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Ideal <i>pn</i> Diodes from Single-Walled Carbon Nanotubes for Use in Solar Cells: Beating the Detailed Balance Limit of Efficiency
摘要： Though many technologies exist for improving solar cell efficiencies, there remains an unexplored fundamental parameter, the diode ideality factor (??), that we can exploit. The Shockley-Queisser limit states that the maximum solar conversion efficiency in a single pn junction is achievable only when it is operated in the ideal diode limit of ?? = 1. Generation and recombination losses correlate directly to an increase in the dark saturation current and ??, both of which have competing effects on the open-circuit voltage. Here, we demonstrate a new approach to improving the efficiency of solar cells beyond the detailed balance limit by gate modulation of the diode’s ideality factor in ideal carbon nanotube pn diodes. We show that the open-circuit voltage can be tuned in direct proportion to ?? without impacting the reverse bias leakage current or the short circuit current. We show that our approach is similar to the enhancement from solar concentrators without actually using them. We achieve an open-circuit voltage that is ~300% higher than that given by the detailed balance limit.
关键词： pn junction,photovoltaic effect,open-circuit voltage,gate-tunable diodes,Single-walled carbon nanotube,detailed balance limit
更新于2025-09-16 10:30:52
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Photovoltaic effect on the microelectronic properties of perylene/p-Si heterojunction devices
摘要： This paper presents the fabrication and study of light dependent electrical properties of heterojunction device based on small molecular semiconductor 3, 4, 9, 10-perylene tetracarboxylic anhydride (PTCDA). The Ag/PTCDA/P3HT/p-Si heterojunction device is prepared by spin coating a 20 nm layer of poly-3,hexylthiophene (P3HT) on p-Si followed by 80 nm thick film of PTCDA via thermal deposition. Current–voltage (I–V) properties of the device are measured at room temperature in dark condition ~ 20 lx (lx) and different illumination conditions to probe photovoltaic effects on the microelectronic parameters of the device. In dark, the Ag/PTCDA/P3HT/p-Si device exhibited rectifying behavior in the forward bias with a current rectification ratio (RR) of 1990 at ± 3.5 V that confirmed the formation of depletion region. Key microelectronic parameters of the device such as ideality factor (n), barrier height (φb), series resistance (Rs) and shunt resistance (Rsh) are extracted from the I–V characteristics and studied as a function of illumination (2–2700 lx). Charge conduction mechanism and mobility via interface of the device is also investigated from logI–logV curves and conventional I–V characteristics, respectively. The microelectronic properties of the device are correlated with optical properties (absorption spectrum) and morphology of the PTCDA thin films carried out by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transformed infrared (FTIR) spectrum and energy dispersive x-rays (EDX) is performed to validate composition and elemental analysis of PTCDA films.
关键词： PTCDA,photovoltaic effect,p-Si,heterojunction,perylene,microelectronic properties
更新于2025-09-16 10:30:52
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Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
摘要： The use of ultra-wide bandgap transparent conducting beta gallium oxide (b-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the ShockleyeQueisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
关键词： Bulk photovoltaic effect,Pb(Zr,Ti)O3,Solar cell architecture,Ferroelectric photovoltaics,Ga2O3,Gallium oxide,Transparent conducting oxide,Ultra-wide bandgap semiconductors
更新于2025-09-16 10:30:52
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Exploiting Bulk Photovoltaic Effect in a 2D Trilayered Hybrid Ferroelectric for Highly Sensitive Polarized Light Detection
摘要： Polarized light detection is attracting increasing attention for its wide applications ranging from optical switches to high-resolution photodetectors. Two-dimensional (2D) hybrid perovskite-type ferroelectrics combining inherent light polarization dependence of bulk photovoltaic effect (BPVE) with their excellent semiconducting performances present significant potential in this portfolio. Here, we first report the BPVE-driven highly sensitive polarized light detection in a 2D trilayered hybrid perovskite ferroelectric, (allyammonium)2(ethylammonium)2Pb3Br10 (1), which shows superior BPVE with a near-bandgap photovoltage of ~ 2.5 V and a high on/off switching ratio of current (~ 104). Notably, driven by the superior BPVE, 1 exhibits highly sensitive polarized light detection with a polarization ratio as high as ~15, which is far more beyond than those of structural anisotropy-based monocomponent devices. As far as we know, this is the first realization of BPVE-driven polarized light detection in hybrid perovskite ferroelectrics. This work opens a new avenue for the design of highly sensitive polarized light detection by exploiting the sinusoidal behavior of BPVE current in 2D multilayered hybrid perovskite ferroelectrics.
关键词： Ferroelectric photovoltaic,Two-dimensional hybrid perovskite,Polarization-sensitive photodetection,Bulk photovoltaic effect,Ferroelectric material
更新于2025-09-12 10:27:22
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Exploiting Bulk Photovoltaic Effect in a 2D Trilayered Hybrid Ferroelectric for Highly Sensitive Polarized Light Detection
摘要： Polarized light detection is attracting increasing attention for its wide applications ranging from optical switches to high-resolution photodetectors. Two-dimensional (2D) hybrid perovskite-type ferroelectrics combining inherent light polarization dependence of bulk photovoltaic effect (BPVE) with their excellent semiconducting performances present significant potential in this portfolio. Here, we first report the BPVE-driven highly sensitive polarized light detection in a 2D trilayered hybrid perovskite ferroelectric, (allyammonium)2(ethylammonium)2Pb3Br10 (1), which shows superior BPVE with a near-bandgap photovoltage of ~ 2.5 V and a high on/off switching ratio of current (~ 104). Notably, driven by the superior BPVE, 1 exhibits highly sensitive polarized light detection with a polarization ratio as high as ~15, which is far more beyond than those of structural anisotropy-based monocomponent devices. As far as we know, this is the first realization of BPVE-driven polarized light detection in hybrid perovskite ferroelectrics. This work opens a new avenue for the design of highly sensitive polarized light detection by exploiting the sinusoidal behavior of BPVE current in 2D multilayered hybrid perovskite ferroelectrics.
关键词： Ferroelectric photovoltaic,Two-dimensional hybrid perovskite,Polarization-sensitive photodetection,Bulk photovoltaic effect,Ferroelectric material
更新于2025-09-12 10:27:22
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Temperature Dependence of InGaN / GaN Multiple Quantum Well Solar Cells
摘要： Elements based on nitride family and more specifically, those of the GaN/InGaN family, present a great interest for renewable energy conversion systems as they offer huge potentialities in photovoltaic applications, as example for the realization of concentration solar cells. This interest is linked to the possibility to enlarge the part of the solar energetic spectrum that a solar cell is able to capture thanks to the possibilities of growing multilayers cells with various band-gap and thus, with various absorption bands. In this paper, the performance of InGaN/GaN multiple quantum well MQW solar cells with respect to the N-polar orientation. is investigated .In order to obtain the exact conversion efficiency, the temperature effect as well as the spontaneous and piezoelectric polarization effect are taking into consideration in model. The results reveal that the increase of temperature decreases significantly the MQW solar cell efficiency. Our results and discussion would be helpful in designing and fabricating high efficiency InGaN/GaN solar cell in experiment.
关键词： InGaN/GaN solar cells,Polarization,Conversion efficiency,Photovoltaic effect,Temperature
更新于2025-09-12 10:27:22
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Interfacial Engineering in Functional Materials for Dye‐Sensitized Solar Cells || Dye‐Sensitized Solar Cells: History, Components, Configuration, and Working Principle
摘要： The ever-growing human population requires the consumption of energy in various forms, and therefore researchers in energy field focus on energy harvesting from various sources. The nonrenewable energy sources such as fossil fuels are running out, which cannot be replenished in our life time. The nonrenewable energy sources are carbon-based fossil fuels such as coal, petroleum, and natural gas that emits greenhouse gases (for example carbon dioxide) that cause global warming, a serious threat to the world and mankind. At present, worldwide around three-fourth of the electricity is obtained from the nonrenewable sources that cannot be reused or recycled [1]. Many countries such as Japan, China, France, Ukraine, and India depend on nuclear power stations for the production of electricity and also they are facing several harmful issues from these power plants that lead to environmental pollution [2]. Therefore, the focus of scientists mainly rely on the renewable energy-based energy conversion devices. Solar, wind, hydroelectric, biomass, and geothermal are some of the examples of renewable energy resources available in our earth. Of these, solar energy is an important source of renewable energy, which is available throughout a day all over the year, basically inexhaustible in nature. In case of solar energy, radiation obtained from the sunlight is capable of producing heat and light, causes photochemical reactions, and generates electricity. As the electricity becomes a first and foremost basic need for the mankind, this impressive energy source can be utilized for the conversion of solar to electrical energy using solar cell technology. The strength of solar energy is magnanimous as it provides us about 10 000 times more energy that is higher than the world’s daily need of energy consumption [1]. The earth receives such a huge amount of energy every day, we are fortunate to harness it using suitable solar cell technologies. Regrettably, though solar energy is free of cost, the highly expensive technologies required for its conversion and storage which limit the technology to reach the wider community.
关键词： Dye-Sensitized Solar Cells,photoanode,TiO2,solar energy,dyes,photovoltaic effect,DSSCs,counter electrode,renewable energy,electrolytes
更新于2025-09-12 10:27:22
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Strong bulk photovoltaic effect in chiral crystals in the visible spectrum
摘要： Structurally chiral materials hosting multifold fermions with large topological number have attracted considerable attention because of their naturally long surface Fermi arcs and bulk quantized circular photogalvanic effect (CPGE). Multifold fermions only appear in metallic states, and therefore most studies so far have only focused on the semimetals in compounds with chiral crystal structures. In this work, we show that the structurally chiral topological trivial insulators are also exotic states, which is interesting from the application point of view, owing to their natural advantage to host a large bulk photovoltaic effect in the visible wavelength region. In recent decades, the shift current in the visible wavelength region was limited to be 10 μA/V2 in all the experimentally measured reports. By scanning the insulators with chiral structure, we found a class of compounds with photoconductivity ranging from ～20 to ～80 μA/V2, which is comparable to the largest reported shift current. This work illustrates that the compounds with chiral structure can host both quantum CPGE and a strong shift current in the second-order optical response. Moreover, this work offers a good platform for the study of the shift current and its future application by putting the focus on insulators with chiral lattices, so far overlooked in photovoltaic technologies.
关键词： photoconductivity,chiral crystals,shift current,bulk photovoltaic effect,visible spectrum
更新于2025-09-12 10:27:22
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In-situ stress modulated ferroelectric photovoltaic effect in cluster-assembled TbFe <sub/>2</sub> /Bi <sub/>5</sub> Ti <sub/>3</sub> FeO <sub/>15</sub> heterostructural films
摘要： TbFe2/Bi5Ti3FeO15 heterostructural ?lms were prepared by inserting cluster-assembled TbFe2 microdiscs into a Bi5Ti3FeO15 matrix using low energy cluster beam deposition combined with sol-gel methods. The phase structure, ferroelectric properties, bandgap, photovoltaic spectral response, and performances of the ferroelectric photovoltaic effect were modulated by the in situ stress driven by magnetostriction of TbFe2 clusters under external magnetic ?elds. The short-circuit current, open-circuit voltage, and power conversation ef?cient increase with the in situ stress, reaching 0.026 mA/cm2, 9.5 V, and 5.88 (cid:2) 10(cid:3)2%, respectively, under a maximum in-stress of 0.075 GPa. So the high open-circuit voltage above bandgap is attributed to the distinct bandgap shifting and the effective separation of photogenerated electron-hole pairs derived from the in situ stress induced large built-in ?eld. The in situ stress dominated symmetry breaking contributes to the improvement of the power conversation coef?cient. The in situ dynamic internal stress provides a high ef?cient approach to modulate and improve ferroelectric photovoltaic effects.
关键词： magnetostriction,in situ stress,ferroelectric photovoltaic effect,bandgap shifting,TbFe2/Bi5Ti3FeO15 heterostructural films
更新于2025-09-12 10:27:22
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High efficient photovoltaics in BaTiO<sub>3</sub> thin film
摘要： BaTiO3 thin film was grown on a n-type silicon (100) single crystal substrate by high vacuum magnetron sputtering. The samples were annealed under vacuum conditions at 400, 500 and 600°C, respectively. The photovoltaic effect in BaTiO3 thin film was observed, and a high power conversion efficiency of 1.25% was achieved. In addition, the short circuit current density of 134μA/cm2 under white light illumination was obtained in the BaTiO3 thin film. Besides, the current ratio of light ON/OFF state is about 100 at 2v bias. Our experiments suggest that BaTiO3 thin film possesses the potential photovoltaic application in future.
关键词： photovoltaic effect,BaTiO3 thin film,power conversion efficiency
更新于2025-09-11 14:15:04