donor concentration and (iv) sun intensity. From the numerical analysis a moderate performance is observed, where the efficiency of the solar cell is found about 16.532%, Jsc is 21.298 mAcm-2, Voc is 0.99 V and FF is 0.863 for the layer thickness, donor concentration, operating temperature and sun intensity at 60 nm, 1×1016cm-3, 350K, and 1.1 suns respectively.
关键词： numerical analysis,CdTe,Thin film PV cells,MoTe2
更新于2025-09-23 15:21:01
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Deposition of boron-doped nanocrystalline silicon carbide thin films using H2-Ar mixed dilution for the application on thin film solar cells
摘要： Hydrogen-argon mixed dilution has been applied for the deposition of boron-doped nanocrystalline silicon carbide (nc-SiCx) thin films. The variations of structural, compositional, electrical and optical properties with the varying H2/Ar ratio are systemically investigated through various characterizations. It is shown that by using H2-Ar mixed dilution for deposition, B-doped nc-SiCx thin film possessing both wide optical band gap (~2.22 eV) and high conductivity (~1.9 S/cm) can be obtained at the H2/Ar flow ratio of 360/140. In addition, the B-doped nc-SiCx thin films are fabricated as the window layers of a-Si thin film solar cells, and the highest conversion efficiency (8.13%) is obtained when applying the window layer with the largest optical band gap energy.
关键词： PECVD,solar cell,B-doping,thin film,silicon carbide
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Application of Solution-Processed CuSCN and AgSCN for High Efficient CdTe Solar Cells
摘要： Solution processed CuSCN and AgSCN were employed as Cu and Ag doping source in the CdTe solar cell. The effect of Cu and Ag on the CdTe device performance was investigated. It is promising to show that the CuSCN and AgSCN with similarity role to increase devices performance to power conversion efficiency to 17% and 16%, respectively. The benefit from CuSCN is that the dual role of CuSCN, one is the hole transport layer and one is Cu doping, while AgSCN with a higher resistive may play as Ag doping source with slower diffusion rate.
关键词： Solution Process,CdTe thin film solar cells,CuSCN,AgSCN
更新于2025-09-23 15:21:01
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All organics thin film flexible photodetector based on C<sub>60</sub> modified PEDOT:PSS
摘要： In organic electronics, the use of self-assembled monolayer dielectric functional groups is considered an effective surface modification strategy that can significantly improve device performance. A flexible polymer (PEDOT:PSS) photodetector on the substrate polyimide (PI) with broadband response (450 nm~980 nm) and high response (0.56 A/W) is reported, which is superimposed on the surface by small molecule (C60) thermal evaporation. In addition, the planeness of organic semiconductor and the overall performance of organic thin film photodetector can be improved significantly by using small molecule modified polymer thin film, the response of small molecule modified organic device is improved by an order of magnitude, which provides a guarantee for better application of organic thin films in circuits. Moreover, the device has strong flexibility stability performance, which can meet the requirements of flexible stability of future photoelectric devices.
关键词： organic thin film,high responsivity,broadband response,Photodetector,flexibility
更新于2025-09-23 15:21:01
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Vertically integrated, double stack oxide TFT layers for higha??resolution AMOLED backplane
摘要： We developed a novel vertically integrated, double stack oxide thin-film transistor (TFT) backplane for high-resolution organic light-emitting diode (OLED) displays. The first TFT layer is bulk-accumulation mode, and the second TFT layer is a single gate with back-channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm2/Vs and 0 ~ 1 V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 μm and a pitch of 18.6 μm was developed, exhibiting well shifted signal up to the last stage of 900 stages without output degradation, which could be used for 1360 ppi TFT backplane.
关键词： double stack structures,oxide,high definition,thin-film transistor (TFT),high resolution
更新于2025-09-23 15:21:01
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Structural and optical properties of GaAs film grown on a glass substrate using a large-grained Ge seed layer for solar cell applications
摘要： We fabricate a light absorbing GaAs layer on a glass substrate using a Ge seed layer formed by Al-induced crystallization. The GaAs layer grown at 520 °C exhibits the grain size of 50 μm and the internal quantum efficiency of 60% with a bias voltage of 1.0 V. These values are the largest among the GaAs layers grown on amorphous substrates at low temperatures (< 600 °C).
关键词： Al-induced crystallization,GaAs epitaxy,Thin film solar cell
更新于2025-09-23 15:21:01
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Carbon Nanotubes - Recent Progress || Stability and Reliability of an Electrical Device Employing Highly Crystalline Single-Walled Carbon Nanotubes as a Field Emitter
摘要： Carbon nanomaterial is drawing keen interest from researchers as well as materials scientists. Carbon nanotubes (CNTs)—and their nanoscale needle shape—offering chemical stability, thermal conductivity, and mechanical strength exhibit unique properties as a quasi-one-dimensional material. Among the expected applications, field emission electron sources appear the most promising industrially and are approaching practical utilization. However, efforts to construct a field emission (FE) cathode with single-walled carbon nanotubes (SWCNTs) have so far only helped average out a non-homogeneous electron emitter plane with large FE current fluctuations and a short emission life-time because they failed to realize a stable emission current owing to crystal defects of the carbon network in CNTs. The utilization of CNTs to obtain an effective cathode, one with a stable emission and low FE current fluctuation, relies on the ability to disperse CNTs uniformly in liquid media. In particular, highly crystalline SWCNTs hold promise to obtain good stability and reliability. The author successfully manufactured highly crystalline SWCNTs-based FE lighting elements that exhibit stable electron emission, a long emission life-time, and low power consumption for electron emitters. This FE device employing highly crystalline SWCNTs has the potential for conserving energy through low power consumption in our habitats.
关键词： wet coating process,high crystallization,field emission,single-walled carbon nanotube,scratch,thin film,planar light source,cathode luminescence
更新于2025-09-23 15:21:01
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Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
摘要： We have investigated the displacement damage (DD) effect on the electrical characteristics of ZnO thin film transistors (TFTs) based on its location of origin in the device structure. The area subjected to the maximum proton dose induces a maximum DD effect in that particular location. ZnO TFTs with two different passivation layer thicknesses were prepared to obtain maximum proton dose distribution in either the ZnO channel layer or ZnO/SiO2 interface. The devices were irradiated by a proton beam with an energy 200 keV and 1 × 1014 protons/cm2 fluence. Transport of Ions in Matter (TRIM) simulation, followed by calculation of depth distribution of the nonionizing energy loss (NIEL), illustrated different proton dose distribution profiles and NIEL profiles along the depth of the device for these two types of samples. The sample with the maximum proton dose peaks at the ZnO/SiO2 interface exhibited a significant degradation in device electrical characteristics as compared to the negligible degradation of the sample when the maximum proton dose was absorbed in the ZnO layer. Therefore, the investigation into the radiation hardness of proton-irradiated ZnO TFTs is non-trivial since the displacement damage induces drastic changes on the device characteristics based on the damage location.
关键词： ZnO,NIEL,Displacement damage,Thin-film transistors,Proton radiation effects
更新于2025-09-23 15:21:01
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Pulsed-laser epitaxy of metallic delafossite PdCrO <sub/>2</sub> films
摘要： Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of delafossites may enable not only the tuning of the basic physical properties beyond what bulk materials can exhibit, but also the development of novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinity, the direct growth of epitaxial PdCrO2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities with the substrate and volatile nature of the PdO sublayer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO2 buffer layers before PdCrO2 films were grown. Unlike PdCrO2, CuCrO2 films were readily grown with a relatively wide growth window. Only a monolayer thick buffer layer was sufficient to grow the correct PdCrO2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness. This work provides key insights into advancing the epitaxial growth of the broader class of metallic delafossites for both studying the basic physical properties and developing new spintronic and computing devices.
关键词： delafossite,pulsed laser epitaxy,thin film growth,antiferromagnetic transition,PdCrO2
更新于2025-09-23 15:21:01