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Effect of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Spray Deposited V2O5 Thin Films
摘要： Nanostructured vanadium pentoxide (V2O5) thin films have been deposited by a simple and cost-effective spray pyrolysis technique (SPT) at substrate temperature 300 °C and post annealed at atmospheric conditions in the temperature range from 300 °C to 500 °C at a constant rate of heating. The influence of post annealing heat treatment on the crystallization of V2O5 has been investigated. Films were characterized structurally by X-ray diffraction, morphologically by Scanning electron microscopy, optically using UV-Vis spectrophotometer, electrical characterization using Hall probe and Raman spectroscopy has been carried out for phase confirmation. X-ray diffraction analysis (XRD) revealed that, as deposited films were orthorhombic structures with a preferential orientation along (0 0 1) direction. Moreover, it was observed that crystallite size increases from 22 nm to 56 nm with increase in annealing temperature. Optical properties of these samples were studied in the wavelength range 300 – 1000 nm. Raman spectrum confirms the layered structure of V2O5 thin films. Hall Effect measurements indicate that the change in carrier concentration with increase in annealing temperature.
关键词： Raman spectroscopy,carrier density,annealing temperature,V2O5
更新于2025-11-21 11:18:25
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Percolation Effects in Electrolytically-Gated WS <sub/>2</sub> /Graphene Nano:Nano Composites
摘要： Mixed networks of conducting and non-conducting nanoparticles show promise in a range of applications where fast charge transport is important. While the dependence of network conductivity on the conductive mass fraction (Mf) is well understood, little is known about the Mf-dependence of mobility and carrier density. This is particularly important as the addition of graphene might lead to increases in the mobility of semiconducting nanosheet-network transistors. Here, we use electrolytic gating to investigate the transport properties of spray-coated composite networks of graphene and WS2 nanosheets. As the graphene Mf is increased, we find both conductivity and carrier density to increase in line with percolation theory with percolation thresholds (~8 vol%) and exponents (~2.5) consistent with previous reporting. Perhaps surprisingly, we find the mobility increases modestly from ~0.1 cm2/Vs (for a WS2 network) to ~0.3 cm2/Vs (for a graphene network) which we attribute to the similarity between WS2-WS2 and graphene-graphene junction resistances. In addition, we find both the transistor on- and off-currents to scale with Mf according to percolation theory, changing sharply at the percolation threshold. Through fitting, we show that only the current in the WS2 network changes significantly upon gating. As a result, the on-off ratio falls sharply at the percolation threshold from ~104 to ~2 at higher Mf. Reflecting on these results, we conclude that the addition of graphene to a semiconducting network is not a viable strategy to improve transistor performance as it reduces the on:off ratio far more than it improves the mobility.
关键词： graphene,ionic liquid,thin film transistor,WS2,carrier density,composite,mobility,Printed electronics
更新于2025-10-22 19:40:53
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Optical, electrical, structural and magnetic properties of BiSe thin films produced by CBD on different substrates for optoelectronics applications
摘要： BiSe thin films have been grown on substrates as PMMA, ITO, glass and Si wafer by using chemical bath deposition (CBD) method. Deposition temperature and time and pH are kept to be constant during the production of the thin films. The thickness of BiSe thin films, which are produced on ITO, glass, PMMA and Si wafer substrate are 513, 468, 1039 and 260 nm, respectively. According to GAXRD results, the films, which are grown on glass and PMMA substrate, have amorphous structure, but, the films, which are grown on ITO and Si wafer substrate, have peaks of Bi2Se3 crystal. Grain sizes, crystallization number per unit area and dislocation density for ITO and Si wafer substrate are calculated as 112.40 nm and 43.04 nm; 2.25×10?5 and 7.91×10?5 (1/nm2), respectively. The contact angles and critical surface tension of distilled water, ethylene glycol, formamide and diiodamethane liquids for thin films grown on glass, ITO, PMMA and Si wafers were obtained by the Zisman method. The % transmittance and % reflectance values of thin films grown on glass, ITO, PMMA are calculated as % T: 79.90, 92.76 and 67.37; % R: 6.18, 2.07 and 10.59, respectively. Eg values of thin films grown on glass, ITO, PMMA are calculated as Eg=1.92; 2.18; 1.60 eV. The extinction coefficients, refractive indexes and relative dielectric constants of thin films grown on glass, ITO, PMMA are calculated as k=0.007; 0.002 and 0.012; n=1.65; 1.34 and 1.96; ε1=0.271; 0.083 and 0.528 respectively. Sheet resistance, hall mobility, sheet carrier densities, bulk carrier densities and conductivity types for glass, ITO, PMMA and Si are 6.52×107, 6.65×101, 1.09×108 and 6.45×102 (Ω/cm2); 2.38, 1.21×10?1, 5.34 and 1.52 (cm2/V.s); 4.01×1010, 7.71×1017, 1.06×1010 and 6.34×1015 (cm?2); 4.58×1014, 1.50×1022, 1.02×1014 and 2.89×1020 (cm?3); p, n, p and p, respectively. In addition, I–V characteristics and changes of magnetoresistance values versus magnetic field of the thin films are obtained by Van der Pauw method and HEMS.
关键词： magnetoresistance,thin film deposition,optical band gap,carrier density,surface properties,crystal growth
更新于2025-09-23 15:21:21
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Effect of photo-irradiation on metal insulator transition in vanadium dioxide
摘要： We report a large transition temperature (TC) decrease in a VO2 thin film device under photo-irradiation. With the increasing photo-irradiation intensity (PIntensity) with a wavelength of 405 nm, the TC of the VO2 device decreased at a rate of (cid:2)3:2 (cid:3) 10(cid:4)2 W=cm2 and reached as low as 40.0 (cid:5)C at a PIntensity of 8:4 (cid:3) 102 W=cm2. While the change in TC is primarily due to the photothermal effect when the PIntensity is below 3:6 (cid:3) 102 W=cm2, both the photothermal and photo-induced carrier density effects contribute to the change in TC when the PIntensity is above 6:4 (cid:3) 102 W=cm2.
关键词： metal-insulator transition,vanadium dioxide,photothermal effect,photo-induced carrier density,photo-irradiation
更新于2025-09-23 15:21:21
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Large signal analysis of multiple quantum well transistor laser: Investigation of imbalanced carrier and photon density distribution
摘要： In this paper, we present a large-signal and switching analysis for the Heterojunction Bipolar Transistor Laser (HBTL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for carrier transport, nonlinear optical gain, and optical confinement factor, we have simulated the large-signal response of the HBTL in relatively low and high modulation frequencies. Our results predict that for multiple quantum well (MQW) structures at low frequencies, there should not be a difference in either the carrier density or the photon density. However, the carrier concentration can be differently distributed between subsequent wells in the case of a high speed yet large-signal input. This leads to increased linewidth instead as it depends on ΔNqw. We show the effect of different structural parameters on the switching behavior by performing a switching analysis of the single quantum well and MQW structures using computationally efficient numerical methods. A set of coupled rate equations are solved to investigate the large-signal and switching behavior of MQW-HBTL. Finally, to have a comprehensive judgment about this optoelectronic device, we introduce a relative performance factor taking into account all the optoelectronic characteristics such as the output power, ac current gain, modulation bandwidth, and base threshold current, as well as turn-on time in order to design a suitable TL for optoelectronic integrated circuits.
关键词： multiple quantum well,switching analysis,carrier density,Heterojunction Bipolar Transistor Laser,large-signal analysis,photon density
更新于2025-09-23 15:19:57
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Photodetector with Controlled Relocation of Carrier Density Peaks: Concept and Numerical Simulation
摘要： Modern electronics faces the degradation of metal interconnection performance in integrated circuits with nanoscale feature dimensions of transistors. The application of constructively and technologically integrated optical links instead of metal wires is a promising way of the problem solution. Previously, we proposed the advanced design of an on-chip injection laser with an AIIIBV nanoheterostructure, and a functionally integrated optical modulator. To implement the efficient laser-modulator-based optical interconnections, technologically compatible photodetectors with subpicosecond response time and sufficient sensitivity are required. In this paper, we introduce the concept of a novel high-speed photodetector with controlled relocation of carrier density peaks. The device includes a traditional p-i-n photosensitive junction and an orthogonally oriented control heterostructure. The transverse electric field displaces the peaks of electron and hole densities into the regions with low carrier mobilities and lifetimes during the back edge of an optical pulse. This relocation results in the fast decline of photocurrent that does not depend on the longitudinal transport of electrons and holes. We develop a combined numerical model based on the Schrodinger-Poisson equation system to estimate the response time of the photodetector. According to the simulation results, the steep part of the photocurrent back edge has a duration of about 0.1 ps.
关键词： combined numerical model,high-speed AIIIBV optoelectronic devices,photodetector with controlled relocation of carrier density peaks,on-chip optical interconnections,Schrodinger-Poisson equation system
更新于2025-09-23 15:19:57
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Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC
摘要： We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm2/V·s and 3.23 × 1013 cm?2, respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.
关键词： MOCVD,2DEG,Mobility,AlGaN/GaN HEMT,Carrier Density,Edge and Screw Dislocation
更新于2025-09-19 17:15:36
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Quantifying charge carrier density in organic solar cells by differential charging techniques
摘要： Accurate determination of charge carrier density in organic solar cells under light irradiation is essential because charge carrier density is directly related to the bimolecular recombination rate and open-circuit voltage of the cells. We investigate the robustness of transient photovoltage/current (TPV/C) and impedance spectroscopy (IS) to interference from the geometric capacitance of the cells (Cgeo) during quantification of the charge carrier density. TPV/C and IS accurately quantify the charge carrier density of bulk heterojunction cells with small Cgeo. For planar heterojunction cells with a larger Cgeo contribution, IS fails to separate the charge carriers in the organic layer from those in the electrodes. In contrast, TPV/C eliminates the effect of Cgeo and gives a reasonable estimation of the charge carrier density in the organic layer with the planar heterojunction, demonstrating that TPV/C is more robust than IS to interference from Cgeo of the cells.
关键词： transient photovoltage/current,geometric capacitance,charge carrier density,organic solar cells,impedance spectroscopy
更新于2025-09-12 10:27:22
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Investigation of carrier density and mobility variations in graphene caused by surface adsorbates
摘要： Conductivity, carrier concentration and carrier mobility in graphene were investigated as a function of time in response to ionized donor and acceptor adsorbates. While a reduction in conductivity and hole density in graphene was observed upon exposure to a weak electron donor NH3, the carrier mobility was found to increase monotonically. The opposite behavior is observed upon exposure to NO2, which is expected based on its typical electron withdrawing property. Upon exposure to C9H22N2, a strong donor, it resulted in the transformation of graphene from p-type to n-type, although the inverse variation of carrier concentration and mobility was still observed. The variational trends remained unaltered even after intentional introduction of defects in graphene through exposure to oxygen plasma. The responses to C9H22N2, NH3 and NO2 exposures underline a strong influence by ionized surface adsorbates that we explained via a simple model considering charged impurity scattering of carriers in graphene.
关键词： Carrier density,Gas molecule adsorption,Graphene,Graphene mobility,NH3,NO2
更新于2025-09-10 09:29:36
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Transport of NIST Graphene Quantized Hall Devices and Comparison with AIST Gallium-Arsenide Quantized Hall Devices
摘要： Two graphene quantized Hall resistance (QHR) devices made at the National Institute of Standards and Technology (NIST) were hand carried to the National Institute for Advanced Industrial Science and Technology (AIST) and compared to a GaAs QHR device and a 100 ? standard resistor. Measurement of the 100 ? resistor with the graphene QHR devices agreed within 5 x 10-9 of the 100 ? resistor GaAs measurements. After the initial measurements, the carrier density of the graphene devices was adjusted at AIST to restore the device properties to operate at low magnetic fields of 4 T to 6 T.
关键词： carrier density,cryogenic current comparator,graphene,quantized Hall resistance,standard resistor
更新于2025-09-10 09:29:36