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[Laser Institute of America ICALEO? 2014: 33rd International Congress on Laser Materials Processing, Laser Microprocessing and Nanomanufacturing - San Diego, California, USA (October 19–23, 2014)] International Congress on Applications of Lasers & Electro-Optics - High power 1030 nm YB-doped picosecond all fiber laser
摘要： A high power 1030 nm passively mode-locked ytterbium-doped picosecond fiber laser by master oscillator power amplifier (MOPA) configuration is demonstrated. The laser system consists of the picosecond seed and three stages of ytterbium-doped all-fiber amplifiers. The seed is mode-locked by a semiconductor saturable absorber mirror (SESAM), and a stable output is obtained with 30.7 ps pulse width, 29.0 MHz repetition rate, and 30 mW average output power. The laser operates at 1030.4 nm with a spectral width of 0.15 nm. After three stages of fiber amplification, the final output power is scaled up to 101 W in a 30/250 μm double-clad ytterbium doped fiber with the slope efficiency of 76.7%. The laser performance with the pulse width of 36.6 ps, pulse energy of 3.48 μJ, peak power as high as 97 kW operating at 1030.4 nm with bandwidth of 1.46 nm is achieved, and the beam quality M2 is 2.78.
关键词： passively mode-locked,master oscillator power amplifier,lasers,ytterbium-doped fiber
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Determination of the Residual Amplified Spontaneous Emission in Single-Mode Semiconductor Optical Amplifiers
摘要： The Master-Oscillator-Power-Amplifier (MOPA) is a laser light source best suited to provide high power, stable frequency, and narrow linewidth emission. In state-of-the-art MOPA systems, semiconductor optical amplifiers (SOAs) with single-mode lateral waveguides provide a compromise between the demands for high power on one side and excellent beam quality and small astigmatism of the optical mode on the other. The amplified spontaneous emission (ASE) in SOAs remains a limiting factor for the deployment of the MOPA systems in quantum technology applications. The presence of ASE reduces the carrier density and hence the device efficiency, increases the noise in the output signal, and adds incoherent background radiation that is critical, for example, for atom interferometry applications. It is therefore important to understand the dependence of the ASE on the design and operating conditions of an SOA in detail in order to develop SOAs optimized for applications that require spectrally very pure radiation. In this work, the coherent and the residual ASE power of ridge waveguide (RW) SOAs are experimentally determined as a function of the seed power (optical power at the input of the SOA) and the SOA current. The experiment provides essential information about the suppression of the ASE background and the saturation behaviour of the optical amplifier. The measurement setup is depicted in Fig. 1 (a). The seed laser (ECDL, TE-polarized at 871 nm) is operated far above its threshold to avoid amplification of the spontaneous emission of the seed laser by the SOA. An acousto-optic modulator (AOM) is used to set the seed power. The laser beam is then fed into the 6 mm long SOA. A non-polarizing beam splitter (BS) cube divides the output beam into two parts. One part (reference beam) is detected using a power meter (PM). The spectrum of the second part is recorded using an Advantest Q8347 optical spectrum analyser (OSA). The measured data is analysed using the correlation between optical power measured with the power meter and the optical spectrum. The ASE power is reconstructed from the remaining ASE (fitted) spectrum after removing the coherent part. Fig. 1(b) shows the measured total output, ASE and coherent powers retrieved from the spectrum as a function of the seed power. The measured quantities in Fig. 1(b) are compared to theoretical values which are calculated using a SOA model similarly as described in [2]. The carrier-density dependent spectra of the gain and the spontaneous emission are obtained from a microscopic model taking into account the waveguide structure [3]. The comparison shows good qualitative agreement between theory and measurement. We show how the experimental findings are used to validate and calibrate the model and how the model can be applied to compare the performance (coherent power, ASE background, saturation behaviour) of SOAs at different seed powers, injection current setting, different lengths or different lateral geometries.
关键词： ridge waveguide SOAs,semiconductor optical amplifiers,Master-Oscillator-Power-Amplifier,quantum technology applications,amplified spontaneous emission
更新于2025-09-12 10:27:22
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Monolithic Master Oscillator with Tapered Power Amplifier Diode Laser at 1060 nm with Additional Control Section for High Power Operation
摘要： State of the art diode laser light sources for high power operation with good beam quality are distributed Bragg reflector tapered diode lasers (DBR-TPLs). These devices deliver over 10 W of spectrally narrowband emission within an almost diffraction-limited beam [1]. However, due to the integration of the tapered section into the resonator, these devices are designed that only a forward traveling wave is optimal confined and amplified. This trade-off limits the potential of these devices. One way to overcome this limitation is to move the tapered section outside of the resonator and use as a single pass power amplifier in a monolithic master oscillator power amplifier (MOPA) layout [2]–[4]. However, the benefits on the emissions characteristics, as discussed below, of these devices can diminish if multi-cavity operation occurs. In this work, we present results on recently developed monolithic MOPAs for enhanced suppression of multi-cavity operation. The MOs in these devices are 2 mm long with a 7th order DBR grating at the front- and backside and a 0.75 mm long active section in the middle. An active 0.5 mm long control section (CON) follows the MO section. Both have a ridge waveguide (RW) width of 5 μm. The PA section is 3.5 mm long and defined by the tapered p-side contact with a full angle of 6°. The 3 different layouts are depicted in Fig. 1 a). In the first layout (top) all three section are in a straight line perpendicular to the front facet. The second layout (middle) has a MO section tilted by 4° and a bent CON section and the third layout (bottom) has bent CON section and a PA section tilted by 4°. Fig. 1 a) Sketch of all three monolithic MOPA layouts. b) Optical output power (solid lines) and the peak wavelength (dots) for three different monolithic MOPAs. The straight layout is used as reference to discuss the benefits of a bent control section and either a tilted MO or tilted PA on the emission characteristics of the devices. Furthermore the influence of the control section on the emission characteristics of the devices will be presented. This includes a comparison of the optical output power, the spectra and the beam quality factor of the devices. All devices provide over 6 W of optical output power at 1060 nm within a narrow spectral bandwidth below 17 pm (spectrometer resolution limit). However the overall emission characteristics have clear differences as can be seen in Fig. 1 b). Here the optical output power and the peak wavelength are plotted in dependence of the PA current. The laser with the tilted MO layout shows a small increase in output power compared to the straight layout and a reduction of spectral mode jumps for PA currents below IPA = 8 A. For the laser with the tilted PA layout the small spectral mode jumps due to multi-cavity operation are completely suppressed but the output power is reduced by 0.5 W.
关键词： MOPA,spectral bandwidth,diode laser,monolithic master oscillator power amplifier,high power operation,beam quality
更新于2025-09-11 14:15:04