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Surface plasmon resonance of naked gold nanoparticles for photodynamic inactivation of Escherichia coli
摘要： Although antimicrobial photothermal inactivation of naked gold nanostructures using powerful pulsed lasers has been previously studied, there are little reports about their photodynamic antimicrobial properties under the irradiation of low-power density continuous wave lasers. Therefore, this paper attempts to fill this gap. In this paper, we studied the effects of a 40-mW/cm2 continuous Nd:Yag laser at 532 nm and naked gold nanoparticles on inactivation of Escherichia coli ATCC25922. According to our results, 60 min illumination using the Nd:Yag laser caused a 0.15log reduction of the bacterial viability. Also, the employed gold nanoparticles with an average size of 15 nm were toxic to E. coli ATCC 25922 in the concentrations above 0.5 μg/ml. In addition, synergistic effects of 0.5 μg/ml gold nanoparticles and the light illumination led to a 2.43log reduction of the viability after a 60-min exposure and did not show any considerable temperature change on the media. The obtained results were justified based on the possible interaction mechanisms of low-power density laser lights and naked gold nanoparticles. The paper is proposed as a prelude for future research about localized inactivation of resistant pathogens with minimum side effects on neighbor tissues.
关键词： Photodynamic inactivation,Gold nanoparticles,Low-power density laser,Surface plasmon resonance
更新于2025-11-25 10:30:42
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Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
摘要： Inorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity and decreased the current density of the PeLEDs based on CsPbI3 quantum dots (QDs) and p-type Si substrate through an alternating current (AC) driving mode. For the different driving voltage modes (under a sine pulsed bias or square pulsed bias), a frequency-dependent electroluminescent (EL) behavior was observed. The devices under a square pulsed bias present a stronger EL intensity under the same voltage due to less thermal degradation at the interface. The red PeLEDs under a square pulsed bias driving demonstrate that the EL intensity drop-off phenomenon was further improved, and the integrated EL intensity shows the almost linear increase with the increasing driving voltage above 8.5 V. Additionally, compared to the direct current (DC) driving mode, the red PeLEDs under the AC condition exhibit higher operating stability, which is mainly due to the reducing accumulated charges in the devices. Our work provides an effective approach for obtaining strong brightness, low power consumption, and high stability light-emitting devices, which will exert a profound in?uence on coupling LEDs with household power supplies directly.
关键词： low power consumption,perovskite quantum dots,silicon,light emitting diodes,alternating current driving
更新于2025-11-21 11:01:37
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A Low-Power, Inductorless Wideband Cryogenic Amplifier For Supercondcting Nanowire Single Photon Detector
摘要： This paper presents a low-power, inductorless wideband cryogenic amplifier for superconducting nanowire single photon detector (SNSPD). To achieve wide bandwidth, low power consumption and small chip area, a modified Cherry-Hooper amplifier topology is used. With good input and output match, at 4.2 K temperature the measurement results show that the amplifier achieves 23-dB gain with a flat gain response, a 3-dB bandwidth (BW) of over 3.4 GHz, which covers frequencies as low as 130 kHz. Fabricated in a 0.13-μm silicon germanium (SiGe) BiCMOS technology, the amplifier core occupies a silicon area of only 0.075 mm2 and consumes a power of only 4 mW.
关键词： low power,Cryogenic amplifier,wideband,Superconducting Nanowire Single Photon Detectors,SNSPD
更新于2025-09-23 15:23:52
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Organic Field-Effect Transistor Based Ultrafast, Flexible, Physiological Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material.
摘要： Organic field-effect transistors (OFETs) with hexagonal barium titanate nanocrystals in amorphous matrix (h-BTNC) as one of the bilayer dielectric system have been fabricated on a highly flexible 10 μm thick polyethylene terephthalate (PET) substrates. The device current and mobility remains same upto a bending radius of 4mm that make it suitable for wearable e-skin applications. h-BTNC films found to be highly temperature sensitive and the OFETs designed based on this material showed ultra-precession (~4.3 mK), low power (~ 1μW at 1.2 V operating voltage), ultrafast response (~24 ms) in sensing temperature over a range from 20 °C to 45 °C continuously. The sensors are highly stable around body temperature and work at various extreme conditions, such as under water, solutions of different pH as well as of various salt concentrations. These properties make this sensor very unique and highly suitable for various healthcare and other applications, where in a small variation of temperature around this temperature range is required to be measured at an ultra-fast speed.
关键词： low power OFETs,electronic skin,temperature sensors,organic field-effect transistors,flexible sensors,healthcare sensors
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Biomedical Circuits and Systems Conference (BioCAS) - Cleveland, OH, USA (2018.10.17-2018.10.19)] 2018 IEEE Biomedical Circuits and Systems Conference (BioCAS) - A μRadio CMOS Device for Real-Time In-Tissue Monitoring of Human Organoids
摘要： Human-derived brain organoids were proposed for the generation of functional in vitro models and human brain tissues for drug-discovery, precision medicine and cell-based clinical therapies. However, their generation is currently subjected to a high variability which limits their routine exploitation. To achieve a quality-controlled production of brain organoids and to provide readout capabilities for assays development, we propose to realize active micro-scale devices that can be embedded into living 3D cell assemblies to provide in-tissue wireless sensing and monitoring of biosignals. Here, we evaluate a low-power solution that integrates into a 100μm×100μm area all circuits required for sensing and amplification of bioelectrical signals while providing RF wireless power delivery and data transmission. Circuit simulations on a 130nm RF-CMOS node demonstrate the feasibility of such solution with a 6.18μW of power consumption. Preliminary in vitro experiments with dummy Si micro-devices demonstrate their integration into 3D cell aggregates during cell culture.
关键词： CMOS,low-power,RF,Human brain organoids,wireless biosensing
更新于2025-09-23 15:23:52
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A Low Power and Fast Tracking Light-to-Frequency Converter with Adaptive Power Scaling for Blood SpO2 Sensing
摘要： This paper presents a monolithic low power and fast tracking light-to-frequency converter for blood SpO2 sensing. Normally, the tracking speed and the power consumption are two contradictory characteristics. However different gain-bandwidth specifications for various ambient light intensities allow the dynamically optimization of the power consumption according to the light intensity. In this paper, the amplifier power consumption is adaptively scaled by the generated light-intensity-positively-correlated control voltage. Thus, the chip total power consumption at low light intensity is significantly decreased. Moreover, the proposed adaptive power scaling is achieved with a continuous analog domain, which does not introduce extra switching noise. The proposed light-to-frequency sensor chip is fabricated by using 0.35 μm CMOS technology with a die area of 1 × 0.9 mm2. The measurement results show that the pulse light response for any light intensity is no longer than two new output square-wave cycles. The maximum total current consumption is 1.9 mA from a 3.3 V supply voltage, which can be adaptively scaled down to only 0.7 mA if the output frequency is about 25 KHz or lower. The minimum operational supply voltage of the proposed sensor chip is 2.5 V in the temperature range of -25 to 80 oC with 4 KV ESD level (HBM).
关键词： light-to-frequency converter,low power,fast tracking,blood oxygen,biomedical sensor
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Biomedical Circuits and Systems Conference (BioCAS) - Cleveland, OH, USA (2018.10.17-2018.10.19)] 2018 IEEE Biomedical Circuits and Systems Conference (BioCAS) - A Capsule Endoscope System for Wide Visualization Field and Location Tracking
摘要： A capsule endoscope system that can support wide visualization field and location tracking capability is proposed. The body channel communication (BCC) transceiver integrated circuit (IC) and 4-camera module is integrated in the proposed capsule endoscope. To support 4-camera image transmission, BCC transceiver provide high speed data rate with low-power. With cross-coupled camera module, 360-degree of image capturing is supported. For the accurate (sub-cm range) capsule localization, contact attenuation compensation scheme is proposed. The system is integrated on the rigid flexible printed circuit board (PCB) to reduce system form factor. The proposed endoscope system operates longer than 8 hours with 4fps and 12 hours with 2fps with conventional small size coin battery and verified through human mimicking phantom.
关键词： High data rate,Low-power,Capsule endoscope,Body channel communication (BCC),Localization,Location tracking,Transmitter,Wireless
更新于2025-09-23 15:23:52
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A Wake-Up Receiver With a Multi-Stage Self-Mixer and With Enhanced Sensitivity When Using an Interferer as Local Oscillator
摘要： An ultra-low power wake-up receiver with an energy-detection passive-RF architecture uses a multi-stage self-mixer that has a better conversion gain than the conventional envelope detector. The self-mixer, co-designed with the RF matching network, optimizes the sensitivity and minimizes the power consumption of the receiver. A wake-up receiver prototype in 0.13-μm CMOS operates at 550 MHz, consumes 220 nW from 0.5 V, and achieves a sensitivity of ?56.4 dBm at a 400-kb/s chip rate using an 11-bit wake-up code. When a large interferer is present, the receiver operates in an interferer-enhanced mode, leveraging the interferer as a local oscillator to improve the sensitivity; in the presence of a ?43.5-dBm interferer, a ?63.6-dBm sensitivity is achieved while consuming 1.1 μW.
关键词： self-mixer,wake-up receivers (WuRXs),wake-up radios,low-power wide-area network (LPWAN),Envelope-detectors,low-power wireless
更新于2025-09-23 15:22:29
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[IEEE 2018 Conference on Design and Architectures for Signal and Image Processing (DASIP) - Porto, Portugal (2018.10.10-2018.10.12)] 2018 Conference on Design and Architectures for Signal and Image Processing (DASIP) - Low Power Image Processing Applications on FPGAs Using Dynamic Voltage Scaling and Partial Reconfiguration
摘要： The TULIPP project aims to facilitate the development of embedded image processing systems with real-time and low-power constraints. In this paper, several adaptive dynamic runtime techniques for reconfigurable SoCs are described. These methods are used for low power image processing applications on high-performance embedded platforms. Dynamic voltage scaling and dynamic partial reconfiguration target the low-power requirements of the embedded systems while debugging supports the fast development on the hardware side of the system. The proposed techniques were tested and verified using an own developed custom SDSoC image processing library.
关键词： low power,FPGA,image processing,Debugging,Embedded systems,reconfigurable,real-time,Dynamic Voltage Scaling,Dynamic Partial Reconfiguration
更新于2025-09-23 15:22:29
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Negative Capacitance Black Phosphorus Transistors With Low SS
摘要： Negative capacitance (NC) shows great potential to enable transistors with the steeper slope, which is very useful for voltage/power applications. Black phosphorus (BP) is theoretically predicted as good channel materials for NC-FETs. However, the experimental demonstration of BP has so far remained elusive. Here, for the first time, NC transistors based on BP have been demonstrated. By connecting to a 20-nm HfZrO ferroelectric capacitor, both two types of BP transistors show lower subthreshold slope (SS). For 5-nm AlOx BP transistor, the SS decreases from 200 to 104 mV/dec. The experimental results are analyzed with the BP-NCFET model, and the calculated transfer curve can fit well with the experimental curve, which proves the validation of the model. Our work sheds light on using NC BP FETs for low-power flexible electronics applications.
关键词： low power,HfZrO,Black phosphorus (BP),subthreshold slope (SS),negative capacitance (NC)
更新于2025-09-23 15:22:29