研究目的
Investigating the deposition of boron-doped nanocrystalline silicon carbide thin films using H2-Ar mixed dilution for application in thin film solar cells to achieve both wide optical band gap and high conductivity.
研究成果
By applying H2-Ar mixed dilution, highly conductive B-doped nc-SiCx thin film with wide optical band gap can be fabricated and exhibit remarkable effect on promoting conversion efficiency. The best performance is achieved for the device with the window layer prepared at H2 flow=360 sccm.
研究不足
The high annealing temperature (≥800℃) is unfavorable for the device manufacture. The optical band gap energy of Si nanocrystals is unable to be extracted by Tauc methods as the Tauc curves only represent the overall optical band gap of thin film.
1：Experimental Design and Method Selection:
The B-doped nc-SiCx thin films were deposited by PECVD method using a capacitively-coupled parallel plate
2：56 MHz system. Sample Selection and Data Sources:
Glass and c-Si wafer were applied as substrate and pre-cleaned by acetone, ethanol and deionized water in subsequence prior to deposition.
3：List of Experimental Equipment and Materials:
Pure silane (SiH4) and methane (CH4) were introduced into chamber as precursors with the same flow of 5 sccm. 2% hydrogen-diluted diborane (B2H6) was used as doping resource gas.
4：Experimental Procedures and Operational Workflow:
The RF power and reaction pressure were respectively fixed at 100 W and 400 Pa for all the samples.
5：Data Analysis Methods:
Various characterizations including TEM, Raman, XPS, UV/VIS spectroscopy, and Hall test were carried out for detailedly studying the influence of the H2-Ar mixed dilution on the film deposition.
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