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Few-layer PdSe2-based field-effect transistor for photodetector applications
摘要： We demonstrate a multilayer palladium diselenide (PdSe2) high-performance photodetector. The photodetector exhibits the photodetectivity of 0.15 ? 1010 Jones under laser illumination (λ ? 655 nm and power of 0.057 mWmm(cid:0) 2). The negative threshold voltage shift in transfer characteristics upon laser illumination is mainly attributed to the photogating effect. Systematic analysis of experimental data indicates that the photogating effect and space charge limited conduction are simultaneously involved in the conduction mechanism. We observe that the photogenerated current increases logarithmically as the light intensity increases, and it persists (~200 s) even after stopping the illumination. The slow decrease in current was attributed to the trapping of photogenerated charge carriers at the PdSe2/SiO2 interface and the defects in the structure of PdSe2. We also observe a reproducible and stable time-resolved photoresponse with respect to the incident laser power. We believe that this study can be an important source of information and can help researchers to continue to investigate methods that would allow them to maximise the potential of PdSe2 for photodetector applications.
关键词： Palladium diselenide,Photodetector,Field effect transistor,Two-dimensional materials,Photoresponse
更新于2025-09-23 15:21:01
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Opto-mechanics driven fast martensitic transition in two-dimensional materials
摘要： Diffusional phase-change materials, such as Ge-Sb-Te alloys, are used in rewritable non-volatile memory devices. But the continuous pursuit of readout/write speed and reduced energy consumption in miniaturized devices calls for optically driven, diffusionless phase change scheme in ultra-thin materials. Inspired by optical tweezers, in this work, we illustrate theoretically and computationally that a linearly polarized laser pulse with selected frequency can drive an ultrafast diffusionless martensitic phase transition of two-dimensional ferroelastic materials such as SnO and SnSe monolayers, where the unit-cell strain is tweezed as a generalized coordinate that affects the anisotropic dielectric function and electromagnetic energy density. At laser power of 2.0×1010 and 7.7×109 W/cm2, the transition potential energy barrier vanishes between two 90°-orientation variants of ferroelastic SnO and SnSe monolayer, respectively, so displacive domain switching can occur within picoseconds. The estimated adiabatic thermal limit of energy input in such optomechanical martensitic transition (OMT) is at least two orders of magnitude lower than that in Ge-Sb-Te alloy.
关键词： martensitic phase transition,ferroelasticity/ferroelectricity,two-dimensional materials,dielectric function,density functional theory,opto-mechanics
更新于2025-09-23 15:21:01
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Two-dimensional Hybrid Halide Perovskites: Principles and Prom-ises
摘要： Hybrid halide perovskites have become the “next big thing” in emerging semiconductor materials as the past decade witnessed their successful application in high-performance photovoltaics. This resurgence has seen enormous and widespread development of the three-dimensional (3D) perovskites, spearheaded by CH3NH3PbI3. The next generation of halide perovskites, however, is characterized by reduced dimensionality perovskites, emphasizing on the two-dimensional (2D) perovskite derivatives which expand as a more diverse subgroup of semiconducting hybrids that possesses even higher tunability and excellent photophysical properties. In this perspective, we begin with a historical flashback that traces back to early reports before the “perovskite fever” and we follow this original work to its fruition in the present day, where 2D halide perovskites are on the spotlight of current research, thriving on several aspects of high-performance optoelectronics. We approach the evolution of 2D halide perovskites from a structural perspective, providing a classification for the diverse structure-types of the materials, which largely dictate the unusual physical properties observed. We sort out the 2D hybrid halide perovskite based on two key components: the inorganic layers and their modification and the organic cation diversity. As these two heterogeneous components blend, either by synthetic manipulation (shuffling the organic cations or inorganic elements) or by external stimuli (temperature and pressure), the modular perovskite structure evolves to construct crystallographically defined quantum wells (QW). The complex electronic structure that arises is sensitive to the structural features that could be in turn used as a knob to control the dielectric and optical properties the QWs. We conclude this perspective with the most notable optoelectronic device achievements that have been demonstrated to date with an eye towards future material discovery and potential technological developments.
关键词： two-dimensional (2D) perovskite derivatives,optoelectronic devices,quantum wells (QW),Hybrid halide perovskites,semiconducting hybrids
更新于2025-09-23 15:21:01
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Artificial Intelligence Algorithm Enabled Industrial-Scale Graphene Characterization
摘要： No characterization method is available to quickly perform quality inspection of 2D materials produced on an industrial scale. This hinders the adoption of 2D materials for product manufacturing in many industries. Here, we report an artificial-intelligence-assisted Raman analysis to quickly probe the quality of centimeter-large graphene samples in a non-destructive manner. Chemical vapor deposition of graphene is devised in this work such that two types of samples were obtained: layer-plus-islands and layer-by-layer graphene films, at centimeter scales. Using these samples, we implemented and integrated an unsupervised learning algorithm with an automated Raman spectroscopy to precisely cluster 20,250 and 18,000 Raman spectra collected from layer-plus-islands and layer-by-layer graphene films, respectively, into five and two clusters. Each cluster represents graphene patches with different layer numbers and stacking orders. For instance, the two clusters detected in layer-by-layer graphene films represent monolayer and bilayer graphene based on their Raman fingerprints. Our intelligent Raman analysis is fully automated, with no human operation involved, is highly reliable (99.95% accuracy), and can be generalized to other 2D materials, paving the way towards industrialization of 2D materials for various applications in the future.
关键词： unsupervised learning,graphene,two-dimensional materials,Raman spectroscopy
更新于2025-09-23 15:21:01
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Revealing the Role of Gold in the Growth of Two-dimensional Molybdenum Disulfide by Surface Alloy Formation
摘要： Formation of Mo-Au surface alloy during Au-assisted chemical vapor deposition (CVD) of MoS2 was confirmed by a series of control experiments. We adapted a metalorganic chemical vapor deposition (MOCVD) system to conduct two-dimensional MoS2 growth in a controlled environment. Sequential injection of Mo and S precursors, which does not yield any MoS2 on a SiO2/Si, grows atomically thin MoS2 on Au, indicating formation of an alloy phase. Transmission electron microscopy of a cross-section of the specimen confirmed the confinement of the alloy phase near the surface only. These results show that the reaction intermediate is the surface alloy and that the role of Au in the Au-assisted CVD is formation of an atomically thin reservoir of Mo near the surface. This mechanism is clearly distinguished from that of MOCVD, which does not involve formation of any alloy phases.
关键词： Molybdenum Disulfide,Surface Alloy,Two-dimensional Material,Chemical vapor deposition,Metalorganic Chemical Vapor Deposition
更新于2025-09-23 15:21:01
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Effect of illumination on quantum lifetime in GaAs quantum wells
摘要： Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We find that the amplitude of microwave-induced resistance oscillations grows dramatically after illumination. Dingle analysis reveals that this growth reflects a substantial increase in the single-particle (quantum) lifetime, which likely originates from the light-induced redistribution of charge enhancing the screening capability of the doping layers.
关键词： quantum lifetime,microwave photoresistance,GaAs quantum wells,illumination effect,two-dimensional electron gas
更新于2025-09-23 15:21:01
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Two-dimensional transition metal dichalcogenides mediated long range surface plasmon resonance biosensors
摘要： Two-dimensional transition metal dichalcogenides (TMDCs), as promising alternative plasmon supporting materials to graphene, exhibit potential applications in sensing. Here, we propose a TMDCs-mediated long range surface plasmon resonance (LRSPR) imaging biosensor, which shows tremendous improvements in both imaging sensitivity (> ×2) and detection accuracy (> ×10) as compared to conventional surface plasmon resonance (cSPR) biosensor. It is found that the imaging sensitivity of the LRSPR biosensor can be enhanced by the integration of TMDC layers, which is di?erent from the previously reported graphene-mediated cSPR imaging sensor whose imaging sensitivity decreases with the number of graphene layers. This imaging sensitivity enhancement e?ect for the TMDCs-mediated LRSPR sensor originates from the propagating nature of the LRSPR at both interfaces of sensing medium/gold and gold/cytop layer (with matching refractive index as sensing medium). By tuning the thickness of gold ?lm and cytop layer, it is possible to achieve optimized imaging sensitivity for LRSPR sensor with any known integrated number of TMDC layers and the analyte refractive index. The proposed TMDCs-mediated LRSPR imaging sensor could provide potential applications in chemical sensing and biosensing applications.
关键词： detection accuracy,biosensor,long range surface plasmon resonance,Two-dimensional transition metal dichalcogenides,imaging sensitivity
更新于2025-09-23 15:21:01
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Determination of the two-dimensional distributions of gold nanorods by multiwavelength analytical ultracentrifugation
摘要： Properties of nanoparticles are influenced by various parameters like size, shape or composition. Comprehensive high throughput characterization techniques are urgently needed to improve synthesis, scale up to production and make way for new applications of multi-dimensional particulate systems. In this study, we present a method for measuring two-dimensional size distributions of plasmonic nanorods in a single experiment. Analytical ultracentrifuge equipped with a multiwavelength extinction detector is used to record the optical and sedimentation properties of gold nanorods simultaneously. A combination of sedimentation and extinction properties, both depending on diameter and length of the dispersed nanorods, is used to measure two-dimensional distributions of gold nanorod samples. The length, diameter, aspect ratio, volume, surface and cross-sectional distributions can be readily obtained from these results. As the technique can be extended to other non-spherical plasmonic particles and can be used for determining relative amounts of particles of different shapes it provides complete and quantitative insights into particulate systems.
关键词： gold nanorods,nanoparticles,multiwavelength extinction detector,two-dimensional size distributions,analytical ultracentrifugation
更新于2025-09-23 15:21:01
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Multifunctional two-dimensional semiconductors SnP <sub/>3</sub> : universal mechanism of layer-dependent electronic phase transition
摘要： Two-dimensional (2D) semiconductors SnP3 are predicted, from first-principles calculations, to host moderate band gaps (0.72 eV for monolayer and 1.07 eV for bilayer), ultrahigh carrier mobility (～104 cm2 V?1 s?1 for bilayer), strong absorption coefficients (～105 cm?1) and good stability. Moreover, the band gap can be modulated from an indirect character into a direct one via strain engineering. For experimental accessibility, the calculated exfoliation energies of monolayer and bilayer SnP3 are smaller than those of the common arsenic-type honeycomb structures GeP3 and InP3. More importantly, a semiconductor-to-metal transition is discovered with the layer number N > 2. We demonstrate, in remarkable contrast to the previous understandings, that such phase transition is largely driven by the correlation between lone-pair electrons of interlayer Sn and P atoms. This mechanism is universal for analogues phase transitions in arsenic-type honeycomb structures (GeP3, InP3 and SnP3).
关键词： metal-to-semiconductor transition,two-dimensional SnP3,lone-pair electrons
更新于2025-09-23 15:21:01
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Selective growth of monolayer semiconductors for diverse synaptic junctions
摘要： The information computation through synapse networks in the brain plays a vital role for cognitive behaviors such as image/video recognition, self-learning, and decision-making. Achieving proper synaptic networks by conventional semiconductor and memristive devices has encountered critical issues such as the spatial density requiring a number of transistors for one synapse, reliable filament formation in memristors, or emulating diverse excitatory and inhibitory synaptic plasticity with two-terminal device geometry. Here, we report selective growth of variously doped MoS2 with controllable conductance plasticity, which can be used for emulating diverse synaptic junctions. The conductance plasticity in the monolayer MoS2 was found to originate from resistive-heating near the junctions with electrodes in the two-terminal device geometry and the carrier-concentration-dependent metal-insulator transition in the MoS2 channel. A spatiotemporal synaptic summation is demonstrated where the firing of a proper postsynaptic membrane potential can be designed for cognitive processes. Compared with previously reported three terminal synaptic devices with atomically thin materials, our two-terminal devices with flexible synaptic strengths have advantages for integrating three-dimensional neuronal networks. This provides a new insight on two-dimensional materials as a promising arena for integrated synaptic functionalities in artificial neural networks.
关键词： chemical vapor deposition,metal-insulator transition,defects engineering,two dimensional materials,synaptic junction
更新于2025-09-23 15:21:01