- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Interface Engineering by Thiazolium Iodide Passivation Towards Reduced Thermal Diffusion and Performance Improvement in Perovskite Solar Cells
摘要： Interface engineering has become one of the most facile and effective approaches to improve solar cells performance and its long-term stability and to retard unwanted side reactions. Three passivating agents are developed which can functionalize the surface and induce hydrophobicity, by employing substituted thiazolium iodide (TMI) for perovskite solar cells fabrication. The role of TMI interfacial layers in microstructure and electro-optical properties is assessed for structural as well as transient absorption measurements. TMI treatment resulted in VOC and fill factor enhancement by reducing possible recombination paths at the perovskite/hole selective interface and by reducing the shallow as well as deep traps. These in turn allow to achieve higher performance as compared to the pristine surface. Additionally, the TMI passivated perovskite layer considerably reduces CH3NH3 sion and degradation induced by humidity. The un-encapsulated perovskite solar cells employing TMI exhibit a remarkable stability under moisture levels (≈50% RH), retaining ≈95% of the initial photon current efficiency after 800 h of fabrication, paving the way towards a potential scalable endeavor.
关键词： charge transport,opto-electrical properties,perovskites solar cells,passivation,thin film photovoltaics
更新于2025-09-19 17:13:59
-
Photo-response in 2D metal chalcogenide-ferroelectric oxide heterostructure controlled by spontaneous polarization
摘要： The interplay between free and bound charges in two-dimensional (2D) semiconductor/ferroelectric oxide structures is responsible for the unique opto-electrical properties of these structures. In this study, we vertically combined the 2D layered semiconductors MoS2 (n-type) and WSe2 (p-type) with a ferroelectric oxide (PbTiO3) and found that a ferroelectric polarization induced accumulation or depletion in the layered materials. The heterostructures exhibited polarization-dependent charge distribution and pinched hysteresis. We show that polarization at the interface promoted e?cient charge separation of photo-generated carriers in the 2D layers. Optical control of electrical transport was e?ectively achieved in the MoS2 layers. This study potentially opens up new applications for semiconductor/ferroelectric systems in electronic devices.
关键词： opto-electrical properties,optical control,MoS2,2D semiconductor,ferroelectric oxide,PbTiO3,charge separation,WSe2
更新于2025-09-19 17:13:59
-
A remarkable effect of Pr doping on key optoelectrical properties of CdS thin films prepared using spray pyrolysis technique for high-performance photodetector applications
摘要： High-quality thin film-based photodetectors containing praseodymium doped cadmium sulfide (Pr:CdS) were fabricated through spray pyrolysis and studied for various opto-electrical applications. Field emission electron microscopy (FE-SEM) revealed that the prepared films were highly compacted with an extremely fine nanostructure without any pinhole or crack. X-ray diffraction and FT-Raman spectroscopy studies confirmed the single hexagonal phase of all the films. The crystallite size was found to lie between 19 and 32 nm. Optical spectroscopy revealed that the fabricated films have low absorbance and high transmittance (in range of 70–80%). The energy gap was found to lie in the range of 2.40–2.44 eV. The PL spectra contained an intense green emission band at ~531 ± 5 nm (2.33 eV), and its intensity was enhanced by increasing the Pr doping content in CdS. The dark and photo currents of CdS increased by approximately 950 and 42 times, respectively with the addition of 5.0 wt.% Pr. The responsivity (R) and specific detectivity (D*) were remarkably enhanced to 2.71 AW-1 and 6.9×1011 Jones, respectively, for the 5.0 wt.% Pr:CdS film. The external quantum efficiency (EQE) of 5 wt.% Pr:CdS films was 43 times that of pure CdS films, and the on/off ratio was 3.95 × 102 for 5.0 wt.% Pr:CdS film. Its high R, D*, and EQE values, and photo-switching behavior make Pr:CdS a good contender for high quality photodetector applications.
关键词： responsivity,external quantum efficiency,detectivity,CdS and Pr: CdS films,opto-electrical properties
更新于2025-09-19 17:13:59
-
Strategies to facilitate the formation of free standing MoS <sub/>2</sub> nanolayers on SiO <sub/>2</sub> surface by atomic layer deposition: A DFT study
摘要： In this study, we employ density functional theory calculations to investigate the very initial formation of a buffer layer during atomic layer deposition of MoS2 at the SiO2 (001) surface. In our previous study, we described that the self-limiting atomic layer deposition (ALD) reactions using Mo(NMe2)2(NtBu)2 as precursor and H2S as co-reagent terminate in the formation of a so-called building block on the SiO2 (001) surface. This building block consists of Mo which shares bonds with the surface O of SiO2 (001) at the bottom and terminal S at the top. Electronic band structure calculations indicate that the subsequently deposited buffer-layer that is composed of these building blocks has (opto)-electrical properties that are far from the ideal situation. Based on our studies, we propose alternative ALD chemistries which lead to the formation of a so-called underpinned building block. In this cluster, the Mo atoms are underpinned by S atoms, suppressing the formation of a buffer layer. This ultimately facilitates the formation of a free standing conformal 2D-MoS2 nanolayer at the interface. Through the proposed chemistries, the opto-electrical properties of the deposited layers will be preserved.
关键词： opto-electrical properties,MoS2,SiO2,density functional theory,atomic layer deposition
更新于2025-09-10 09:29:36