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[IEEE 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy (2019.9.3-2019.9.5)] 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Laser triggering of solid-state switches
摘要： A theoretical and experimental investigation has been made into the laser activated Silicon Controlled Rectifier (SCR) turn-on process. Thanks to the measurement of illumination profile of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hotspots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated configuration will be demonstrated; 8-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 45 times at low pulse repetition rate, without destroying the device.
关键词： New switching devices,Thyristors,Photovoltaic,Switching losses,Particle accelerator,Transistor,Pulsed power,Semiconductor device
更新于2025-09-16 10:30:52
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Improved turn-on characteristics of 4H SiC asymmetrical thyristor with double epitaxial n-base
摘要： A new 4H-SiC asymmetrical thyristor with double epitaxial n-base is proposed and evaluated by the two-dimensional numerical simulations. It features a high-low doping profile to modify the electric field of the thin n-base in vertical direction. The built-in electric field enhances the injected minority carriers flow through the n-base as fast as possible and reducing the combination in n-base. As a result, the current gain of the upper p-n-p transistor in 4H-SiC thyristor is promoted. Compared to the conventional thyristor, the turn-on characteristics of the new structure are improved significantly. Simulation results indicate that the turn-on time of the new thyristor is reduced from 317ns that in conventional 6500V 4H-SiC thyristor to 96ns, under the load current of 180A/cm2 and bus voltage of 800V.
关键词： Turn-on time,Thyristors,4H-SiC
更新于2025-09-04 15:30:14