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Introduction of Nitrogen Defects into a Graphitic Carbon Nitride Framework by Selenium Vapor Treatment for Enhanced Photocatalytic Hydrogen Production
摘要： Graphitic carbon nitride (g-C3N4) is a metal-free semiconductor photocatalyst that has attracted significant attention due to its promising application in photocatalytic hydrogen production. However, pristine g-C3N4 suffers from a high recombination rate of photo-generated charge carriers and also has a limited visible-light absorption range, resulting in low photocatalytic activity. Herein, we report on the preparation and testing of a g-C3N4 photocatalyst with tunable nitrogen defects that delivered improved photocatalytic activity. The nitrogen defects were gradually introduced into the g-C3N4 framework by a selenium vapor treatment of pure g-C3N4, which resulted in improved, stable catalytic activity for photocatalytic hydrogen production. Based on the experimental results and DFT calculations, we proposed that the enhanced photoactivity is attributed to the defect state (DS) formed by the nitrogen vacancy (VN) in the unit cell of g-C3N4 and a small widening of visible light absorption. This nitrogen-based photocatalyst with nitrogen deficiencies was found to deliver an average hydrogen generation rate of 1.16 mmolg-1h-1 at room temperature (25 oC), which was 3.4 times greater than pristine g-C3N4. This process of introducing nitrogen defects into the graphitic carbon provides a promising way for enhancing the photocatalytic activity of g-C3N4-based materials for hydrogen production.
关键词： nitrogen vacancies,photocatalytic hydrogen production,g-C3N4,bandgap
更新于2025-09-23 15:22:29
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Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire
摘要： In light of the necessity to anneal GaN to activate implanted dopants, the effects of the annealing temperature and time, the quality of the hydride vapor phase epitaxy grown GaN film, the quality of the annealing cap, and the effects of the stresses generated by the difference in the coefficients of thermal expansion of the film and the substrate are examined topographically using atomic force microscopy, and electrical measurements are made on Schottky diodes fabricated on the annealed samples. The results show that thermal decomposition begins at threading edge dislocations that form polygonized small angle grain boundaries during the annealing process; donor defects, probably nitrogen vacancies, are formed near the surface; and the donors are created more quickly when the annealing temperature is higher, the annealing time is longer, and the thermal stresses on the annealing cap are greater. The results suggest that the maximum annealing temperature is ～1300 °C, and at that annealing temperature, the annealing time should not exceed 4 min.
关键词： thermal decomposition,nitrogen vacancies,Schottky diodes,atomic force microscopy,GaN,annealing
更新于2025-09-11 14:15:04