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[Advances in Intelligent Systems and Computing] Information Systems Design and Intelligent Applications Volume 862 (Proceedings of Fifth International Conference INDIA 2018 Volume 1) || Study of Electrical and Magnetic Properties of Multiferroic Composite (BiFeO3)x(Ba5RTi3V7O30)1?x
摘要： Polycrystalline Samples of the composite (BiFeO3)x(Ba5RTi3V2O30)1?x (R––Rare Earth Element) is prepared by high-temperature Solid-State Reaction Technique. The formation of the material has been con?rmed through XRD (X-ray Diffractometer) to ensure the single-phase formation. Dielectric characterization has been done by Impedance Analyser (HIOKI-IM3536) to study the variation of dielectric constant with frequency and temperature in a wide range to see the dielectric anomaly. Magnetization study is also done by Vibration Magnetometer for different values of x in the composite (BiFeO3)x(Ba5RTi3V2O30)1?x.
关键词： Dielectric,XRD,Impedance analyzer,magnetization,Neel temperature
更新于2025-09-23 15:23:52
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High-temperature mid-infrared absorption spectra of methanol (CH3OH) and ethanol (C2H5OH) between 930 and 1170?cm-1
摘要： A methodology was recently developed with a broad-tuning, rapid-scan external-cavity quantum-cascade-laser in conjunction with shock tube facilities to measure the high-temperature mid-infrared absorption spectra of gaseous molecules. This technique is deployed to measure the cross section profiles in the C-O stretching band for methanol (CH3OH) and ethanol (C2H5OH) between 930 and 1170 cm-1. Methanol spectra are presented from 620 to 1304K between 0.98-3.30 atm with distinctive P, Q, and R branches of the ν8 vibrational band. At elevated temperatures, the emergence of hotbands and high-J ro-vibrational transitions are clearly observed. The absorption cross sections of ethanol are measured from 296 to 1018K between 0.90-3.27 atm. The peak strength decreases with temperature, with the peak location shifting to lower wavenumbers. These measurements are compared with existing empirical models, illustrating a strong need for the development of a high-temperature spectroscopic database.
关键词： Absorption spectra,Ethanol,Mid-infrared,High-temperature,Shock tube,Methanol
更新于2025-09-23 15:23:52
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Suppressed Triplet Exciton Diffusion Due to Small Orbital Overlap as a Key Design Factor for Ultralong-Lived Room-Temperature Phosphorescence in Molecular Crystals
摘要： Persistent room-temperature phosphorescence (RTP) under ambient conditions is attracting attention due to its strong potential for applications in bioimaging, sensing, or optical recording. Molecular packing leading to a rigid crystalline structure that minimizes nonradiative pathways from triplet state is often investigated for efficient RTP. However, for complex conjugated systems a key strategy to suppress the nonradiative deactivation is not found yet. Here, the origin of small rates of a nonradiative decay process from triplet states of conjugated molecular crystals showing RTP is reported. Optical microscopy analysis showed that, despite a favorable molecular stacking, an aromatic crystal with strong RTP is characterized by small diffusion length and small values of the diffusion coefficient of triplet excitons. Quantum chemical calculations reveal a large overlap between the lowest unoccupied molecular orbitals but very small overlap between the highest occupied molecular orbitals (HOMOs). Inefficient electron exchange caused by the small overlap of HOMOs prevents triplet excitons from diffusing over long distances and consequently from quenching at defect sites inside the crystal or at the crystal surface. These results will allow design of comprehensive molecular structures to obtain molecular solids with more efficient RTP.
关键词： suppressed nonradiative rate,persistent room-temperature phosphorescence,triplet exciton diffusion,molecular orbital overlap,fluorescence microscopy
更新于2025-09-23 15:23:52
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Development of a high temperature diamond anvil cell for x ray absorption experiments under extreme conditions
摘要： X-ray absorption spectroscopy (XAS) is presently a powerful and established tool to investigate solid and liquid matter at high pressure and high temperature (HP-HT). HP-HT XAS experiments rely on high pressure technology whose continuous development has extended the achievable range up to 100 GPa and more. In high pressure devices, high temperature conditions are typically obtained by using internal and external resistive heaters or by laser heating. We have recently developed a novel design for an internally heated diamond anvil cell (DAC) allowing XAS measurements under controlled high temperature conditions (tested up to about 1300 K). The sample in the new device can be rapidly heated or cooled (seconds or less) so the cell is suitable for studying melting/crystallization dynamics when coupled with a time-resolved XAS setup (second and sub-second ranges). Here we describe the internally heated DAC device which has been realized and tested in experiments on pure selenium at the energy dispersive ODE beamline of Synchrotron SOLEIL. We also present results obtained in XAS experiments of elemental Se using a large volume Paris-Edinburgh press, as an example of the relevance of structural studies of matter under extreme conditions.
关键词： high pressure,high temperature,DAC,Selenium,XAS
更新于2025-09-23 15:23:52
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Highly efficient green upconversion luminescence of ZnMoO4:Yb3+/Er3+/Li+ for accurate temperature sensing
摘要： Upconversion luminescence and optical temperature sensing properties of Yb3+/Er3+/Li+ tri-doped ZnMoO4 phosphors were investigated. It has been demonstrated that Li+ doping affected not only the local symmetry of Yb3+ and Er3+ but also the distribution of them in the host lattice. As a result, the significantly improved green upconversion luminescence was obtained when excited at 980 nm. The pumping power dependent photo-thermal behavior was used to evaluate the reliability of upconversion temperature sensing. An accurate temperature scale was established by eliminating the impact of thermal effect, and the sensing ability was evaluated via a comparison with the results reported in literatures.
关键词： Li+ doping,Upconversion luminescence,Thermal effect,Temperature sensing,ZnMoO4
更新于2025-09-23 15:23:52
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[Micro/Nano Technologies] Micro Electro Mechanical Systems Volume 2 || Micro Thermal Flow Sensor
摘要： Measurement of ?uid mechanics is very important in various ?elds, and ?ow sensors have been widely applied to execute accurate and ef?cient measurements. Compared with other sensing principle, thermal ?ow sensors are based on convective heat transfer and take merits of simple structure and easy use and thus offer a practical solution for various ?uidics applications. In this chapter, we describe mainly hot-?lm anemometer fabricated on polyimide substrate. Hot-?lm or hot-wire anemometer utilizes a thermal element that serves as both a joule heater and a temperature sensor. We introduce the principle of thermal ?ow sensing, design and fabrication of the micro hot-?lm ?ow sensor, the measurement methodology, and application cases by using the micro hot-?lm ?ow sensors.
关键词： Flow sensor,Temperature compensation,Micro anemometer,Hot ?lm,Measurement principle
更新于2025-09-23 15:23:52
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High-precision FBG demodulation using amplitude ratio curve with sharp peak
摘要： For the fiber Bragg grating (FBG) sensor based on the reflection peak position searching demodulation algorithms, a key problem is that the demodulation precision of measurement signal is seriously limited by the full width half maximum (FWHM) of the FBG reflection spectrum. In this paper, in order to overcome this problem and enhance the measurement precision, we proposed a high-precision demodulation method based on amplitude ratio curve to instead of the FBG reflection spectrum, which can increase the sensing precision significantly. In this method, the Bragg wavelength of FBG is modulated periodically with a sinusoidal function to obtain a series of reflection spectra. Then at each wavelength the amplitude ratio between second harmonic frequency component and fundamental frequency component is calculated to create the amplitude ratio curve. Here, we present a comprehensive theoretical analysis and experimental demonstration to verify the advantages of this method. Comparing with the demodulation method based on the FBG reflection spectrum, the average maximum measure error (MME) of Bragg wavelength is reduced from ± 1.54 pm to ± 0.15 pm, which improved by 10.3 times. In addition, the influence of the modulation amplitude and sampling frequency on demodulation accuracy are also studied in this paper.
关键词： Amplitude ratio curve,High precision temperature measurement,Fiber Bragg grating
更新于2025-09-23 15:23:52
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UV Illumination-Enhanced Molecular Ammonia Detection Based On a Ternary-Reduced Graphene Oxide–Titanium Dioxide–Au Composite Film at Room Temperature
摘要： In this work, we report on UV illumination enhanced room-temperature trace NH3 detection based on ternary composites of reduced graphene oxide nanosheets (rGO), titanium dioxide nanoparticles (TiO2) and Au nanoparticles as the sensing layer, which is firstly reported by far. The effect of UV state as well as componential combination and content on the sensing behavior disclosed that, rGO nanosheets served as not only a template to attach TiO2 and Au, but an effective electron collector and transporter; TiO2 nanoparticles acted as a dual UV and NH3 sensitive material; Au nanoparticles could increase the sorption sites and promote charge separation of photoinduced electron-hole pairs. The as-prepared rGO/TiO2/Au sensors were endowed with a sensing response of 8.9% toward 2 ppm NH3, a sensitivity of 1.43×10-2/ppm within the investigated range, nice selectivity, robust operation repeatability and stability, which was fairly competitive in comparison with previous work. Meanwhile, the experimental results provided clear evidence of inspiring UV-enhanced gas detection catering for the future demand of low power-consumption and high sensitivity.
关键词： Room temperature.,Gas sensor,Reduce graphene oxide,Ammonia,Au nanoparticle,Titanium dioxide,UV illumination
更新于2025-09-23 15:23:52
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Effect of Macro-scale Mechanical Stress of Silicon Wafer on Room Temperature Photoluminescence Signals
摘要： Mechanical stress was applied to single side polished and double side polished Si wafers in polypropylene wafer containers for different localized stress levels and durations. Room temperature photoluminescence (RTPL) spectra from Si wafers were measured before and after applying localized mechanical stress. Significant changes (up to 26% increase) in RTPL intensity were measured from areas under different stress levels even 1 year after the fixtures for mechanical stress generation were removed. Significant effects of localized mechanical stress on RTPL intensity variations were measured up to 49 days after the fixture removal. Nearly fully relaxed RTPL signatures for localized mechanical stress were measured 450 days after the fixture removal. RTPL intensity is found to be very sensitive to the externally applied macro-scale mechanical stress of Si wafers and residual (or memorized) internal stress even after removal of fixtures for external mechanical stress generation.
关键词： Silicon,room temperature photoluminescence,stress relaxation,mechanical stress
更新于2025-09-23 15:23:52
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Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$HfO2 interfacial layer formed by atomic layer deposition
摘要： X-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia (HfO2) thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the HfO2 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/HfO2/n-GaAs structures with 3- and 5-nm HfO2 interfacial layers, respectively, have been obtained from the I–V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the HfO2 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal–insulating layer–semiconductor (MIS) devices with 3- and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde’s method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the (cid:2)b(V ) value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the (cid:2)b(V ) vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde’s method for the same bias voltage values.
关键词： metal–insulating layer–semiconductor (MIS) device,Barrier height modification and inhomogeneous,bias-dependent barrier height,temperature-dependent MIS diode parameters,atomic layer deposition (ALD)
更新于2025-09-23 15:23:52