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Ternary Polymer Solar Cells Facilitating Improved Efficiency and Stability
摘要： The use of a ternary active layer offers a promising approach to enhance the power conversion efficiency (PCE) of polymer solar cells (PSCs) via simply incorporating a third component. Here, a ternary PSC with improved efficiency and stability facilitated by a new small molecule IBC-F is demonstrated. Even though the PBDB-T:IBC-F-based device gives an extremely low PCE of only 0.21%, a remarkable PCE of 15.06% can be realized in the ternary device based on PBDB-T:IE4F-S:IBC-F with 20% IBC-F, which is ≈10% greater than that (PCE = 13.70%) of the control binary device based on PBDB-T:IE4F-S. The improvement in the device performance of the ternary PSC is mainly attributed to the enhancement of fill factor, which is due to the improved charge dissociation and extraction, suppressed bimolecular and trap-assisted recombination, longer charge-carrier lifetime, and enhanced intermolecular interactions for preferential face-on orientation. Additionally, the ternary device with 20% IBC-F shows better thermal and photoinduced stability over the control binary device. This work provides a new angle to develop the third components for building ternary PSCs with enhanced photovoltaic performance and stability for practical applications.
关键词： power conversion efficiency,stability,fill factor,ternary polymer solar cells
更新于2025-09-12 10:27:22
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Uniform Permutation of Quasi-2D Perovskites by Vacuum Poling for Efficient, High-Fill-Factor Solar Cells
摘要： It is widely accepted that vertically aligning quasi-2D perovskites can improve power conversion efficiency due to directional charge transport from small to large-n-value nanoplates. Here, we report a different strategy of uniformly arranging different-n-value 2D nanoplates (PEA2MAn-1PbnI3n+1) based on our vacuum poling method to enable superior isotropic carrier transport. Consequently, the high efficiency of 18.04% with open-circuit voltage of 1.223 V and champion fill-factor (FF) of 82.4% are demonstrated, presenting a new approach to develop advanced quasi-2D perovskite optoelectronic devices.
关键词： isotropic carrier transport,high-fill-factor,vacuum poling,solar cells,quasi-2D perovskites
更新于2025-09-11 14:15:04
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Voltage dependent photoluminescence and how it correlates to the fill factor and open-circuit voltage in perovskite solar cells
摘要： Optimizing the photoluminescence (PL) yield of a solar cell has long been recognized as a key principle to maximize the power conversion efficiency. While PL measurements are routinely applied to perovskite films and solar cells under open-circuit conditions (VOC), it remains unclear how the emission depends on the applied voltage. Here, we performed PL(V) measurements on perovskite cells with different hole transport layer thicknesses and doping concentrations resulting in remarkably different fill factors (FFs). The results reveal that PL(V) mirrors the current-voltage (JV) characteristics in the power-generating regime, which highlights an interesting correlation between radiative and non-radiative recombination losses. In particular, high FF devices show a rapid quenching of PL(V) from open-circuit to the maximum power point. We conclude that while the PL has to be maximized at VOC, at lower biases <VOC, the PL must be rapidly quenched as charges need to be extracted prior to recombination.
关键词： perovskite solar cells,radiative recombination,photoluminescence,open-circuit voltage,fill factor,non-radiative recombination
更新于2025-09-11 14:15:04
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Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon
摘要： The light load current-voltage characteristics of a solar photovoltaic module based on amorphous hydrogenated silicon have been studied at different temperatures under conditions of natural solar illumination (Рrad = 870 ± 10 W/m2). It has been found that the temperature dependence of the photocurrent has two slopes due to a change in the generation–recombination mechanism. The increase in the value of the short-circuit current with increasing temperature of the photovoltaic module is explained by a rise in the drift lengths of minority charge carriers due to an increase in the lifetime of minority carriers. In this case, the quasi Fermi level shifts to the conduction band, and the concentration of recombination centers decreases due to recharging of defective levels (D0 → D–). The decrease in the value of the open-circuit voltage with increasing temperature is explained by the exponential increase in the reverse saturation current and decrease in the band gap of the semiconductor. It has been found that the fill factor (FF) of the current–voltage characteristics decreases with increasing temperature, most likely due to a decrease in the shunt resistance (Rsh), which connects parallel to the p–n junction, consists of parasitic resistances, and leads to an increase in leakage currents. The temperature coefficient of the maximum output power has a positive value in the range of 320–332 K, i.e., increases with temperature. It has been revealed that the values of shunt and series resistance decrease with increasing temperature. A large loss of power output (up to 19%) has been observed on the series resistance of the solar photovoltaic module in the temperature range of 320–332 K. With increasing temperature, the loss of generated power on the shunt resistance grows sublinearly. The efficiency of the solar photovoltaic module decreases from 7.95 to 7.65% and has a coefficient of temperature dependence of efficiency, which decreases from ≈ –0.029%/K to ≈ –0.046%/K.
关键词： shunt resistance,series resistance,efficiency,temperature,open-circuit voltage,fill factor,solar photovoltaic module,amorphous hydrogenated silicon,short-circuit current
更新于2025-09-11 14:15:04
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Towards the large area HVCMOS demonstrator for ATLAS ITk
摘要： High Voltage CMOS (HVCMOS) sensor is a proposed cost effective alternative to the existing hybrid sensors in ATLAS ITk pixel barrel for outer layers. To prove the feasibility of HVCMOS sensors in ATLAS experiment, a large area demonstrator chip is being designed. This work presents the design details of three HVCMOS sensor chips with an overview of the measurement results of ATLASpix1 which is the first large area (1cm×2cm) prototype in 0.18μm process.
关键词： CLIC,ATLAS,Large fill factor,triggered readout,monolithic pixel detector,pixel grouping,HVCMOS,ATLASpix
更新于2025-09-10 09:29:36
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Fabrication of high fill-factor aspheric microlens array by dose-modulated lithography and low temperature thermal reflow
摘要： A cost-effective fabrication method for high quality and high fill-factor aspheric microlens arrays (MLAs) is developed. In this method, the complex shape of aspheric microlens is pre-modeled via dose modulation in a digital micromirror device (DMD) based maskless projection lithography system. Digital masks for several bottom layers are replaced from circle to hexagon for the purpose of enhancing the fill-factor of MLAs, then a low temperature thermal reflow process is conducted, after which the average surface roughness of microlens is improved to * 0.427 nm while the pre-modeled profile keeps unchanged. Experimental results show that the fabricated aspheric MLAs have almost 100% fill-factor, high shape accuracy and high surface quality. The presented method may provide a promising approach for rapidly fabricating high quality and high fill-factor aspheric microlens in a simple and low-cost way.
关键词： high fill-factor,dose-modulated lithography,aspheric microlens arrays,surface roughness,low temperature thermal reflow
更新于2025-09-04 15:30:14