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Higha??temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
摘要： We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self–assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.
关键词： GaAs/AlGaAs,quantum photonics,arsenization dynamics,high–temperature droplet epitaxy,quantum dots
更新于2025-09-23 15:21:01
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Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates
摘要： A temperature activated crossover between two nucleation regimes is observed in the behavior of Ga droplet nucleation on vicinal GaAs(111)A substrates with a miscut of 2° towards (1ˉ1ˉ2). At low temperature (<400 °C) the droplet density dependence on temperature and flux is compatible with droplet nucleation by two-dimensional diffusion. Increasing the temperature, a different regime is observed, whose scaling behavior is compatible with a reduction of the dimensionality of the nucleation regime from two to one dimension. We attribute such behavior to a presence of finite width terraces and a sizeable Ehrlich-Schw?bel barrier at the terrace edge, which hinders adatom diffusion in the direction perpendicular to the steps.
关键词： Quantum Dots,GaAs(111)A,Dimensionality crossover,Droplet Epitaxy,Nucleation
更新于2025-09-19 17:13:59
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Quantum Dots - Theory and Applications || Quantum Dots Prepared by Droplet Epitaxial Method
摘要： In this work, we are dealing with the droplet epitaxially prepared quantum dots. This technology is not only an alternative way of the strain induced technique to prepare quantum dots, but it allows us to make various shaped nano structures from various material. The present paper deals not only with the so called conventional shaped quantum dot but also with the ring shaped dot, with the inverted dot and with dot molecules as well. Their thechnology, opto-electronical and the structural properties are also discussed.
关键词： MBE,QD,AlGaAs,droplet epitaxy,AlAs,GaAs
更新于2025-09-11 14:15:04