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Influence of RbF post deposition treatment on heterojunction and grain boundaries in high efficient (21.1%) Cu(In,Ga)Se2 solar cells
摘要： Post deposition treatments (PDT) by alkali fluorides applied to chalcopyrite-based absorbers have produced record efficiencies in thin-film solar devices in the past few years and recently the efficiency of 22.6 % was achieved with Cu(In,Ga)Se2 (CIGS) using rubidium fluoride (RbF) PDT. However, the effects of RbF-PDT towards changes in its interfacial and grain boundary (GB) properties are still not fully understood. In this work, cells with efficiency higher than 21% are investigated by combination of atom probe tomography (APT) and transmission electron microscopy (TEM) to show how changes in GB and interface chemistry may facilitate high efficiencies. APT studies, carried out at the interface between CIGS absorber and solution-grown CdS buffer layer, show In enrichment and Cu depletion along with traces of Rb. Our APT studies reveal higher amounts of Rb (1.5 at. %) and lower amounts of Na and K (<0.5 at. %) at GBs as compared with previous studies (on non-PDT samples) thus indicating substitution of Na and K by Rb. However, concentration of all alkali elements inside the grain bulk is below detection limit of APT. The concentration of Rb at the GBs in CIGS is measured depth-dependent using both APT and TEM, which consistently shows the increase in Rb towards the Mo back contact. In addition, a pronounced Cu depletion is observed at the GBs which might enhance hole-barrier properties of the GBs, thus improving charge carrier collection and hence the overall efficiency of the device. Thus, understanding effects of RbF-PDT at the atomic scale provides new insights concerning the further improvement of CIGS absorber and interfaces.
关键词： Cu(In,Ga)Se2,Thin-film solar cell,heterojunction,atom probe tomography,post deposition treatments,transmission electron microscopy
更新于2025-11-21 11:20:48
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Evaluation of solar factor using spectral analysis for CdTe photovoltaic glazing
摘要： Solar and luminous light transmission control using Cadmium Telluride (CdTe) based PV glazing systems (15cm × 15 cm × 0.6 cm) were evaluated in this work. Indoor spectral characterisation showed that average solar transmission for investigated three different CdTe glazing systems were 5.77% (CdTe1), 9.54% (CdTe2) and 12.34% (CdTe3). Spectral behaviour of reflections in the range of solar and visible wavelengths was similar for these three different transparent CdTe glazing. Near infrared (NIR) reflection was higher compared to luminous reflection after 1500 nm for all three glazing systems. Solar factor (SF) for CdTe1, CdTe2 and CdTe3 glazing were 0.23, 0.28, 0.26. CdTe3 is the best candidate for glazing application as it has 113% higher luminous transmission while SF only increases by 21% compared to CdTe1.
关键词： transmission,reflection,solar factor,glazing,Cadmium Telluride (CdTe),thin film solar cell
更新于2025-10-22 19:40:53
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Color tuning in Cu(In,Ga)Se <sub/>2</sub> thin-film solar cells by controlling optical interference in transparent front layers
摘要： Aesthetic factors such as colorization in harmony with the surrounding environment are becoming important in the field of applied photovoltaics. Therefore, there exists a need to realize colors in solar cells, with minimum additional cost and efficiency loss. We tuned the color of Cu(In,Ga)Se2 thin-film solar cells by controlling the optical interference between the sputtered Zn(O,S) buffer layer and indium tin oxide (ITO) transparent electrode layer, which are intrinsic components of the solar cell device, without any additional process and/or material. The nontoxic Cd-free buffer layer was prepared in consideration of the environmental factor. In order to minimize the degradation of the photovoltaic performance of the solar cell, the experiment was conducted within the thickness (optical path length) of the Zn(O,S) and ITO transparent front layers, which affected the solar cell performance more optically and less electrically. As the antireflection coating thickness increased, the solar cell was calculated to have a wider color range, lower luminosity, and lower JSC loss. Relatively even efficiencies were obtained with a wide color range.
关键词： color,transparent front layer,optical interference,CIGS thin-film solar cell,nontoxic Cd-free buffer
更新于2025-09-23 15:21:01
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Numerical analysis of earth-abundant Cu2ZnSn(SxSe1-x)4 solar cells based on Spectroscopic Ellipsometry results by using SCAPS-1D
摘要： Mixed chalcogenide CZTSSe with earth abundant elements, inexpensive, environmental-friendly and impressive photovoltaic performance is a promising absorber material for kesterite thin film solar cells of third generation. In this work, a numerical simulation of p-CZTSSe/n-CdS heterojunction solar cells have been presented using one dimensional Solar Capacitance Simulator. The influence of composition, absorber thickness, defect density and working temperature on Voc, Jsc, FF and power conversion efficiency has been investigated. The optimized cell shows 23.16% efficiency with a Voc ~ 0.724 V corresponding to 40% of the ratio.
关键词： Composition and Spectroscopic Ellipsometry,Absorption coefficient,CZTSSe,Thin film solar cell,Third generation,SCAPS,Efficiency
更新于2025-09-23 15:21:01
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Structural and optical properties of GaAs film grown on a glass substrate using a large-grained Ge seed layer for solar cell applications
摘要： We fabricate a light absorbing GaAs layer on a glass substrate using a Ge seed layer formed by Al-induced crystallization. The GaAs layer grown at 520 °C exhibits the grain size of 50 μm and the internal quantum efficiency of 60% with a bias voltage of 1.0 V. These values are the largest among the GaAs layers grown on amorphous substrates at low temperatures (< 600 °C).
关键词： Al-induced crystallization,GaAs epitaxy,Thin film solar cell
更新于2025-09-23 15:21:01
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Lithium-Doping Effects in Cu(In,Ga)Se2 Thin-Film and Photovoltaic Properties
摘要： The beneficial effects of heavy alkali-metals such as K, Rb, and Cs in enhancing Cu(In,Ga)Se2 (CIGS) photovoltaic efficiencies are widely known, though the detailed mechanism is still open for discussion. In the present work, the effects of the lightest alkali-metal, Li, on CIGS thin-film and device properties are focused upon and compared to the effects of heavy alkali-metals. To date, the beneficial effects of elemental Li on Cu2ZnSnS4 (CZTS) photovoltaic devices in enhancing efficiencies have been reported in the literature. On the other hand, it is shown in the present work that the beneficial effects of Li on CIGS are not so significant. In contrast to the effects of Na or Rb in enhancing CIGS (112) growth orientation, Li was revealed not to affect CIGS growth orientation. The most distinctive feature observed between Li and other alkali-metals was the elemental depth profile in CIGS films. Namely, Na and heavier alkali-metals show a concentration peak near the surface region (relatively Cu-poor region) of CIGS films, whereas elemental Li showed no such trend, suggesting that Li has no significant effect on CIGS surface modification. Nonetheless, Li was found to have some effect in enhancing the PL peak intensity and photovoltaic performance of CIGS, though the effect is relatively small in comparison to that obtained with other alkali-metals.
关键词： CIGS,lithium,thin-film solar cell,rubidium,chalcogenide,chalcopyrite,alkali-metal
更新于2025-09-23 15:21:01
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Transparent Electrode and Buffer Layer Combination for Reducing Carrier Recombination and Optical Loss Realizing over a 22%-Efficient Cd-Free Alkaline-Treated Cu(In,Ga)(S,Se) <sub/>2</sub> Solar Cell by the All-Dry Process
摘要： Structures of (K or Cs) alkaline-treated Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are developed, and their carrier recombination rates are scrutinized. It is determined that short-circuit current density (JSC) is enhanced (decreased optical loss), when ZnS(O,OH), (Cd,Zn)S, and Zn0.8Mg0.2O buffers with large band-gap energy (Eg) are applied as replacement of CdS buffer. The JSC is further increased, more reducing the optical loss, when Zn0.9Mg0.1O:B is used as transparent conductive oxide (TCO) with larger Eg and lower free carrier absorption than those of ZnO:Al. Furthermore, all carrier recombination rates throughout the devices with K or Cs treatment, especially at buffer/absorber interface and in quasi neutral region, are reduced, thereby reducing open-circuit voltage deficit (VOC,def), well consistent with the simulated ones. The carrier recombination rate at the buffer/absorber interface is further decreased, when the CdS and (Cd,Zn)S buffers, deposited by chemical bath deposition, are applied, leading to the more reduction of the VOC,def and the high conversion efficiency (η) of about 21%. Under the trade-off between VOC,def and optical loss, the highest η of 22.6% is attained with the lowest power loss (or the highest VOC × JSC) in the Cs-treated Cd-free CIGSSe solar cell with an optimized structure of glass/Mo/CIGSSe/Zn0.8Mg0.2O/Zn0.9Mg0.1O:B, fabricated by all-dry process, where the Zn0.8Mg0.2O buffer is prepared by the sputtering method. This occurs because the JSC is the highest attributable to the larger Eg of Zn0.8Mg0.2O buffer than those of the CdS and (Cd,Zn)S.
关键词： Zn1-xMgxO,Zn1-xMgxO:Al,Cu(In,Ga)(S,Se)2 thin-film solar cell,carrier recombination rates,Zn1-xMgxO:B,(Cd,Zn)S
更新于2025-09-23 15:19:57
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Investigation of thin-film p-BaSi<sub>2</sub>/n-CdS heterostructure towards semiconducting silicide based high efficiency solar cell
摘要： In this article, semiconducting Barium Silicide (BaSi2) absorber based Al/SnO2:F/CdS/BaSi2:B/Cu novel heterostructure thin-film solar cell (TFSC) has been studied in details. The solar cell has been numerically simulated and intensely analyzed by Solar cell Capacitance Simulator (SCAPS). Layer thickness was varied from 100-3000 nm for p+-BaSi2 absorber, 20-200 nm for both n-CdS buffer, and n+-SnO2:F window layers to optimize the device. Hitherwards, the impurities concentration for acceptor (NA) and donor (ND) ions was optimized for each layer through ample variation. The influence of single-donor and acceptor type bulk defect densities has been investigated thoroughly in p+-BaSi2 and n-CdS materials, respectively. An efficiency >30% is achievable ideally with a 2 μm thick BaSi2 absorber without incorporating defects whereas it reduces to 26.32% with only 1.2 μm thick absorber including certain amount of defects. Cell thermal stability and alteration of cell parameters were studied under cell operating temperature from 273°K to 473°K. Finally, the effect of series (Rs) and shunt (Rsh) resistances on proposed cell has been investigated meticulously. This newly designed solar cell structure proclaims the chance of fabricating a resourceful, low cost, and highly efficient TFSC near future.
关键词： SnO2:F window,Thin-film solar cell,BaSi2 absorber,SCAPS simulation,CdS buffer,Optimization
更新于2025-09-23 15:19:57
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Simulation of three types of nanoparticles on solar cell structure model
摘要： In this paper, we systemically and numerically investigate the effects of three types of Nanoparticles on the efficiency of solar cells. Finite Difference Time Domain method has been implemented to compute the absorption spectra in such proposed solar cell structure. High efficiency has been achieved by optimizing the nanoparticles layer by tuning the fraction of nanoparticles on the host layer.
关键词： Thin-film solar cell,FDTD,absorption,metal nanoparticles,reflection
更新于2025-09-23 15:19:57
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Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications
摘要： Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm?1 frequency, and a relatively wide peak was found at 265 cm?1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2? state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.
关键词： covellite,CuS/SnS absorber,CuS thin film,solar cell,RF magnetron sputtering
更新于2025-09-23 15:19:57