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Rapidly self-heating shape memory polyurethane nanocomposite with boron-doped single-walled carbon nanotubes using near-infrared laser
摘要： In this study, boron-doped single-walled carbon nanotubes (SWCNTs) were synthesized by high-temperature heat treatment (1300 °C) with a boric acid precursor and SWCNTs instead of the conventional chemical doping process. Then, these boron-doped single-walled carbon nanotubes (B-SWCNTs) were added to polyurethane to prepare polyurethane nanocomposites having excellent thermal and mechanical properties. Changes in properties that occurred due to structural changes inside the composite were investigated as the added amount of nanofiller was increased. In particular, a near-infrared (NIR) laser (808 nm) was directly irradiated on the nanocomposite film to induce photothermal properties on the surface of the B-SWCNTs. In the case of the PU nanocomposite film with a filler content of 3 wt%, a self-heating film material that rapidly heated to 250 °C within 10 s was developed. The newly developed material can be applied to electronic devices and products as a heat-generating coating material, de-icing of airplane, a heat sink, for bio-sensing, etc., using a moulding process.
关键词： boron-doping,photothermal,thermoelectrics,carbon nanotube,polyurethane
更新于2025-11-25 10:30:42
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Boron-doped diamond with improved oxidation resistance
摘要： The oxidation behavior of pure and 0.2 wt% B-containing diamond powders was investigated by thermal analysis, SEM analysis, and Raman spectroscopy of partially oxidized diamonds. Boron-doped diamond exhibited a much higher oxidation stability than that of pure diamond. The maximum oxidation rate shifted from 773 °C for the pure diamond to 1118 °C for the B-doped diamond. SEM analysis of the surface of the partially oxidized diamonds revealed that the low boron content (0.2%) was sufficient for the formation of a protective B2O3 surface layer in the regions in which active oxidation took place. This layer was most probably the reason for the improved oxidation resistance.
关键词： Diamond,Boron-doped,Oxidation resistance
更新于2025-11-21 11:20:48
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Enhanced surface plasmon resonance (SPR) signals based on immobilization of core-shell nanoparticles incorporated boron nitride nanosheets: Development of molecularly imprinted SPR nanosensor for anticancer drug, etoposide
摘要： An effective SPR nanosensor based on core-shell nanoparticles (Ag@AuNPs) incorporated hexagonal boron nitride (HBN) nanosheets and molecularly imprinted polymer (MIP) was presented for etoposide (ETO) detection. Scanning electron microscope (SEM), transmission electron microscope (TEM), x-ray diffraction (XRD) method, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), fourier transform infrared (FTIR) spectroscopy and atomic force microscopy (AFM) methods were utilized for all characterizations of nanomaterials and polymer surfaces. ETO imprinted SPR nanosensor based on Ag@AuNPs-HBN nanocomposite was developed in the presence of poly(2-hydroxyethyl methacrylate-methacryloylamidoglutamic acid) [p(HEMA-MAGA)]. The results of the study have revealed that 0.001 - 1.00 ng mL-1 (1.70×10-12 - 1.70×10-9 M) and 0.00025 ng mL-1 (4.25×10-13 M) were found as the linearity range and the detection limit (LOD). Furthermore, the prepared SPR nanosensor was examined in terms of stability, repeatability and selectivity. Finally, the imprinted SPR nanosensor was applied to the urine samples having high recovery.
关键词： Etoposide,Core-shell nanoparticles,Hexagonal boron nitride,Urine sample,Molecular imprinted nanosensor
更新于2025-11-21 11:18:25
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Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains
摘要： Controllable synthesis of high-quality hexagonal boron nitride (h-BN) is desired toward the industrial application of 2D devices based on van der Waals heterostructures. Substantial efforts are devoted to synthesize h-BN on copper through chemical vapor deposition, which has been successfully applied to grow graphene. However, the progress in synthesizing h-BN has been significantly retarded, and it is still challenging to realize millimeter-scale domains and control their morphologies reliably. Here, the nucleation density of h-BN on Cu is successfully reduced by over two orders of magnitude by simply introducing a small amount of silicon, giving rise to large triangular domains with maximum 0.25 mm lateral size. Moreover, the domain morphologies can be modified from needles, tree patterns, and leaf darts to triangles through controlling the growth temperature. The presence of silicon alters the growth mechanism from attachment-limited mode to diffusion-limited mode, leading to dendrite domains that are rarely observed on pure Cu. A phase-field model is utilized to reveal the growing dynamics regarding B-N diffusion, desorption, flux, and reactivity variables, and explain the morphology evolution. The work sheds lights on the h-BN growth toward large single crystals and morphology probabilities.
关键词： large domain,boron nitride,growth,morphology,chemical vapor deposition
更新于2025-11-21 11:18:25
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Molten salt synthesis of highly ordered and nanostructured hexagonal boron nitride
摘要： Hexagonal boron nitride (h-BN) is a well-known ceramic that has wide application areas ranging from electronics to metallurgy. However, highly ordered h-BN is conventionally synthesized at high temperatures above 1800 °C. In this work, we investigated the formation of BN from boric acid (H3BO3)-ammonium chloride (NH4Cl) mixture in the sodium chloride (NaCl)-potassium chloride (KCl) eutectic salt. We report the synthesis of highly ordered and nanostructured h-BN at 1000 °C using molten salt synthesis. The effect of starting composition, synthesis temperature, and dwell time on BN formation and its structural ordering were systematically investigated. It is concluded that the molten salt plays important roles in the formation of BN and its structural ordering, which is achieved by i) decomposing the boron (B)-nitrogen (N) bearing reactants that lead to the formation of BN layers, and ii) increasing the mobility of BN layers formed. Furthermore, we propose a possible reaction mechanism that governs the BN formation from the reactant mixture in molten salts and explain the observations based on thermodynamic and kinetic considerations.
关键词： Molten salt synthesis,NaCl-KCl eutectic salt,Boron nitride,Structural ordering,High-resolution transmission electron microscopy
更新于2025-11-21 11:01:37
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A magnetofluorescent boron-doped carbon dots as a metal-free bimodal probe
摘要： High-resolution observation of biological process is vital for biological researches and diagnosing diseases, which requires accurate diagnosis that involves coordinating imaging technologies such as fluorescence and magnetic resonance (MR). Nowadays, metal-based labels have been used for dual modality imaging. However, heavy metal ions are not environment-and organism-friendly. Therefore, it is a desirable to fabricate a metal-free label with fluorescence and MR properties. Herein, we synthesized boron–doped carbon dots (B–CDs) with dual modal properties through a one-pot solvothermal process. Compared with boron-free CDs, B–CDs exhibited apparent red-shift, higher fluorescence intensity, and higher longitudinal relaxivity (r1 = 5.13 mM-1 s-1). It demonstrated that boron doping can enhance the fluorescence intensity of CDs, and maybe lead to form paramagnetic centers. The fluorescence and MR imaging of B–CDs make them a prospective label for clinical applications as a result of their oversimplified synthesis process, low cost, good biocompatibility and low toxicity. It will open a new window for building novel imaging labels.
关键词： Boron,Magnetic resonance,Fluorescence,Carbon dots
更新于2025-11-14 17:03:37
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Crystalline Semiconductor Boron Quantum Dots
摘要： Zero-dimensional boron structures have always been the focus of theoretical research owing to its abundant phase structures and special properties. Boron clusters have been reported extensively by combining structure searching theories and photoelectron spectroscopy experiments, however, crystalline boron quantum dots (BQDs) have rarely been reported. Here we report the preparation of large-scale and uniform crystalline semiconductor BQDs from the expanded bulk boron powders via a facile and efficient probe ultrasonic approach in acetonitrile solution. The obtained BQDs have 2.46 nm in an average lateral size and 2.81 nm in thickness. Optical measurements demonstrate that strong quantum confinement effect occurs in the BQDs, implying the increase of the bandgap from 1.80 eV for the corresponding bulk to 2.46 eV for the BQDs. By injecting the BQDs into polyvinylpyrrolidone as an active layer, a BQDs-based memory device is fabricated which shows a rewriteable nonvolatile memory effect with a low transition voltage of down to 0.5 V and a high ON/OFF switching ratio of 103 as well as a good stability.
关键词： ultrasound,quantum dots,nonvolatile memory device,quantum confinement effect,boron
更新于2025-11-14 15:23:50
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Dynamics of infrared excitations in boron doped diamond
摘要： We report on the investigation of relaxation dynamics of optical excitations in IIb high pressure high temperature (HPHT) diamond doped by natural boron and isotopically enriched 11boron. The measurements were performed with a pump-probe technique using short pump pulses from a wavelength-tunable infrared free electron laser. Lifetimes of excited boron states ranging from a few picoseconds to a few hundred picoseconds, have been derived from the obtained data. The relaxation rates depend on the pumped states, the pump intensity and the diamond lattice temperature. We discuss possible contributions to the optical and nonradiative intracenter relaxation rates observed in these experiments. Theoretical simulations support ultrafast relaxation by multiple phonon emission, for the electronic states with the energy gap exceeding the energy of optical phonon.
关键词： time-resolved spectroscopy,boron-doped diamond,diamond
更新于2025-11-14 15:14:40
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Quantification of hexagonal boron nitride impurities in boron nitride nanotubes <i>via</i> FTIR spectroscopy
摘要： Preparation of high-quality boron nitride nanotubes (BNNTs) from commercially available stock is critical for eventual industry adoption and to perform comprehensive experimental studies of BNNTs. Separation of h-BN and BNNTs is a significant challenge, and equally so, quantification of h-BN content in mixed samples is a major challenge due to their nearly identical properties. This work introduces a simple method of quantifying h-BN content in BNNTs based on FTIR analysis. Quantification is achieved by 'spiking' a BNNT sample with pure nanoscale h-BN as an internal standard. To demonstrate the efficacy of the quantification technique two BNNT enrichment methods, surfactant wrapping and centrifugation, and a novel sonication-assisted isovolumetric filtration are introduced. FTIR spectra of enriched samples show clear trends throughout the processes. We propose and demonstrate that FTIR peak ratios of the Transverse and Buckling modes of mixed h-BN/BNNT samples can be used to calibrate and quantify h-BN content in any BNNT sample. Hopefully, this method enables as-received BNNTs to be quantifiably enriched from low purity commercial feedstocks, enabling future development and study of BNNTs and related technology.
关键词： FTIR spectroscopy,Boron nitride nanotubes,hexagonal boron nitride,enrichment methods,quantification
更新于2025-11-14 15:13:28
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Finite bias evolution of bosonic insulating phase and zero bias conductance in boron-doped diamond: A charge-Kondo effect
摘要： We report novel transport features in heavily boron-doped nanocrystalline diamond films, in particular an anomalous resistance peak near to the superconducting transition temperature and a strong zero bias conductance peak in the differential current-voltage spectra. The shape of the resistance-temperature curves near the critical temperature is seen to be strongly influenced by both magnetic field and bias current. As the bias current is lowered, the resistance peak becomes more pronounced, whereas when the magnetic field is varied the peak shifts towards lower temperatures. The resistance upturn shows a quadratic temperature dependence as expected for a Kondo transition. We find that a number of transport features such as resistance peak height, zero bias conduction peak height and width scale according to a power law dependence. We interpret these features as a result of a charge-Kondo effect where hole dopants act as degenerate Kondo impurities by opening additional pseudo-spin scattering channels.
关键词： bosonic insulating phase,zero bias conductance peak,charge-Kondo effect,boron-doped diamond,superconductivity
更新于2025-09-23 15:23:52