A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated with Metal Oxide TFTs

摘要： This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors (TFTs). In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a voltage gain (Av) of 29.54 dB over a 3 dB bandwidth (BW) of 9.33 kHz at a supply voltage of 15 V. The unity-gain frequency, phase margin and DC power consumption (PDC) are 180.2 kHz, 21.5°PM and 5.07 mW, respectively.