Turning electrical switching behaviors in WO <sub/><i>x</i> </sub> thin films by thickness

摘要： The tunability of electrical switching behaviors in WOx thin films were investigated in this paper. Electrical responses of the WOx films were observed to be highly sensitive to the film thickness. As the film thickness increases from 50 to 100 nm, the switching behavior changes from complementary resistive switching (CRS) to threshold switching (TS). A defect-related dynamic evolution of filament is responsible for the switching behavior. Such a controllable electrical switching can well broaden the application of the WOx thin film.