- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
TFET performance optimization using gate work function engineering
摘要： This work presents main electrical characteristics improvement in a nanoscale tunnel ?eld-effect transistor (TFET) with 50 nm channel length, applying work function engineering techniques. Three different metal gate materials with dedicated work functions are utilized to optimize the TFET performance. By gate work function and length optimization, the main parameters of Ion = 5910-5 A/lm, Ioff = 2.5 9 10-15 A/lm, Iamb = 3910-7 A/lm, and subthreshold swing = 51.01 mV/decade are obtained in accordance with tunneling barrier shape at source/channel and drain/channel junctions. The work function engineering techniques, presented in the current work, results in 1.22 times improvement in ION and 0.99 times improvement in IOFF.
关键词： Planar triple metal gate,TFET,Work function engineering
更新于2025-09-23 15:23:52
-
Interfacial Band Engineering of MoS <sub/>2</sub> /Gold Interfaces Using Pyrimidine-Containing Self-Assembled Monolayers: Toward Contact-Resistance-Free Bottom-Contacts
摘要： Bottom-contact architectures with common electrode materials such as gold are crucial for the integration of 2D semiconductors into existing device concepts. The high contact resistance to gold—especially for bottom contacts—is, however, a general problem in 2D semiconductor thin-film transistors. Pyrimidine-containing self-assembled monolayers on gold electrodes are investigated for tuning the electrode work functions in order to minimize that contact resistance. Their frequently ignored asymmetric and bias-dependent nature is recorded by Kelvin probe force microscopy through a direct mapping of the potential drop across the channel during device operation. A reduction of the contact resistances exceeding two orders of magnitude is achieved via a suitable self-assembled monolayer, which vastly improves the overall device performance.
关键词： work-function engineering,MoS2,thin-film transistors,self-assembled monolayers,Schottky barrier
更新于2025-09-23 15:19:57
-
Self-Assembled Monolayers with Embedded Dipole Moments for Work Function Engineering of Oxide Substrates
摘要： Self-assembled monolayers (SAMs) are frequently used for work function (WF) engineering of different materials. For this, typically dipolar groups are attached to the molecule terminus at the SAM?ambient interface, which also influences its chemistry. WF engineering and interface chemistry can, however, be decoupled from one another using embedded dipolar groups, as has been demonstrated before for thiolate SAMs on metals. Herein, we extend this concept to oxide substrates. For this, a series of biphenyl-based molecules with a phosphonic acid (PA) anchoring group was synthesized, with one of the nonpolar phenyl units exchanged for a polar pyrimidine moiety, the dipole moment of which is oriented either toward (“down”) or away (“up”) to/from the PA group and, consequently, to/from the substrate. SAMs of these molecules formed on indium tin oxide (ITO), a frequently used and application-relevant oxide substrate, feature a uniform molecular configuration, dense molecular packing, and an upright molecular orientation. These SAMs exhibit pronounced electrostatic effects associated with the embedded dipolar groups, viz. shifts of the characteristic peaks in the C 1s X-ray photoelectron spectra and WF variations. The latter values were found to be 3.9, 4.85, and 4.4 eV for the up, down, and nonpolar reference SAM-engineered ITO, respectively. Consequently, these SAMs can serve as a powerful tool to monitor WF engineering effects in a variety of device assembles, decoupling these effects from the interface chemistry. The comparably low WF value for the up SAM is particularly important since it extends a rather limited variety of SAMs capable of lowering the WF of ITO.
关键词： Phosphonic acid,Self-assembled monolayers,Work function engineering,Embedded dipolar groups,Indium tin oxide,Oxide substrates
更新于2025-09-19 17:13:59