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Magnetoa??optical specifications of Rosena??Morse quantum dot with screw dislocation
摘要： This is the first study to consider a quantum dot with screw dislocation that has Rosen-Morse (RM) confinement potential, generated by a GaAs/GaAlAs heterostructure. An external magnetic field and Aharonov-Bohm (AB) flux field were also applied on RM quantum dot (RMQD) in order to stave the effects of a screw dislocation defect. The combined effect of the screw dislocation defect, the external magnetic field, and AB flux field on the total refractive index changes (TRICs) and the total absorption coefficients (TACs) of RMQD are thus investigated. Cylindrical coordinates are used due to the direction of application of the torsion and the external fields, as well as due to the structure's symmetry. The effective mass approximation and tridiagonal matrix methods are used in order to obtain the subband energy spectra and electronic wave functions of RMQD. The nonlinear optical specifications of RMQD are checked using compact-density-matrix formalism within the framework of the iterative method. Reviews without screw dislocation are also carried out in order to be able to clarify the effects of a screw dislocation defect on the optical properties, and then, both cases are deliberated. This study is the first attempt to analyze the AB flux field for RMQD without screw dislocation. In the present study, the influences of a screw dislocation defect on RMQD's TRICs and TACs are probed by considering different values of the external magnetic field and AB flux field, and the ranges of corresponding parameters on the optimum of the structure are specified. Moreover, the study also elucidates how to rule out the effects of screw dislocation on optical specifications by means of the external fields. Despite a certain screw dislocation, the frequency range is determined where the structure behaves as if it is perfect (namely, without screw dislocation) for its optimum, which in turn is crucial for experimental applications.
关键词： quantum dot,magnetic field,screw dislocation,Aharonov-Bohm flux field,nonlinear optical properties
更新于2025-09-23 15:19:57
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Rational Control of WSe<sub>2</sub> Layer Number via Hydrogen-Controlled Chemical Vapor Deposition
摘要： Transition metal dichalcogenides are a promising family of materials for electronics and optoelectronics, in part due to their range of bandgaps that can be modulated by layer number. Here, we show that WSe2 can be selectively grown with one, two, or three layers, as regulated by a one-step hydrogen-controlled chemical vapor deposition (H-CVD) process involving cyclical pulses of H2 flow. The physical and vibrational properties of the resulting mono-, bi-, and tri-layer WSe2 films are characterized by atomic force microscopy and Raman spectroscopy. Modifying the H-CVD process to include more than three H2 pulses results in thicker WSe2 films, however the thickness of these films is not well controlled and feature small, bulk-like pyramidal islands. Transmission electron microscopy analysis reveals that most of these islands exhibit a spiral structure and appear to be grown via screw-dislocation-driven growth, similar to other works. Therefore, the H-CVD process is demonstrated to be a powerful tool for controlling the layer thickness of WSe2, but its practicality is limited to the few-layer regime.
关键词： Chemical vapor deposition,Transition metal dichalcogenides,Screw-dislocation-driven growth
更新于2025-09-23 15:19:57
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Propagation Property of an Astigmatic sin–Gaussian Beam in a Strongly Nonlocal Nonlinear Media
摘要： Based on the Snyder and Mitchell model, a closed-form propagation expression of astigmatic sin-Gaussian beams through strongly nonlocal nonlinear media (SNNM) is derived. The evolutions of the intensity distributions and the corresponding wave front dislocations are discussed analytically and numerically. It is generally proved that the light field distribution varies periodically with the propagation distance. Furthermore, it is demonstrated that the astigmatism and edge dislocation nested in the initial sin-Gaussian beams greatly influence the pattern configurations and phase singularities during propagation. In particular, it is found that, when the beam parameters are properly selected, a vortex beam with perfect doughnut-shaped profile can be obtained for astigmatic sin-Gaussian beams with two-lobe pattern propagating in SNNM.
关键词： nonlocal nonlinear medium,screw dislocation,vortex,astigmatic sin–Gaussian beam,edge dislocation
更新于2025-09-19 17:15:36
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Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC
摘要： We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm2/V·s and 3.23 × 1013 cm?2, respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.
关键词： MOCVD,2DEG,Mobility,AlGaN/GaN HEMT,Carrier Density,Edge and Screw Dislocation
更新于2025-09-19 17:15:36