[IEEE 2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS) - Gammarth-Tunis, Tunisia (2019.4.28-2019.5.1)] 2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS) - Fast and Accurate Simulation of Ultrascaled Carbon Nanotube Field-Effect Transistor Using ANN Sub-Modeling Technique

摘要： In this paper, we have proposed a new modeling methodology based on the artificial neural networks (ANN) to simulate the ultra-scaled carbon nanotube field-effect transistor (CNTFET). The sub-modeling concept has been employed to efficiently simplify the overall modeling process. The developed sub-models have been compared with the mode space non- equilibrium Green’s function ( MS-NEGF) simulations in terms of the resulted drain current, where a good agreement has been recorded. In addition, simulation tests have shown that the proposed smart models are faster of about two order of magnitude over the standard MS-NEGF simulation. The obtained results indicate that the proposed ANN-based sub- modeling is an accurate and computationally efficient approach, which can be successfully used to simulate, analyze, and optimize the ultra-scaled CNTFETs and the futuristic CNT-based nanoscale integrated circuits.