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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • thin-film transistors
  • N2O plasma treatment.
  • amorphous InGaZnO
  • gate-bias stress
  • stability
应用领域
  • Electronic Science and Technology
机构单位
  • Peking University
567 条数据
?? 中文（中国） ▾

  • 30.1: Transparent Basic Logic Circuits with ITO-Stabilized ZnO Thin Film Transistors

    摘要： Transparent basic logic circuits integrated by indium tin oxide(ITO)-stabilized ZnO thin film transistors(TFTs) are successfully fabricated on glass substrate. ITO-stabilized ZnO thin films with hybrid-phase microstructure are employed as active layers in the bottom-contact top-gated TFTs. We fabricate 13-stages ring oscillator (RO) with diode-load and pseudo-CMOS inverter respectively in order to tell the difference between those two schemes. The pseudo-CMOS RO exhibits 7V voltage swing and 42kHz oscillation frequency while the diode-load RO exhibiting 3.3V and 71kHz under the same supply voltage of 20V. Meanwhile, basic digital circuits like NOR gates and D flip flops with pseudo-CMOS scheme are also fabricated and they are logically correct. Those logic gates exhibit a typical high level of 4.3V, low level of 200mV and maximum operating frequency of nearly 10kHz under the 10V supply voltage. The transmittance of the chip is 80% to 90% in a 380-nm to 800-nm wavelength.

    关键词： Transparent Basic Logic Circuits,ITO-Stabilized ZnO,Thin Film Transistor(TFT)

    更新于2025-09-09 09:28:46

  • P-1.10: Solution-processed metal oxide semiconductors fabricated with oxygen radical assisting perchlorate aqueous precursors through a new low-temperature reaction route

    摘要： In this report, an innovative and simple chemical route for fabricating MO semiconducting low temperature without any fuel additives or special annealing methods is demonstrated. Different from combustion method, the precursor that we compound contains only two kinds of oxidizers. The precursor, which consisted of perchlorate, nitrate, and DI water, is easily converted into In2O3 at an annealing temperature of 250 °C due to oxygen radical assisting decomposition and large amount of heat generation. It is found that perchlorate salt can decompose and form oxide film with high quality at lower temperature when assisted by nitrate salt. The optimized In2O3-TFT fabricated at 250°C via this precursor exhibits a saturate mobility of 14.5 cm2V-1s-1. Furthermore, this approach has been expanded to fabrication films at 350°C and attained improved performance.

    关键词： metal oxide semiconductor,perchlorate salt,solution-process,oxygen radical,Thin-film transistor

    更新于2025-09-09 09:28:46

  • Empirical expressions for the spectral dependence of the refractive index for the case of thin-film silicon and some of its common alloys

    摘要： We aim to model the spectral dependence of the refractive index associated with thin-film silicon, and some of its common alloys, using a series of elementary polynomial fits. For the purposes of this particular analysis, experimental data sets for the refractive index as a function of the photon energy corresponding to samples of thin-film silicon, and its alloy with germanium and carbon, prepared through evaporation, plasma enhanced chemical vapor deposition, and dc sputtering, are considered, this range of results providing a reasonably representative sampling over the thin-film silicon genome. The results of this analysis, i.e., the polynomials that arise from these fits, are explicitly tabulated. We believe that such models will offer the thin-film silicon community a number of advantages, including the ease with which such a result can be replicated, manipulated, and employed by fellow thin-film silicon researchers in their analyzes of this material system.

    关键词： spectral dependence,alloys,refractive index,polynomial fits,thin-film silicon

    更新于2025-09-09 09:28:46

  • Phase diagram and physical properties of (110) oriented Ba(Zr0.08Ti0.92)O3 thin film

    摘要： A phenomenological Landau-Devonshire theory is applied to construct the thermodynamic potential of (110) oriented Ba(Zr0.08Ti0.92)O3 thin film and investigate the phase transition, ferroelectric, dielectric and piezoelectric properties. Three ferroelectric phases, such as tetragonal a1 phase, orthorhombic a2c and triclinic γ phase are stable in “misfit strain-temperature” phase diagram. Two triple points are found in the phase diagram and 90° polarization switching can occur directly between tetragonal a1 phase and orthorhombic a2c phase. Complicated phase transitions are induced by the electric field in triclinic γ phase due to the nonlinear coupling terms appeared in the thermodynamic potential. The longitudinal piezoelectric coefficient of (110) oriented Ba (Zr0.08Ti0.92)O3 thin film is smaller than that of (001) oriented film. Moreover, negative longitudinal piezoelectric coefficient can be obtained in triclinic γ phase.

    关键词： A. Ferroelectric thin film,D. Piezoelectric property,D. Phase transition

    更新于2025-09-09 09:28:46

  • Influence of the Iodide to Bromide Ratio on Crystallographic and Optoelectronic Properties of Rubidium Antimony Halide Perovskites

    摘要： Rubidium antimony halides are a promising low toxic alternative to organo-lead halide perovskites as photovoltaic material. In this contribution we systematically investigate the influence of varying the bromide to iodide ratio on the structural, optical and photovoltaic properties of Rb3Sb2Br9-xIx (x = 0 – 9). Single crystal data reveal that all compounds crystallize in a 2D-layered monoclinic crystal structure. Sequential substitution of iodide with the smaller bromide does not change the crystal system, however, increasing the bromide content results in a shrinkage of the unit cell as well as in a blue shift of the absorption onset, increasing the band gap from 2.02 eV to 2.46 eV. Whereas the photovoltaic properties of bromide rich compounds are limited due to a preferential orientation of the layered structure parallel to the substrate, which is detrimental to charge transport, solar cells with Rb3Sb2I9 as absorber material display power conversion efficiencies of 1.37%. Moreover, the devices exhibit low hysteresis properties and are stable for more than 150 days stored under inert atmosphere.

    关键词： single crystal,thin film,antimony perovskites,photoluminescence,lead-free perovskite,solar cells,structural characterization

    更新于2025-09-09 09:28:46

  • A Dual-functional Superoxide Precursor to Improve the Electrical Characteristics of Oxide Thin Film Transistors

    摘要： We investigated a method to simultaneously improve the mobility and reliability of solution-processed zinc tin oxide thin film transistors (ZTO TFTs) using a dual-functional potassium superoxide precursor. Potassium cations in the potassium superoxide (KO2) precursor act as carrier suppliers in the ZTO thin film to improve the carrier (electron) concentration, which allows the potassium-doped ZTO TFT to exhibit high mobility. The anions in the precursor exist as superoxide radicals that reduce oxygen vacancies during the formation of thin oxide film. Consequently, the KO2-treated ZTO TFTs exhibited improved mobility and reliability compared with pristine ZTO TFTs, with an increase in field effect mobility from 5.57 to 8.74 cm2/Vs and a decrease in the threshold voltage shift from 7.18 to 3.85 V, after a positive bias temperature stress test conducted over 5000 sec.

    关键词： oxide semiconductor,superoxide radical,solution process,Dual-functional precursor,thin film transistor

    更新于2025-09-09 09:28:46

  • Metal-insulator transition in V <sub/>2</sub> O <sub/>3</sub> thin film caused by tip-induced strain

    摘要： We have demonstrated pressure-induced transition in a c-axis oriented vanadium sesquioxide (V2O3) thin film from a strongly correlated metal to a Mott insulator in a submicrometric region by inducing a local stress using contact atomic force microscopy. To have an access to a pressure range of sub-gigapascal, a tip with a large radius of 335 nm was prepared by chemical vapour deposition of platinum onto a commercial tip with a focused ion beam (FIB). The FIB-modified tip gives a good electrical contact at low working pressures (0.25–0.4 GPa) allowing unambiguously to evidence reversible metal-insulator transition in a pulsed laser-deposited V2O3 thin film by means of local investigations of current-voltage characteristics. A finite element method has confirmed that the diminution of the c/a ratio under this tip pressure explains the observed phase transition of the electron density of states in the film.

    关键词： tip-induced strain,Mott insulator,metal-insulator transition,V2O3 thin film,atomic force microscopy

    更新于2025-09-09 09:28:46

  • A New Process to Synthesize CrSe Thin Films with Nanosize by CBD Method

    摘要： In this study, CrSe thin films were produced by using a new variation of chemical bath deposition (CBD) on glass substrates at different pH values, namely pH: 8, 9, 10 and 11. Some optical properties of these films including T% (transmittance), R% (reflectance), n (refractive index), k (extinction coefficient) and ?1 and ?2 (real and imaginary parts of dielectric constants) for pH: 8, 9, 10 and 11 were found as (82.89, 80.00, 78.54, 79.05%), (3.76, 5.32, 4.08, 5.44), (1.48, 1.59, 1.48, 1.60), (0.055, 0.079, 0.127, 0.116) and (1.33, 1.47, 1.21,1.52) and (0.87, 0.33, 0.12, 0.14) at 550 nm wavelength. Surface morphologies of thin films were examined by SEM. Film thicknesses were measured to be 34, 44, 50 and 104 nm by AFM, and the optical band gap (Egap) were calculated as 3.14; 3.72; 3.71 and 3.74 eV for pH: 8, 9, 10 and 11, respectively. Optical conductivity variation of CrSe thin films were calculated as a function of frequency for pH: 8, 9, 10 and 11, respectively. The usage areas of these films in optoelectronic applications were discussed.

    关键词： Thin Film,CBD Method,Optical density,CrSe,Optical conductivity

    更新于2025-09-09 09:28:46

  • Extraction of Contact Resistance and DC Modelling in Metal Oxide TFTs

    摘要： Based on the device physics, a simple and fast method of extracting contact resistance in metal oxide thin-film transistors (MOTFTs) is proposed through the I-V characteristics. This method divides the channel into two parts: the contact channel and the intrinsic channel, and assumes the electrons injected into the active layer at the source side are completed in the line injection. Using the I-V characteristics, the contact voltage can be obtained, and then the contact resistance can be extracted. The results indicate that contact resistance in MOTFTs depends on Vg, Vd, and L. Applying the extraction results, a DC drain current model considering contact resistance is proposed. Using this model, we can accurately describe the measurements of MOTFTs with channel lengths scaling from 50 μm to 10 μm. Through the extensive comparisons between the model results and the measurements, the validity of the method is strongly supported. This extraction method uses non-numerical iteration, which is simple, fast and accurate.

    关键词： contact voltage,Metal oxide thin-film transistors,contact resistance,I-V characteristics.,DC model

    更新于2025-09-09 09:28:46

  • [IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - Fabrication of P-Type Microcrystalline Silicon Thin Film by Magnetron Sputtering and Copper Induced Crystallization

    摘要： P-type micro-crystalline Silicon thin film was realized by magnetron sputtering and copper-induced crystallization for photovoltaic applications. Firstly, amorphous Silicon film was deposited by direct current magnetron sputtering from highly-doped single crystalline Si target. Then it was crystallized by copper-induced crystallization in nitrogen atmosphere with the annealing temperatures ranges from 450 to 950 °C. The micro-crystalline Silicon thin film was characterized by X-ray diffraction and Ramon spectrometry. Its grain size and crystallization ratio were approximately 20 nm and 93%, respectively. Finally, a PN junction solar cell was fabricated by creating the P-type microcrystalline Si thin film (as the P region) on a highly-doped N-type Silicon wafer (as N region). The fabricated device showed the good rectification characteristics of a typical diode where under dark condition it represented the rectification ratio of 150 and reverse saturation current density of 9 μA.cm-2. The fabricated solar cell showed a significant photovoltaic effect under AM 1.5G illumination conditions. The highest photovoltaic conversion efficiency of 2.1%, with the open-circuit voltage of 416 mV and short-circuit current density of 13.3 mA/cm2, was measured from the sample fabricated by the optimal process.

    关键词： magnetron sputtering,microcrystalline silicon thin film,copper induced crystallization,characterization

    更新于2025-09-09 09:28:46