Efficient Quasi-Two-Dimensional Perovskite Light-Emitting Diodes with Improved Multiple Quantum Well Structure

摘要： Quasi-two-dimensional (quasi-2D) perovskites with a multiple quantum well structure can enhance the exciton binding energy and controllable quantum con?ne e?ect, which are attractive materials for e?cient perovskite light-emitting diodes (PeLEDs). However, the multiphase mixtures contained in these materials would cause nonradiative recombination at the perovskite ?lm surface. Here, a facile solution surface treatment is adopted to improve the multiple quantum well structure of the quasi-2D perovskite emitting layer, which can reduce the in?uence of defectinduced nonradiative recombination and the electric-?eld-induced dissociation of excitons for the PeLEDs. The improved multiple quantum well structure is veri?ed by UV absorption spectra and temperature-dependent photoluminescence spectra measurements. The photoluminescence quantum yield of the quasi-2D perovskite ?lm with surface treatment has been approximately increased by 200%. Meanwhile, the electroluminescence device achieves a current e?ciency of 45.9 cd/A.