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Copper’s Role in the Photoluminescence of Ag1?xCuxInS2 Nanocrystals, from Copper-Doped AgInS2 (x ~ 0) to CuInS2 (x = 1)
摘要： A series of Ag1?xCuxInS2 nanocrystals (NCs) spanning from 0 ≤ x ≤ ~1 was synthesized by partial cation exchange to identify copper’s contributions to the electronic structure and spectroscopic properties of these NCs. Discrete mid-gap states appear above the valence band (VB) upon doping AgInS2 NCs with Cu+ (small x). Density functional theory (DFT) calculations confirm that these mid-gap states are associated with the 3d valence orbitals of the Cu+ impurities. With increasing x, these impurity d levels gradually evolve to become the VB edge of CuInS2 NCs, but the highest-occupied orbital's description does not change significantly across the entire range of x. In contrast with this gradual evolution, Ag1?xCuxInS2 NC photoluminescence shifts rapidly with initial additions of Cu+ (small x) but then becomes independent of x beyond x > ~0.20, all the way to CuInS2 (x = 1.00). Data analysis suggests small but detectable hole delocalization in the luminescent excited state of CuInS2 NCs, estimated by Monte Carlo simulations to involve at most about four copper ions. These results provide unique insights into the luminescent excited states of these materials and they reinforce the description of CuInS2 NCs as “heavily copper-doped NCs” in which photogenerated holes are rapidly localized in copper 3d-based orbitals.
关键词： silver indium sulfide,nanocrystal,cation exchange,Copper indium sulfide,copper-doped,photoluminescence
更新于2025-09-23 15:23:52
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Copper-doped hybrid Agx–Auy@ZnO nanoparticles and their enhanced photocatalytic activities
摘要： In this paper, we report on the simple polyol synthesis of copper-doped hybrid Agx–Auy@ZnO photocatalysts. The obtained samples have been characterized by X-ray diffraction, UV–Vis diffuse reflectance spectroscopy, transmission electron microscopy and an N2 adsorption study. The experiment results show that Ag, Au and Ag–Au alloy nanoparticles (NPs) successfully load onto the surface of the assembled Cu-doped ZnO. The photocatalytic performances of Cu-doped Agx–Auy@ZnO nanomaterials have been tested using diuron herbicide as a model contaminant under simulated solar light irradiation. The addition of Ag and/or Au nanoparticles to doped ZnO was strongly beneficial to the rate constant displaying a volcano-like pattern as a function of the Ag and Au content. A maximum pseudo-first-order rate constant of 18.55 × 10?3 min?1, 22.70 × 10?3 min?1 and 24.74 × 10?3 min?1 was achieved on Cu-doped Ag0.3@ZnO, Au0.5@ZnO and Ag0.5–Au0.3@ZnO respectively. The Cu-doped Ag0.5–Au0.3@ZnO bimetallic nanoparticles show the highest photocatalytic activity due to the synergistic effect by effective electron transfer.
关键词： Hybrid photocatalyst,Copper-doped,Diuron,Water treatment,Polyol process,One pot,Zinc oxide,Gold,Photocatalysis,Solar light,Silver
更新于2025-09-23 15:23:52
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Observation of a phonon bottleneck in copper-doped colloidal quantum dots
摘要： Hot electrons can dramatically improve the efficiency of solar cells and sensitize energetically-demanding photochemical reactions. Efficient hot electron devices have been hindered by sub-picosecond intraband cooling of hot electrons in typical semiconductors via electron-phonon scattering. Semiconductor quantum dots were predicted to exhibit a "phonon bottleneck" for hot electron relaxation as their quantum-confined electrons would couple very inefficiently to phonons. However, typical cadmium selenide dots still exhibit sub-picosecond hot electron cooling, bypassing the phonon bottleneck possibly via an Auger-like process whereby the excessive energy of the hot electron is transferred to the hole. Here we demonstrate this cooling mechanism can be suppressed in copper-doped cadmium selenide colloidal quantum dots due to femtosecond hole capturing by copper-dopants. As a result, we observe a lifetime of ~8.6 picosecond for 1Pe hot electrons which is more than 30-fold longer than that in same-sized, undoped dots (~0.25 picosecond).
关键词： phonon bottleneck,electron-phonon scattering,hot electrons,colloidal quantum dots,copper-doped
更新于2025-09-16 10:30:52
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Copper-Doped Iron Carbide as Counter Electrodes for Dye- Sensitized Solar Cells
摘要： A facile method of pyrolysis of 2-methyl imidazole is used to prepare copper-doped iron carbide materials as counter electrodes for dye-sensitized solar cells. The content of copper in copper doped iron carbide materials are: 0.25%, 0.5%, 0.75%, 1% (molecular proportion). Among these DSSCs made from different Cu content Fe3C cathodes, the Fe3C-0.75%Cu based on the Cu content of 0.75% counter electrode yields the highest energy conversion efficiency of 5.68%. Compared to the Pt/C- based DSSC (6.22%), the DSSC fabricated from Fe3C-0.75%Cu has a similar η. To evaluate the chemical catalysis of copper-doped iron carbide counter electrodes toward reduction, cyclic voltammetry and electrochemical impedance spectra are carried out to characterize the counter electrodes. All the results have revealed that doped with copper can improve the catalytic ability of iron carbide counter electrodes. And the copper doped iron carbide counter electrode owns low prices of raw materials, simple production process, so it has very wide application prospects.
关键词： iron carbide,counter electrodes,DSSC,copper-doped
更新于2025-09-11 14:15:04
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Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications
摘要： In this study, efforts were devoted to unveiling the dual role of single crystalline Cu (5%) doped ZnO (Cu:ZnO) synthesized by a simple and low-cost chemical process and to investigate its efficacy on resistive switching (RS) applications. It was found that when Cu:ZnO was annealed at a lower temperature of 450 °C and integrated onto ITO/glass for RS applications, only oxygen mediated vacancies were responsible for its resistive switching. However, ferroelectric properties have been observed when the same Cu:ZnO was annealed at a higher temperature of 800 °C and integrated onto Nb doped SrTiO3. X-ray diffraction, high resolution transmission electron microscope, x-ray photoelectron spectroscopy, UV-VIS-near infrared spectrometer, and piezoelectric force microscopy (PFM) were employed to study the crystallinity, interfaces, chemical compositions, bandgap, and domains in Cu:ZnO thin films, respectively. The bandgap of Cu:ZnO was found to be 3.20 eV. PFM study exhibits the domain inversion with 180° polarization inversion by applying an external bias, evidencing its effectiveness for memory applications. When the electrical characteristics were concerned, the RS device based on this ferroelectric Cu:ZnO offers better performance, such as lower SET/RESET voltages (～1.40 V), higher retention (up to 106 s) without distortion, and higher ON/OFF ratio (2.20 × 103), as compared to the former lower temperature annealed Cu:ZnO devices. A band-diagram was proposed, and transport studies were developed to understand the operational mechanism of these devices. This study explains both the limits and scopes of Cu:ZnO RS devices and formulates an idea which may accelerate the design of future generation devices.
关键词： copper doped zinc oxide,memory applications,band-diagram,resistive switching,ferroelectric properties
更新于2025-09-09 09:28:46