High Power Laser‐Driven Ce ³⁺ ‐Doped Yttrium Aluminum Garnet Phosphor Incorporated Sapphire Disc for Outstanding White Light Conversion Efficiency

摘要： A facile synthesis method for the development of Y3 (cid:2) xAl5O12:xCe3t (0.03–0.24) yellow phosphor via an auto-combustion method and fabrication of phosphor-incorporated sapphire disc (PISD) of various dimensions is reported. The photoluminescence (PL) intensity for the optimized concentration of Ce3t-doped yttrium aluminum garnet (YAG) phosphor is recorded at 550 nm wavelength under the excitation wavelength of 445 nm from a high power blue laser diode. The developed PISD exhibits high stability and luminescence. The blue laser diode is a promising candidate to revolutionize the luminous intensity of the white light by several orders of magnitude as compared with the existing blue light-emitting diodes. This emerging technology has an extremely bright future with endless uses of tunable power of the laser that controls the intensity of the emitted white light. Hence, this new approach provides a paradigm shift to produce highly ef?cient white light based on PISD integrated with blue laser diode as compared with the conventional technology. Moreover, such con?gurations allow more styling and packaging ?exibility that reduces the overall size of the fabricated unit and makes it favorable for various lighting applications.