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Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors
摘要： The temperature and electrical modes influences on radiation sensitivity of n-channel MISFETs sensors of the total ionizing dose were investigated. There were measured the MISFET-based dosimeter output voltages V as function of the radiation doses D at const values of the drain current IDand the drain–source voltage VD, as well as the (ID–VG) characteristics before, during and after irradiations at different temperatures T (VGis the gate voltage). It was shown how the conversion function V(D) and the radiation sensitivity SD are depending on the temperature T for different electrical modes. To interpret experimental data there were proposed the models taking into account the separate contributions of charges in the dielectric Qt and in SiO2–Si interface Qs. The model’s parameters ΔVt(D,T) and ΔVs(D,T) were calculated using the experimental ID–VG characteristics. These models can be used to predict performances of MISFET-based devices.
关键词： electrical modes,ionizing dose sensors,radiation sensitivity,temperature,MISFET
更新于2025-09-19 17:15:36
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Chemo-treated 4T1 breast cancer cells radiation response measured by single and multiple cell ionization using infrared laser trap
摘要： We present a study that uses a laser trapping technique for measurement of radiation sensitivity of untreated and chemo-treated cancer cells. We used a human mammary tumor cell line (4T1) treated by an antitumor compound, 2-Dodecyl-6-methoxycyclohexa-2, 5-diene-1,4-dione (DMDD), which was extracted from the root of Averrhoa carambola L. The untreated control group, and both 2-hour and 24-hour treated groups of 4T1 cells were used in this study. The absorbed threshold ionization energy (TIE) and the threshold radiation dose (TRD) were determined using a high-power infrared laser (at 1064 nm) trap by single and multiple cells trapping and ionization. The results were analyzed using descriptive and t-statistics. The relation of the TIE and TRD to the mass of the individual cells were also analyzed for different hours of treatment in comparison with the control group. Both TIE and TRD decrease with increasing treatment periods. However, the TRD decreases with mass regardless of the treatment. Analyses of the TRD for single vs multiple cells ionizations within each group have also consistently showed this same behavior regardless of the treatment. The underlying factors for these observed relations are explained in terms of radiation, hyperthermia, and chemo effects.
关键词： threshold ionization energy,chemo-treated cancer cells,threshold radiation dose,4T1 breast cancer cells,laser trapping technique,DMDD,radiation sensitivity
更新于2025-09-11 14:15:04
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The 0D Cs2TeI6 Perovskite: Solution Processed Thick Films with High X-Ray Sensitivity
摘要： We demonstrate a potential candidate the 0-D “all-inorganic” perovskite material Cs2TeI6 as a sensitive all-inorganic X-ray photoconductor for the development of the new generation of direct photon-to-current conversion flat panel X-Ray imagers. Cs2TeI6 consists of high atomic number elements, has high electrical resistance and exhibits high air and moisture stability making it suitable as a sensitive X-ray photoconductor. In addition, we identify that Cs2TeI6 film can be prepared under low temperature process using electrostatic assisted spray technique at atmospheric condition and achieved the resistivity of 4.2×1010 Ω·cm. The resulting air and water-stable Cs2TeI6 device exhibits strong photoresponse to X-ray radiation. An electron drift length on the order of 200 μm is estimated under an applied electrical field strength of 400 V·cm-1. A high sensitivity for Cs2TeI6 thick film device is realized, with the value of 192 nC·R-1cm-2 under 40 kVp X-rays at an electrical field of 250 V·cm-1, which is about 20 times higher than that of the hybrid 3D perovskite polycrystalline film X-ray detectors. X-ray imaging based on Cs2TeI6 perovskite films will require lower radiation doses in many medical and security check applications.
关键词： hard radiation,sensitivity,thick film,perovskite,Cs2TeI6,electrostatic spray
更新于2025-09-04 15:30:14