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Comprehensive characterization of CIGS absorber layers grown by one-step sputtering process
摘要： We have demonstrated that the use of a one-step sputtering process allowed for the fabrication of copper indium gallium diselenide (CIGS) thin films by RF magnetron sputtering without an additional selenization process. The CIGS thin films deposited at different substrate temperatures were synthesized on soda-lime glass (SLG) substrates using a single quaternary CIGS target. The film composition ratios of ([Cu]/[In]+[Ga]), ([Ga]/[In]+[Ga]), and ([Se]/[Cu]+[In]+[Ga]) were almost consistent with those of the sputtering target. X-ray diffraction (XRD) and Raman results showed that the crystallinity of the CIGS thin films was gradually improved as substrate temperatures increased. Transmission electron microscopy (TEM) showed that the films grown at 600 °C have a columnar structure with the grain size of ~100 nm. In addition, for the CIGS films grown at 600 °C, TEM-EDX analysis revealed that the synchronized fluctuation of the Cu and Se signals was observed in the direction of the film depth, while the In and Ga signals were constant. As a result, the CIGS solar cell made using the film showed a degraded cell efficiency of 2.5%, which might be have been caused by not only Cu-rich and Se-poor compositions but the locally unstable composition in the CIGS films fabricated by one-step sputtering.
关键词： CIGS,Compound semiconductor,One-step sputtering,Quaternary single target
更新于2025-09-23 15:21:01
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Effect of working pressure on the properties of RF sputtered SnS thin films and photovoltaic performance of SnS-based solar cells
摘要： Tin sulfide (SnS) thin films were deposited with a single SnS target by radio frequency magnetron sputtering while varying the working pressure (0.6 Pa to 2.6 Pa), and the structural, chemical, electricelectrical and optical properties of the SnS thin films were investigated. X-ray diffraction results showed that all the SnS thin films had a (111) plane preferred growth orientation, and X-ray photoelectron spectroscopy verified that a SnS thin film was grown with an orthorhombic crystal structure, having the binding energy of 324.5 eV. Due to a long wavelength shift in the transmittance spectrum, the optical band gap decreased from 1.56 eV to 1.47 eV. A SnS-based conventional structure solar cell (Al/ITO/i-ZnO/CdS/SnS/Mo/SLG), prepared with a SnS absorption layer and deposited at a working pressure of 2.0 Pa, achieves the highest power conversion efficiency of 0.58%. It is confirmed that this result reveal to very high efficiency compared to other reports with conventional structure.
关键词： thin films,Tin sulfide,radio frequency magnetron sputtering,single target,SnS based solar cells,working pressure
更新于2025-09-19 17:13:59
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10% efficiency Cu(In,Ga)Se2 solar cell with strongly (220)/(204) oriented Cu-poor absorber layers sputtered using single quaternary target
摘要： Cu-poor CIGS thin films were fabricated by RF magnetron sputtering from a single quaternary target with the composition of Cu0.7In0.7Ga0.3Se2, in an effort to improve the cell efficiency of CIGS solar cells. The Cu-poor thin films with the ([Cu]/[In]t[Ga]) composition ratios of 0.70e0.77 were obtained showing that the composition of the target can be transferred to the film. It was also observed that the strongly (220)/(204) preferred orientation appeared at the substrate temperatures higher than 600 (cid:2)C, which is known to be essential for achieving high-quality CIGS solar cells. This result indicates that the CueSe compounds present in trace amounts of CIGS films hinder the (112) orientation and promotes the growth of the (220) orientation. As a result, the CIGS absorber layer with the Cu-poor composition and the (220)/(204) preferred orientation exhibited a drastically improved cell efficiency of 10.02%.
关键词： Quaternary single target,CIGS,Cu-poor composition,One-step sputtering
更新于2025-09-12 10:27:22
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The phase optimization, optical and electrical properties of kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film prepared by single target RF magnetron sputtering technique for solar cell application.
摘要： Cu2ZnSnS4 (CZTS) thin film was prepared by RF sputtering technique from a single quaternary target by optimizing RF power, in-situ substrate temperature and post deposition annealing temperature. The single phase formation of crystalline CZTS thin film has been verified at a particular optimized condition by characterizing through X-ray diffraction, Raman selected area electron diffraction study. The surface properties such as particle size, shape and roughness and elemental composition of amorphous and crystalline phase of CZTS studied by atomic force microscope, scanning electron microscope and energy dispersive analysis of x-rays. The optical absorption and photoluminescence studies of post-deposition annealed film prove the defect free and single phase CZTS formation. The band gap calculation for crystalline CZTS showed band gap of 1.49eV calculated from the Tauc plot. The electrical properties of optimized CZTS thin film has been studied from Hall effect measurement showing P-type conductivity with better carrier concentration and Hall mobility.
关键词： Optical properties,Electrical properties,Phase optimization without post sulfurization process,Solar cell material,CZTS thin film,Single target RF magnetron sputtering
更新于2025-09-11 14:15:04