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Electroresistance of Pt/BaTiO<sub>3</sub>/LaNiO<sub>3</sub> ferroelectric tunnel junctions and its dependence on BaTiO<sub>3</sub> thickness
摘要： Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention due to their great potential in next generation non-volatile memories. In this work, we report on thickness-dependent tunneling electroresistance (TER) and corresponding evolution of transport behavior in Pt/BaTiO3/LaNiO3 FTJs with various BaTiO3 thicknesses of 2.0, 3.2, and 4.8 nm. The TER effect is observed in the 3.2 nm-thick Pt/BaTiO3/LaNiO3 tunnel junction and an ON/OFF current ratio of ~170 is achieved due to the modulation of barrier height by polarization reversal. When the BaTiO3 is increased to 4.8 nm in thickness, the ferroelectric-modulation of the barrier profile becomes more pronounced and the dominant transport mechanism changes from electron tunneling to thermally-activated thermionic injection. As a result, the OFF state current is significantly reduced due to the suppression of the Fowler-Nordheim tunneling with increased width and height of the BaTiO3 barrier. A greatly improved ON/OFF current ratio of ~12500 is thus achieved in the 4.8 nm-thick Pt/BaTiO3/LaNiO3 FTJ device. These results facilitate deeper understanding of the TER effects from the viewpoint of not only the barrier profile but also the transport mechanism.
关键词： Pulsed laser deposition,Ferroelectric tunnel junctions,Ferroelectric memory,Resistive switching
更新于2025-09-23 15:23:52
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Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions
摘要： Complementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current-sneak and current-leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti-serial connection of two ferroelectric tunnel junctions, based on BaTiO3, with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states (“1” = “HRS+LRS” and “0” = “LRS+HRS”), where HRS (LRS) indicate the high (low) resistance state of each ferroelectric tunnel junction. Remarkably, these states have an identical and large resistance in the remanent state, characteristic of CRS. Here, protocols for writing information are reported and it is shown that non-destructive or destructive reading schemes can be chosen by selecting the appropriate reading voltage amplitude. Moreover, this dual-tunnel device has a significantly lower power consumption than a single ferroelectric tunnel junction to perform writing/reading functions, as is experimentally demonstrated. These findings illustrate that the recent impressive development of ferroelectric tunnel junctions can be further exploited to contribute to solving critical bottlenecks in data storage and logic functions implemented using RS elements.
关键词： ferroelectric tunnel junctions,BaTiO3,complementary resistive switching,ferroelectric
更新于2025-09-19 17:15:36
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Asymmetric Resistive Switching Dynamics in BaTiO <sub/>3</sub> Tunnel Junctions
摘要： The resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high-resistance state (HRS) and the low-resistance state (LRS) is largely asymmetric being smooth from LRS to HRS, but proceeds via avalanches in the HRS-to-LRS transitions. It is shown that this distinct behavior is related to the presence of an imprint field in the junction and has important consequences on the junction’s performance.
关键词： ferroelectric tunnel junctions,ferroelectric dynamics,neuromorphic computing,BaTiO3 films,memristors
更新于2025-09-09 09:28:46