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High‐precision alignment procedures for patterning processes in solar cell production
摘要： We present two approaches for high-accuracy aligning of patterning processes with each other when fabricating solar cells. We introduce the approaches on the example of two different patterning processes of which one is adjustable (laser process) and one is not adjustable (screen-printing process). The basic idea is to measure the coordinates of the applied structures of each involved patterning process at discrete grid points with respect to a reference coordinate system. We chose the grid points such that they completely define the final cell pattern. Then, we adjust the grid point coordinates of one of the patterning processes (the laser process) according to the pattern of the other process (the screen-printing process). The laser then performs the patterning by connecting the corrected grid points with each other in the desired direction. We perform the associated high-precision measurement of the patterns' coordinates by using either a high-precision offline coordinate measuring machine or a high-resolution inline camera system with subsequent computer-based data processing. The latter inline method enables high throughput and is, in turn, of great interest for mass production of solar cells. In this paper, we demonstrate the alignment procedure approaches on “pPassDop” solar cells by adjusting a locally applied laser process to the directly following screen-printing step. This proof of principle includes both above-mentioned methods for coordinate determination in separate cell batches. Our innovative alignment procedures so far demonstrated the successful matching of 40-μm-wide screen-printed contact fingers to 70-μm-wide laser-processed lines over the entire area of 6-inch solar cells.
关键词： PERL,coordinate correction,silicon solar cells,patterning processes,selective emitter,PERC,bifacial,alignment,screen printing,pPassDop,laser
更新于2025-09-16 10:30:52
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Inline deposited PassDop layers for rear side passivation and contacting of p-type c-Si PERL solar cells with high bifaciality
摘要： We investigate stacks of aluminum oxide (Al2O3) and boron-doped silicon nitride (SiNX:B) layers for the rear side passivation and local doping of p-type silicon solar cell samples aiming for the realization of bifacial passivated emitter and rear locally diffused (biPERL) solar cells. The local p+-doped back surface field regions are formed by laser doping and are electrically contacted using commercially available screen-printed and fired silver-aluminum (AgAl) or silver (Ag) contacts. This approach is referred to as “pPassDop”. Laser doping results in highly-doped silicon with sheet resistances as low as 15 ?/sq and surface doping concentrations up to 6×1019 cm-3. Low specific contact resistances around 1 m? cm2 and 5 m? cm2 are measured for the screen-printed and fired AgAl and Ag contacts, respectively. In addition, the influence of each individual layer within the pPassDop layer stack on the doping properties is investigated. In order to separate the impact of aluminum and boron doping, firstly the influence of the Al2O3 layer thickness (0 nm, 4 nm, 6 nm) below the SiNX:B capping layer is studied. Secondly, a conventional undoped SiNX capping layer is applied on a 6 nm-thick Al2O3 layer. The roles of each dopant are studied by measuring the doping profile and contact resistivity.
关键词： SiNX:B,laser doping,bifacial PERL solar cells,pPassDop,Al2O3
更新于2025-09-12 10:27:22