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Rapid crystallization of electrohydrodynamically atomized ZrO2 thin films by laser annealing
摘要： This paper aims to provide a simple and rapid fabricating method for solution-based ZrO2 thin films. The ZrO2 thin film was firstly deposited on a 316L stainless steel substrate by electrohydrodynamic atomization. Then the crystallization process was carried out by a 4W Nd:YAG laser with a wavelength of 1064 nm. The morphology, structure and evolution of chemical bonds (Zr and O) were evaluated by transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. After laser annealing, the O 1s (O-containing ions in ZrO2) fraction rose from 22.6 % to 51.1 %, and the principal tetragonal phase composition was obtained. The large temperature gradients that derived from the photothermal effect contribute to the fast crystallization during the laser treatments. The tribological and electrochemical corrosion experiments reveal that the laser crystallized films have significantly well wear and corrosion resistance, close to those of conventionally crystallized films. This fabricating method is simple, energy-saving and could achieve the spatially-resolved crystallization of films with a minimal temperature increase on the underlying substrates.
关键词： Laser annealing,ZrO2 thin films,Electrohydrodynamic atomization,Tribological and corrosion properties
更新于2025-09-16 10:30:52
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Influence of 120 MeV S9+ ion irradiation on structural, optical and morphological properties of zirconium oxide thin films deposited by RF sputtering
摘要： The calibrated and controlled swift heavy ions (SHI) beam irradiation generates defects which can cause modifications in various properties of the materials such as structural, optical, magnetic, morphological, and chemical etc. The passage of ion through the target material causes the nuclear energy losses (Sn) and electronic energy losses (Se). The Se dominates over Sn in SHI irradiation. In the present study, ZrO2 thin films were grown on silicon and glass substrate by using RF sputtering deposition technique. For the purpose of modifications induced by swift heavy ions, these films were irradiated by a 120 MeV S9+ ion beam of 1 pnA current, with varying ion fluences from 5E12 to 1E13 ions/cm2, using the tandem accelerator at the Inter University Accelerator Center (IUAC), New Delhi, India. The X-ray diffraction (XRD) patterns confirmed the formation of monoclinic and tetragonal phases and it was observed that XRD peak intensities increased up to the fluence of 5E12 ions/cm2 followed by opposite behavior at higher fluences. Atomic force microscope (AFM) study revealed the increased surface roughness after SHI irradiation. In addition to it, the formation of electronic transition states in optical band gap region and enhancement of absorption edge was observed from UV- visible spectroscopy (UV-Vis) results due to which direct band gap energy value decreased from those of un-irradiated samples. Photoluminescence (PL) broad emission spectra were determined using the excitation wavelength at 290 nm with the prominent peak at 415 nm which can be ascribed to Zr vacancies due to band edge emission as a result of free- exciton recombination. Rutherford backscattering spectrometry (RBS) technique was used for depth profiling and elemental composition in zirconia thin films. The expected role of electronic energy loss during ion irradiation to modify the properties of the material has been discussed.
关键词： PL,ZrO2 thin films,XRD,UV-Vis,AFM,RBS,SHI irradiation
更新于2025-09-09 09:28:46