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Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells
摘要： An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is proposed. The advantage of using a convex quantum wells structure is that the radiation recombination is significantly improved. The improvement is attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which results in an increased hole injection efficiency and a decreased electron leakage into the p-type region. Particularly, comparisons with the convex quantum barriers structure and the reference structure show that the convex quantum wells structure has the best performance in all respects.
关键词： AlGaN,radiation recombination,convex quantum wells,electron leakage,deep ultraviolet laser diode,hole injection efficiency
更新于2025-09-23 15:19:57
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[IEEE 2019 8th International Symposium on Next Generation Electronics (ISNE) - Zhengzhou, China (2019.10.9-2019.10.10)] 2019 8th International Symposium on Next Generation Electronics (ISNE) - Structural optimization of 273nm deep ultraviolet laser in wave guide
摘要： The full width at half maxima (FWHM) of the LDs is very narrow, with small threshold current and high luminous power. Through simulation, it can be seen that the radiation recombination rate and wave intensity of different lateral positions of LDs are different. The waveguide layer of the high Al composition has a lower refractive index and can reduce the divergence angle of light. In this paper, the device structure is optimized by gradually increasing the Al component toward the p-cladding layer and decreasing the Al component toward p-side. Compared with the original structure, the grading wave guide proves that it can have better electrical characteristics and the FWHM is smaller.
关键词： grading wave guide,wave intensity,radiation recombination,FWHM
更新于2025-09-16 10:30:52