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Rhenium Diselenide (ReSe <sub/>2</sub> ) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique
摘要： In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9–1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm?2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W?1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices.
关键词： photodetector,transition-metal dichalcogenides (TMDs),p-doping,selective doping,HCl doping,ReSe2,transistor
更新于2025-09-11 14:15:04
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Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion
摘要： Advanced selective doping provides effective tool for nanoscale engineering of potential barriers and photoelectron processes in quantum well (QW) and quantum dot (QD) optoelectronic nanomaterials for IR sensing and wide band photovoltaic conversion. Photoelectron kinetics and device characteristics are theoretically and experimentally investigated. Asymmetrical doping of QWs is employed in a double QW structure for tuning electron transitions in QWs by voltage bias. These QW devices demonstrate bias-tunable multi-color detection and capability of remote temperature sensing. The QD structures with bipolar doping are proposed to independently control photocarrier lifetime (photocurrent) and dark current. The bipolar doping allows us to increase the height of nanoscale potential barriers around QDs without changing the electron population in QDs, which determines dark current. The QD devices with bipolar doping demonstrate significant enhancement of photocurrent, while dark current is close to that in corresponding reference devices with unipolar doping.
关键词： quantum well,photovoltaic conversion,IR sensing,selective doping,quantum dot
更新于2025-09-04 15:30:14