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Defect Formation in Ion-Implanted Si - Approach to Controlled Semiconductor Optical Properties
摘要： For specific modification of the fundamental optical and photoelectrical properties of silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses of 1 х 1013 cm-2–1 х 1015 cm-2 followed by annealing at 900 °C and 1000 °C (20 min). The IR reflection spectra, Raman spectroscopy and scanning electron microscopy data have been compared with the photosensitivity spectra (1.4–2.2 μm) and with the integrated photoresponse in the IR (1.0–4.1 μm) and UV (0.25–0.4 μm) regions. These studies allow for materials engineering to obtain new data on the influence of defect formation on the optical properties of the material and to evaluate the technological conditions for practical application of the modified material.
关键词： Boron ion implanted silicon,IR and UV photosensitivity,IR reflection spectra,p-n structures,extended defects,Raman-spectroscopy
更新于2025-09-16 10:30:52
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Reflection Spectra of Composite Photonic Crystals Based on Anodic Alumina Filled with Ferroelectric Sodium Nitrite
摘要： Re?ection spectra of a composite one-dimensional photonic crystal (PC) based on porous anodic alumina ?lled with ferroelectric sodium nitrite have been recorded in the wavelength range of 400 to 1200 nm. Signi?cant spectral shifts of the ?rst and second stopbands are revealed for the composite PC. The stopband spectral half-width is found to decrease by a factor of four to ?ve. The possibility of applying composite alumina-based photonic crystals as selective narrowband mirrors is discussed.
关键词： reflection spectra,ferroelectric sodium nitrite,photonic crystals,anodic alumina,stopbands
更新于2025-09-12 10:27:22