Influence of Pb on structure, optical and electrical properties of Zn1-XPbXS semiconductor compounds at low temperatures

摘要： Zn1-XPbXS (x = 0–0.4 in steps of 0.1) ternary semiconductor samples have been prepared by co-precipitation method. The structural, optical and electrical studies have been carried out on all these samples to understand the influence of Lead on these properties. X-ray diffractograms showed that all Zn1-XPbXS samples have poly-crystalline nature with Hexagonal phase. The room temperature optical absorption studies revealed that energy gap decreases with increase of Pb in Zn1-XPbXS compounds. The temperature-dependent conductivity, measured in the range 300–4 K, led to understand that the conduction mechanisms at 60 K and 30 K are different. The activation energies evaluated at low (300–60 K) and very low temperature (60–30 K) regions are 38.03–32.58 meV and17.99–13.56 meV respectively. Activation energy and conductivity of Zn1-XPbXS samples increase with the increase of Pb. The samples exhibited low freezing temperature points indicating the possibility of their use in low temperature device applications.