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Direct Imaging of Surface Plasmon-Driven Hot Electron Flux on the Au Nanoprism/TiO <sub/>2</sub>
摘要： Direct measurement of hot electron flux from a plasmonic Schottky nanodiode is important for obtaining fundamental insights explaining the mechanism for electronic excitation on a surface. Here, we report the measurement of photo-induced hot electrons on a triangular Au nanoprism on TiO2 under incident light with photoconductive atomic force microscopy (pc-AFM), which is direct proof of the intrinsic relation between hot electrons and localized surface plasmon resonance. We find that the local photocurrent measured on the boundary of the Au nanoprism is higher than that inside the Au nanoprism, indicating that field confinement at the boundary of the Au nanoprism acts as a hot spot, leading to the enhancement of hot electron flow at the boundary. Under incident illumination with a wavelength near the absorption peak (645 nm) of a single Au nanoprism, localized surface plasmon resonance resulted in the generation of a higher photo-induced hot electron flow for the Au nanoprism/TiO2, compared with that at a wavelength of 532 nm. We show that the application of a reverse bias results in a higher photocurrent for the Au nanoprism/TiO2, which is associated with a lowering of the Schottky barrier height caused by the image force. These nanoscale measurements of hot electron flux with pc-AFM indicate efficient photon energy transfer mediated by surface plasmons in hot electron-based energy conversion.
关键词： hot electron,Photoconductive atomic force microscopy,localized surface plasmon resonance,Schottky diode,field confinement,Au nanoprism
更新于2025-09-23 15:23:52
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[IEEE 2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC) - Alexandria, Egypt (2019.12.15-2019.12.16)] 2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC) - Circularly Polarized Ridge Gap Waveguide Fed SIW Dielectric Resonator Antenna
摘要： The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW exhibits significantly enhanced field confinement as compared with the traditional low-index slot waveguides and the hybrid metal dielectric slot waveguides. By controlling the thicknesses of different layers, an optimized HPSW structure with a better tradeoff between field confinement and propagation length has been simultaneously achieved.
关键词： field confinement,multi-layer structure,Hybrid plasmonic slot waveguide
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Power Electronics, Control and Automation (ICPECA) - New Delhi, India (2019.11.16-2019.11.17)] 2019 International Conference on Power Electronics, Control and Automation (ICPECA) - Failure Rate Basics for a Case Study on Grid Connected Photovoltaic Plant
摘要： The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW exhibits significantly enhanced field confinement as compared with the traditional low-index slot waveguides and the hybrid metal dielectric slot waveguides. By controlling the thicknesses of different layers, an optimized HPSW structure with a better tradeoff between field confinement and propagation length has been simultaneously achieved.
关键词： Hybrid plasmonic slot waveguide,multi-layer structure,field confinement
更新于2025-09-19 17:13:59