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Photodegradation of thiophene over ZrO2–SiO2 nanoparticles: impact of copper decoration on their photocatalytic activity
摘要： A sol–gel technique was useful for the synthesis of zirconia–silica nanoparticles. Metallic copper has decorated zirconia–silica nanoparticles via photo-assisted deposition method, decorated copper mass percent was varied from 0.5, 1.0, 1.5, and 2.0 wt%. XRD results confirm that decoration of zirconia–silica nanoparticles by copper did not alert XRD pattern of zirconia–silica nanoparticles and there are no peaks for copper or copper oxide, due to high dispersion of copper above a surface of zirconia–silica nanoparticles. The decoration of zirconia–silica nanoparticles by copper was reduced band gap energy of zirconia–silica nanoparticles from 3.20 to 2.35 eV with 1.5 wt% Cu decoration. Photocatalytic oxidation of thiophene in presence of visible light was selected to measure the impact of metallic copper on photocatalytic activity of zirconia–silica nanoparticles. 1.5 wt% Cu-decorated zirconia–silica nanoparticles can degrade 100% of thiophene within 90 min.
关键词： ZrO2–SiO2,Sol–gel,Thiophene degradation,Cu decoration,Enhanced photocatalysis,Visible light
更新于2025-11-14 15:26:12
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[IEEE 2019 IEEE 28th International Symposium on Industrial Electronics (ISIE) - Vancouver, BC, Canada (2019.6.12-2019.6.14)] 2019 IEEE 28th International Symposium on Industrial Electronics (ISIE) - Digital Holography for Industrial Applications
摘要： Metal–insulator–metal (MIM) capacitors with full atomic-layer-deposition Al2O3/ZrO2/SiO2/ZrO2/Al2O3 stacks were explored for the first time. As the incorporated SiO2 film thickness increased from 0 to 3 nm, the quadratic and linear voltage coefficients of capacitance (α and β) of the MIM capacitors reduced significantly from positive values to negative ones. For the stack with 3-nm SiO2 film, a capacitance density of 7.40 fF/μm2, α of ?121 ppm/V2, and β of ?116 ppm/V were achieved, together with very low leakage current densities of 3.08 × 10?8 A/cm2 at 5 V at room temperature (RT) and 5.89 × 10?8 A/cm2 at 3.3 V at 125 °C, high breakdown field of 6.05 MV/cm, and high operating voltage of 6.3 V for a 10-year lifetime at RT. Thus, this type of stacks is a very promising candidate for next generation radio frequency and analog/mixed-signal integrated circuits.
关键词： metal-insulator-metal,Al2O3/ZrO2/SiO2/ZrO2/Al2O3,Atomic-layer-deposition,voltage coefficients of capacitance
更新于2025-09-19 17:13:59