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Breaking symmetry in device design for self-driven two-dimensional materials based photodetectors
摘要： The advent of graphene and other two-dimensional (2D) materials offers great potential for optoelectronics applications. Various device structures and novel mechanisms have been proposed to realize photodetectors with unique detecting properties. In this minireview, we focus on the self-driven photodetector that has great potential for low-power or even powerless operation required in the internet of things and wearable electronics. To address the general principle of the self-driven properties, we propose and elaborate the concept of symmetry breaking in 2D materials based self-driven photodetectors. We discuss various mechanisms of breaking symmetry for self-driven photodetectors, including asymmetrical contact engineering, field-induced asymmetry, PN homojunction, and PN heterostructure. Typical device examples based on these mechanisms are reviewed and compared. The performance of current self-driven photodetectors is critically assessed and future directions are discussed towards the target application fields.
关键词： symmetry breaking,2D material,self-driven photodetector
更新于2025-09-19 17:13:59
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GaSe/MoS <sub/>2</sub> Heterostructure with Ohmica??Contact Electrodes for Fast, Broadband Photoresponse, and Selfa??Driven Photodetectors
摘要： In this letter, the vertically-stacked GaSe/MoS2 heterostructures with indium tin oxide (ITO) and Ni/Au as contact electrodes are successfully fabricated, respectively. The GaSe/MoS2 heterostructure exhibits a broadband photoresponse covering the range of visible to near-infrared spectra at room temperature without external bias voltage. When ITO serves as contact electrodes, a high rectification ratio, i.e., 1.5 × 104 at VDS = ±1 V, and an excellent photoelectric performance, i.e., responsivity of ≈0.67 A W-1, specific detectivity of ≈2.3 × 1011 cm Hz1/2 W-1 and external quantum efficiency of ≈160% at the wavelength of 520 nm is achieved. Moreover, the GaSe/MoS2 heterostructure with Ohmic-contact ITO electrodes demonstrates a faster response time of 155 μs, which is 4 times faster than the GaSe/MoS2 heterostructure with Ni/Au electrodes and about 300 times faster than previous reports. These results reveal the presence of an abrupt p–n junction between GaSe and MoS2 and significant role of electrode-contact mode in determining the photoelectric properties of GaSe/MoS2 heterostructure.
关键词： photoresponse,GaSe/MoS2 heterostructure,self-driven photodetector,Ohmic-contact
更新于2025-09-16 10:30:52