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Quantum dot based mid-infrared photodetector enhanced by a hybrid metal-dielectric optical antenna
摘要： Surface plasmon waves and Rayleigh anomaly are characteristic optical phenomena exhibited by periodic subwavelength grating structures. In this paper, a hybrid metal-dielectric metasurface is proposed to improve the photoresponse of Ge/Si quantum dot infrared photodetectors (QDIPs) with the limited absorption layer thickness. The composite metasurface consists of a regular array of silicon pillars. The pillars protrude through subwavelength holes in a perforated gold ?lm on detector top. We demonstrate that by combining e?ects of dielectric and plasmonic metal components, the QDIP photoresponse can be signi?cantly improved compared to case when all-dielectric and metal gratings work alone. We observe about 4 times photoresponse enhancement with the hybrid metasurface device relative to a common plasmonic design with the two-dimensional metal hole array. Compared with a bare QDIP, the peak responsivity of the hybrid detector at a wavelength of 4.4 μm is increased by a factor of 15. The enhanced sensitivity is supposed to arise from coupling of the surface plasmon resonance and di?ractive e?ect related to the Rayleigh anomaly.
关键词： infrared photodetection,quantum dots,surface plasmons,enhancement,near-?eld
更新于2025-09-23 15:21:01
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Near-direct bandgap WSe <sub/>2</sub> /ReS <sub/>2</sub> type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics
摘要： PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current-rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct heterointerface bandgap for enhanced photogeneration in high light-absorbing few-layer vdW materials remains unexplored. In this work, for the first time, density functional theory calculations show that the heterointerface of few-layer group-6 transition metal dichalcogenide (TMD) WSe2 with group-7 ReS2 results in a sizeable (0.7 eV) near-direct type-II bandgap. The interlayer IR bandgap is confirmed through IR photodetection and micro-photoluminescence measurements demonstrate type-II alignment. Few-layer flakes exhibit ultrafast response time (5 μs) and high responsivity (3 A/W) and large photocurrent-generation and responsivity-enhancement at the hetero-overlap region (10-100×). Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 μA enable high output electrical power. Finally, long term air-stability and facile single contact metal fabrication process make the multi-functional few-layer WSe2/ReS2 heterostructure diode technologically promising for next-generation optoelectronics.
关键词： van der Waals heterostructure,pn heterojunction,ultrafast photodetection,near-direct bandgap,infrared photodetection,interlayer bandgap
更新于2025-09-23 15:19:57
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Interplay of charge transfer and disorder in optoelectronic response in Graphene/hBN/MoS<sub>2</sub> van der Waals heterostructures
摘要： Strong optoelectronic response in the binary van der Waals heterostructures of graphene and transition metal dichalcogenides (TMDCs) is an emerging route towards high-sensitivity light sensing. While the high sensitivity is an effect of photogating of graphene due to inter-layer transfer of photo-excited carriers, the impact of intrinisic defects, such as traps and mid-gap states in the chalcogen layer remain largely unexplored. Here we employ graphene/hBN (hexagonal boron nitride)/MoS2 (molybdenum disulphide) trilayer heterostructures to explore the photogating mechanism, where the hBN layer acts as interfacial barrier to tune the charge transfer timescale. We find two new features in the photoresponse: First, an unexpected positive component in photoconductance upon illumination at short times that preceeds the conventional negative photoconductance due to charge transfer, and second, a strong negative photoresponse at infrared wavelengths (up to 1720 nm) well-below the band gap of single layer MoS2. Detailed time and gate voltage-dependence of the photoconductance indicates optically-driven charging of trap states as possible origin of these observations. The responsivity of the trilayer structure in the infrared regime was found to be extremely large (> 108 A/W at 1550 nm using 20 mV source drain bias at 180 K temperature and ≈ ?30 V back gate voltage). Our experiment demonstrates that interface engineering in the optically sensitive van der Waals heterostructures may cast crucial insight onto both inter- and intra-layer charge reorganization processes in graphene/TMDC heterostructures.
关键词： defects and disorders in TMDCs,monolayer MoS2,phototransistor,graphene,infrared photodetection,Van der Waals heterostructures
更新于2025-09-23 15:19:57
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Fast Photoelectric Conversion in the Near‐Infrared Enabled by Plasmon‐Induced Hot‐Electron Transfer
摘要： Interfacial charge transfer is a fundamental and crucial process in photoelectric conversion. If charge transfer is not fast enough, carrier harvesting can compromise with competitive relaxation pathways, e.g., cooling, trapping, and recombination. Some of these processes can strongly affect the speed and efficiency of photoelectric conversion. In this work, it is elaborated that plasmon-induced hot-electron transfer (HET) from tungsten suboxide to graphene is a sufficiently fast process to prevent carrier cooling and trapping processes. A fast near-infrared detector empowered by HET is demonstrated, and the response time is three orders of magnitude faster than that based on common band-edge electron transfer. Moreover, HET can overcome the spectral limit of the bandgap of tungsten suboxide (≈2.8 eV) to extent the photo-response to the communication band of 1550 nm (≈0.8 eV). These results indicate that plasmon-induced HET is a new strategy for implementation of efficient and high-speed photoelectric devices.
关键词： localized surface plasmon resonance,infrared photodetection,photoelectric conversion,hot-electron transfer,graphene
更新于2025-09-11 14:15:04