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- 摘要
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- 实验方案
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Fe doped ZnO/BiVO4 heterostructure based large area, flexible, high performance broadband photodetector with ultrahigh quantum yield
摘要： Pristine ZnO has been widely explored for UV photodetectors; however it’s utility in broadband photodetectors is still an impediment due to absorbance in UV region only with low quantum efficiency and responsivity that can be accredited to high recombination rate of photo generated charge carriers. To address this issue, we report Fe metal doped 2D ZnO thin films through band gap engineering and 1D electrospun mixed inorganic monoclinic BiVO4 nanofibers heterostructure on ITO coated PET substrate based broadband photodetector (PD) with ultra-high responsivity and EQE values in comparison to PDs fabricated using expensive cleanroom techniques. BiVO4 plays the dual role of captivating photons in the visible and NIR regions and creating local electric fields at the interface of Fe doped ZnO (FZO)-BiVO4 heterostructure which helps in separation of electron-hole pairs. The robustness of the flexible PD was further examined under repeated conditions of bending cycles (upto 500) yielding stable response. The responsivity values obtained for UV, Visible and NIR lights are 7.35 A/W, 3.8 A/W and 0.18 A/W with very high EQE values of 2501.7 %, 851.2 % and 28.3 % respectively. The facile and cost-effective fabrication of the device with high performance gives a new approach for developing flexible electronics and high-performance optoelectronics devices.
关键词： Heterostructure,Broadband photodetector,Fe doped ZnO,BiVO4,ultrahigh quantum yield
更新于2025-09-23 15:21:01
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Ultrasensitive Ambient-Stable SnSe<sub>2</sub>-based Broadband Photodetectors for Room-Temperature IR/THz Energy conversion and Imaging
摘要： The advent of tin diselenide (SnSe2) enables novel pathways for optoelectronics, due to its reduced cost, ultralow thermal conductivity and high potential for thermoelectricity. To date, SnSe2-based optoelectronic devices have been focused on the visible and infrared range of the electromagnetic spectrum, with efficiency sharply decreasing at longer wavelength. Here, we present SnSe2 photodetectors with exfoliated SnSe2 nanosheets extended in the range of THz frequency, exhibiting high responsivity (170 V W-1), fast speed(2.2 μs), as well as room-temperature operation, based on efficient production of hot electrons under deep-subwavelength electromagnetic focus, which outperform thermal-based photodetectors. The outstanding ambient stability of our broadband photodetectors in a timescale of months is due to the chemical inertness of stoichiometric SnSe2 crystals, validated by surface-science experiments. Our results demonstrate the suitability of SnSe2for multispectral sensing and real-time imaging. Our SnSe2-based detectors show high-contrast imaging from terahertz (THz) up to visible.
关键词： Photothermoelectric,Terahertz,Tin diselenide,Broadband photodetector
更新于2025-09-23 15:21:01
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Engineering carbon quantum dots for enhancing the broadband photoresponse in a silicon process-line compatible photodetector
摘要： Realization of heterojunction based broadband photodetectors (ultraviolet to near-infrared) compatible with existing silicon process technology has great promise for advanced optoelectronic applications. In this report, we demonstrate the application of carbon quantum dots (CQDs) synthesized from organic waste via a facile fabrication technique as a potential broadband photodetector in a hybrid (organic–inorganic) heterostructure with Si. The broadband photoresponse is further improved by impregnating the CQDs with reduced graphene oxide (rGO) and silver nanoparticles (AgNPs). The results show that the optimized incorporation of rGO aids in enhancing the photoresponse due to effective carrier transport, whereas AgNPs intensify the optical absorption due to localized surface plasmon resonance. The maximum responsivity and detectivity for the engineered CQDs are found to be around 1 A W?1 and 2 × 1012 Jones, respectively. This work demonstrates an economic, effective and feasible approach to harness natural resources for technological purposes, which can efficiently be adopted with presently available industry scale technologies.
关键词： silver nanoparticles,reduced graphene oxide,carbon quantum dots,silicon process technology,broadband photodetector
更新于2025-09-16 10:30:52
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Amorphous ZnO/PbS quantum dots heterojunction for efficient responsivity broadband photodetectors
摘要： The integration of lead sulfide quantum dots (QDs) with high conductivity material that is compatible with a scalable fabrication is an important route for the applications of QDs based photodetectors. Herein, we firstly developed a broadband photodetector by combining amorphous ZnO and PbS QDs forming a heterojunction structure. The photodetector showed detectivities up to 7.9x1012 jones and 4.1x1011 jones under 640 nm and 1310 nm illumination, respectively. The role of oxygen background pressure on the electronic structure of ZnO films grown by pulsed laser deposition was systematically studied, and it was found to play an important role on the conductivity, associated to the variation of oxygen vacancy concentration. By increasing the oxygen vacancy concentration, the electron mobility of amorphous ZnO layers dramatically increased and work function decreased, which were beneficial for the photocurrent enhancement of ZnO/PbS QDs photodetectors. Our results provide a simple and highly scalable approach to develop broadband photodetectors with high performance.
关键词： oxygen vacancy,amorphous ZnO,broadband photodetector,mobility,heterojunction
更新于2025-09-16 10:30:52