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The Cesium doping using the nonstoichiometric precursor for improved CH3NH3PbI3 perovskite films and solar cells in ambient air
摘要： Organic-inorganic hybrid perovskite solar cells have shown great prospect as a low-cost and high efficiency photovoltaic technology. The quality of the perovskite absorber layer is most critical to the performance of the device, and the stability remains one of the challenging issues. In this paper, the Cesium (Cs) doping perovskite film was prepared from nonstoichiometric precursor solution in ambient and humidity-controlled conditions. The results showed that the crystallinity, uniformity, absorption, Photo-luminescence intensity and the thermal stability of these films can be effectively improved compared with the films fabricated from stoichiometric one, which is attributed to the combined effect of the Cs doping and excess methylammonium cations passivation. Finally, the highest efficiency of the perovskite solar cells fabricated from nonstoichiometric solution reached to 14.1%, which is 12.8% higher than that of the control device from stoichiometric solution (12.5%). Furthermore, the device displayed the high stability and efficiency degradation of only 2% occurring over a period of 5 weeks in ambient air without encapsulation. This reported work provides a pathway for further improving the performance of perovskite solar cells with higher stability.
关键词： Nonstoichiometric solution,Cesium doping,Stability,Organic-inorganic hybrid perovskite solar cells
更新于2025-09-11 14:15:04
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High-Temperature Cs <sub/>x</sub> C <sub/>58</sub> Fullerides
摘要： Cs doped non-IPR fullerides have been grown by co-depositing C58 cations and Cs atoms on HOPG. The C58 cages, as building blocks of the material, form a predominantly covalently stabilized scaffold, C58–C58, which is doped by Cs atoms thermally diffusing across the bulk. The heating of the solid CsxC58 sample is accompanied by sublimation of Cs, C58, and C60 species from the topmost layers of the sample. However, the major part (>94%) of the material survives the heating procedure and constitutes a doped high-temperature carbon solid, HT-CsxC58. The new non-IPR material exhibits surprisingly high thermal stability. It survives a heating flash up to 1100 K at which the classic IPR-CsxC60 phase does not exist anymore. However, the thermally treated HT-CsxC58 phase exhibits a considerably depleted Cs content (x < 2) and a significantly modified carbon scaffold. The apparent stability of the scaffold results from covalent C–C bonds interlinking adjacent carbon cages. Cs atoms in the HT-CsxC58 phase contribute to this stability only as minority species, forming comparably weak ionic bonds with C58–C58 oligomers. However, this interaction facilitates the formation of structural defects (new non-IPR sites) in carbon cages. The surface topography of the HT-CsxC58 as monitored by SPEM, AFM, and SEM is governed by islands standing out by their elevated Cs/C ratio.
关键词： X-ray photoelectron spectroscopy,fullerenes,desorption,isolated pentagon rule,cesium doping
更新于2025-09-09 09:28:46