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Preparation of Monodispersed Nanoparticles of Transparent Conductive Oxides
摘要： Generally, indium-tin-oxides (ITO) thin film is prepared by the sputtering process with ITO target, but only 20 % of ITO yielded from the target is deposited on the substrate. Namely, about 80 % ITO is exhausted by the deposition elsewhere far from the substrate. The recycling process of indium is limited so that ca. 20 % ITO of the starting material is lost without any recovery. Even if the recycling of ITO has been carried out in this process, we should prepare ITO target of 5 times more than apparent use of ITO on film. If we change it to printing process from the sputtering, the reduction in ITO use is expected as ca. 50 %, considering the increase in film thickness by printing. Our target technology also includes ITO nanoink for the project. As a result, monodispersed ITO nanoparticles (NPs) with a cubic shape were fabricated by using quaternary ammonium hydroxide-assisted metal hydroxide organogels. These NPs have perfect uniformity in size with beautiful shape, and perfect single crystalline structure including Sn. As we were attempted to make thin film with ITO nanoink, it was successfully fabricated below 200 nm in thickness and the resistivity was drastically decreased below 1.0 × 10–3 Ω cm after heat treatments. GZO nanoink as substitute of ITO has also been developed.
关键词： indium tin oxide,transparent conductive oxides,uniform nanoparticles,shape control
更新于2025-09-23 15:23:52
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Transparent Conductive Materials (Materials, Synthesis, Characterization, Applications) || Metallic Oxides (ITO, ZnO, SnO <sub/>2</sub> , TiO <sub/>2</sub> )
摘要： The material class of transparent conductive oxides (TCOs) combines two seemingly contradictory physical properties: high optical transmittance in the visible and near-infrared (NIR) spectral range (like insulators) and high electrical conductivity (like metals). These two key properties make TCO materials very well suited for transparent thin film electrodes for thin film solar cells, flat panel displays, light-emitting devices, or heated windows.
关键词： ZnO,light-emitting devices,SnO2,Transparent Conductive Oxides,thin film electrodes,ITO,solar cells,TiO2,flat panel displays,TCOs
更新于2025-09-23 15:21:21
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European Microscopy Congress 2016: Proceedings || The microstructure of ZnSnO and its correlation to electrical and optical properties
摘要： Over the last years, the interest in the field of transparent conductive oxides (TCOs) has grown dramatically due to their wide applicability and improved properties that may be reached when incorporating these materials into devices. TCOs are mainly used in the industry of low-emissivity windows, flat panel displays, light emitting diodes and photovoltaics [1]. For photovoltaic applications, the main purpose of TCOs is to let light enter into the solar cell and to extract the electric charges allowing them to be drifted towards the electric contacts. Therefore, it is necessary for these materials to be as transparent and as conductive as possible [2]. Ideally, TCOs should be indium-free, as indium is scarce and hence expensive [3]. The goal is therefore to optimize a material that is earth-abundant, low-cost and with good electrical and optical properties. As many steps in photovoltaic device fabrication require a high temperature, a crucial requisite for TCOs is also thermal stability. Based on these criteria, an amorphous compound of Zn-Sn-O (ZTO) deposited by sputtering was selected for the present study [4]. The microstructure of ZTO is known to strongly influence its electrical and optical properties, as well as its thermal stability. In that regard, transmission electron microscopy (TEM), in situ X-ray diffraction (XRD) experiments and conventional electrical and optical characterization were performed to assess the links between annealing treatments, ZTO microstructure and optical and electrical properties. First, samples were annealed in air, in an oven up to 150 and 500 °C and then investigated by transmission electron microscopy. While electrical and optical properties were measured to change significantly upon annealing, no major microstructural change was observed in TEM images. In situ theta-2theta XRD experiments were then performed by increasing the temperature up to 1000-1200°C in air and vacuum. Substrates resistant to these temperatures were employed, namely fused silica and sapphire. Different heating rates were used, ranging from 3°C/min up to 10°C/min. The XRD results (Fig.1) demonstrate that the amorphous phase is stable up to >500 °C when annealed in air and > 900 °C when annealed in 10-4 mbar, hence highlighting a strong influence of the annealing atmosphere on the crystallisation temperature. Rutile SnO2 is the first phase to crystallize and remains the main crystal structure observed throughout the whole process, with Al2ZnO4 forming at higher temperatures as a result of an interaction between the TCO layer and the sapphire substrate. Electrical properties were measured to decrease after annealing, with TEM measurements demonstrating that Zn migration at high temperature leads to the formation of a defective crystalline structure (Fig.2). This effect is more severe when annealing in air when compared to vacuum conditions. Indeed, the presence of oxygen in the surrounding atmosphere facilitates the formation of crystalline SnO2, a process that repeals Zn atoms to grain boundaries and surfaces of the TCO layer (Fig.3). On the other hand, the formation of crystalline SnO2 and the release of zinc are both delayed when annealing in vacuum. In general, crystallisation and Zn evaporation are observed to be detrimental to the electrical properties as it leads to the formation of voids in the structure. On a technological level, the high thermal stability of the defect-free amorphous ZTO microstructure in oxygen-poor atmospheres may enable its application in high efficiency photovoltaic architectures.
关键词： TEM,XRD,crystallization kinetics,transparent conductive oxides
更新于2025-09-23 15:21:21
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Design of ultrathin OLEDs having oxide-based transparent electrodes and encapsulation with sub-mm bending radius
摘要： Highly flexible ultrathin organic light emitting diodes (OLEDs) hold vast potential as light sources particularly for wearable and imperceptible electronics. Most of the work demonstrated to date for highly flexible OLEDs, however, has relied on non-conventional transparent conductors such as conjugated polymers and has had no proper encapsulation or, if any, simple polymer-based encapsulation. We here demonstrate OLEDs that can be bent at a sub-mm radius even with conventional transparent conductive oxides (TCOs) and full encapsulation based on a multilayer gas barrier containing aluminum oxides, both of which are prone to strain-induced fracture. We realize such a small bending radius not only by adopting ultrathin substrates but also by exploiting the beneficial neutral plane shift toward the top of substrates identified in a system consisting of a ultrathin substrate and a multilayer device structure on its top. The proposed OLEDs exhibit stable performance after 1,000 bending iterations even at a bending radius far smaller than 1 mm and show similar reliability to that of glass-based reference devices even after two weeks in the acceleration test chamber.
关键词： Transparent conductive oxides,Ultrathin OLEDs,Multilayer encapsulation,Crack-onset strain,Neutral plane shift
更新于2025-09-23 15:19:57
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Innovative wide-spectrum MGZO transparent conductive films grown via reactive plasma deposition for Si hetero-junction solar cells
摘要： In this work, wide-spectrum Mg- and Ga co-doped ZnO (MGZO) transparent conductive films are developed via reactive plasma deposition (RPD) technique with soft thin-film growth process. MGZO film with a work function of ~4.36 eV can be achieved within 12 min without any intentional substrate-heating treatment. 480nm-thickness MGZO film exhibits a low resistivity of ~9.9x10-4 Ωcm and a high transmittance of ~82.6% in the UV-VIS-NIR region (λ approximately 400 nm-1200 nm). XRD spectra show that MGZO films exhibit (103) preferred orientation as the film thickness increases. A silicon hetero-junction (SHJ) solar cell based on 480nm-thick MGZO at the front side is completed. Excellent continuity of MGZO film is proven by the cross-sectional SEM images and there are no cracks and pinholes on the top and bottom of the c-Si pyramids. Further efficiency improvements are achieved using an ultra-thin SnOx buffer layer with an ameliorated p-a-Si:H/TCO interface. Also, a silicon hetero-junction (SHJ) solar cell using MGZO films on both sides is achieved with a conversion efficiency of 19.02%. These experimental results demonstrate that low-cost RPD-grown MGZO TCO materials could be commercially appropriate replacements for the conventional In2O3-based materials commonly used in SHJ solar cells and other optoelectronic devices.
关键词： Mg and Ga co-doping,Solar cells,Si heterojunction (SHJ),ZnO films,Transparent conductive oxides (TCO),Reactive plasma deposition (RPD)
更新于2025-09-19 17:13:59