III–V nanowire array telecom lasers on (001) silicon-on-insulator photonic platforms

摘要： III–V nanowires have recently gained attention as a promising approach to enable monolithic integration of ultracompact lasers on silicon. However, III–V nanowires typically grow only along h111i directions, and thus, it is challenging to integrate nanowire lasers on standard silicon photonic platforms that utilize (001) silicon-on-insulator (SOI) substrates. Here, we propose III–V nanowire lasers on (001) silicon photonic platforms, which are enabled by forming one-dimensional nanowire arrays on (111) sidewalls. The one-dimensional photonic crystal laser cavity has a high Q factor >70 000 with a small footprint of (cid:2)7.2 (cid:3) 1.0 lm2, and the lasing wavelengths can be tuned to cover the entire telecom bands by adjusting the nanowire geometry. These nanowire lasers can be coupled to SOI waveguides with a coupling ef?ciency > 40% while maintaining a suf?ciently high Q factor (cid:2)18 000, which will be bene?cial for low-threshold and energy-ef?cient operations. Therefore, the proposed nanowire lasers could be a stepping stone for ultracompact lasers compatible with standard silicon photonic platforms.