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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Investigations on electrical properties and correlations to electron and X-ray energies of pyroelectric LiTaO<inf>3</inf> and LiNbO<inf>3</inf>
摘要： The electrical properties of pyroelectric Lithium Tantalate (LiTaO3) and Lithium Niobate (LiNbO3) were investigated and compared to accessible X-ray energies by using the pyroelectric effect to generate X-rays. The capacitances of different crystals of varying sizes were measured and the resulting permittivities were calculated. A vacuum setup enabled a correlation to the maximum X-ray energies at a variable pressure. The presented results provide an overview of fundamental material properties and the effect on the generated difference of potential.
关键词： Lithium Niobate,pyroelectric crystal,vacuum electron source,X-ray spectrum,permittivity,X-ray energy,electron acceleration,electron emission,capacitance,Lithium Tantalate
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Self-focusing of electrons emitted by rectangular pyroelectric crystals: A study on geometrical conditions for optimized X-ray intensities
摘要： Pyroelectric crystals such as LiTaO3 or LiNbO3 offer the opportunity to produce X-rays with high energy and intensity. These pyroelectric X-ray sources may be used in XRF applications due to particular advantages. This report deals with systematic studies on the behavior of these crystals enabling an optimization of X-ray intensity. Furthermore, the focusing of electrons emitted by rectangular pyroelectric crystals has been studied.
关键词： Lithium Niobate,pyroelectric crystal,vacuum electron source,X-ray intensity,X-ray spectrum,focusing,electron acceleration,electron emission,Lithium Tantalate
更新于2025-09-23 15:21:21
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Effect of DFT methods on electronic structure and <i>K</i> -absorption spectra of InPS <sub/>4</sub> : detailed studies of the optical, thermoelectric and elastic properties
摘要： The effect of exchange-correlation potential on InPS4 electronic structure was studied by applying GGA, GGA+U, mBJ, and mBJ+U potentials in the Kohn–Sham framework. The use of mBJ+U in full potential APW+lo method results in reliable K-absorption spectrum, which consists of nearly full experimental peaks of right intensity. The remarkable discrepancy between 1e w^( ) and 1e w?( ) occurs at 0 eV, 4 eV, 6 eV, and 9.5 eV, indicating the strong anisotropic optical properties of InPS4 at these energy levels. At 4 eV, the optical absorption of InPS4 has high order of 105cm?1 magnitude for wide energy range, at least within 4–20 eV. The figure of merit ZT achieves its highest value of about 0.8–1. InPS4 is a p-type semiconductor for chemical potential μ ranging from 0 eV to about 1.6 eV, but it is an n-type semiconductor for μ of about 1.6–2.7 eV. The Poisson’s ratio is equal to 0.26 and B/G@1.75. Indium thiophosphate InPS4 possesses rather low deformation resistance with the Young and shear moduli of 38.47 GPa and 15.27 GPa, respectively.
关键词： thermoelectric properties,elastic properties,optical properties,ab initio calculations,x-ray spectrum
更新于2025-09-23 15:19:57