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Control of Structural and Electrical Properties of Indium Tin Oxide (ITO)/Cu(In,Ga)Se <sub/>2</sub> Interface for Transparent Back-Contact Applications
摘要： Development of transparent-conducting oxide (TCO) back contact for Cu(In,Ga)Se2 (CIGS) absorber is crucial for bifacial CIGS photovoltaics. However, GaOx formation at the TCO/CIGS interface has hampered the photocarrier extraction. Here, by controlling the Na doping scheme, we show that the hole transporting properties at the indium?tin oxide (ITO)/CIGS back contact can be substantially improved, regardless of the GaOx formation. Na incorporation from the glass substrate during the GaOx forming phase created defective states at the interface, which allowed efficient hole extraction from CIGS, while post Na treatment after GaOx formation did not play such a role. Furthermore, we discovered that an almost GaOx-free interface could be made by reducing the underlying ITO film thickness, which revealed that ITO/CIGS junction is inherently Schottky. In the GaOx-free condition, post-Na treatment could eliminate the Schottky barrier and create ohmic junction due to generation of conducting paths at the interface, which is supported by our photoluminescence analysis.
关键词： Schottky barrier,indium-tin oxide,photovoltaics,Na doping,Ga)Se2,ohmic contact,GaOx,transparent-conducting oxide,Cu(In
更新于2025-09-23 15:22:29
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Time Dependent Facile Hydrothermal Synthesis of TiO2 Nanorods and their Photoelectrochemical Applications
摘要： In the present investigation, we report facile hydrothermal synthesis of TiO2 nanorods with high density rutile phase on Transparent Conducting Oxide (TCO) for enhanced solar cell application. The structural, optical, morphological, compositional and electrochemical properties are investigated by detailed XRD, UV-Vis-NIR spectrophotometer, FESEM, TEM, EDAX, XPS and photoelectrochemical studies. It is demonstrated that, the deposited TiO2 thin film shows pure rutile phase with tetragonal crystal structure. Optical spectra showed strong light absorption in UV region and FESEM images confirm the time dependent growth of TiO2 nanorods. EDAX and XPS Spectra confirm the formation of pure TiO2 nanorods. Photoelectrochemical performance with respect to time dependent growth of TiO2 nanorods showed highest photoconversion efficiency = 5.1%.
关键词： Hydrothermal synthesis,Photoelectrochemical cell property,Single crystalline,Photoconversion efficiency,TiO2 nanorods,Transparent conducting oxide (TCO)
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Impact of Deposition of ITO on Tunnel Oxide Passivating Poly-Si Contact
摘要： In this study, we investigate the impact of the deposition of indium tin oxide (ITO) via DC magnetron sputtering on tunnel oxide passivating poly-Si contacts. Before ITO deposition to the tunnel SiOx passivating n+ poly-Si rear-contact on the cell structure with an SiNx/Al2O3 passivating boron emitter, the implied open-circuit voltage (iVoc) and implied fill factor (iFF) were measured to be 694±10 mV and 83±0.6%, respectively. After ITO sputtering and curing annealing, the iVoc and iFF were almost fully recovered, resulting in the iVoc of 685±11 mV and iFF of 81.9±0.8%. The characteristic of fully recovered effective lifetime is attributed to unique sputtering conditions employing a very low power density at room temperature and curing.
关键词： silicon solar cell,indium tin oxide,transparent conducting oxide,DC magnetron sputtering,tunnel oxide,perovskite,tandem solar cell
更新于2025-09-23 15:19:57
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Simulation and optimization of CH3NH3SnI3 based inverted perovskite solar cell with NiO as Hole transport material
摘要： A planar perovskite solar cell (PSC) with p-i-n inverted structure is modeled and simulated using SCAPS software to determine the power output characteristics under illumination. The inverted structure is NiO/CH3NH3SnI3/PCBM where NiO is the hole transport layer (HTL), CH3NH3SnI3 is the perovskite absorber layer and PCBM is the electron transport layer (ETL). Simulation efforts are focused on thickness of three layers, defect density of interfaces, density of states, and metal work function effect on power conversion ef?ciency (PCE) of solar cell. For optimum parameters of all three layers, ef?ciency of 22.95% has been achieved. From the simulations, an alternate lead free inverted perovskite solar cell is introduced.
关键词： Electron transport material,Transparent conducting oxide,Inverted perovskite solar cell,Hole transport material,Device simulation,Defect density
更新于2025-09-23 15:19:57
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Excimer laser annealing method for achieving low electrical resistivity and high work function in transparent conductive amorphous In2O3:Zn films on a polyethylene terephthalate substrate
摘要： We have developed an excimer laser annealing method to achieve low electrical resistivity (ρ) and a high work function in amorphous In2O3:Zn (IZO) films on polyethylene terephthalate (PET) substrates. The effect of excimer laser irradiation of the films on crack formation, electrical properties (ρ, carrier concentration, and Hall mobility), and work function were investigated. KrF excimer laser irradiation produced cracks in the surface of the IZO films on PET as a result of thermal expansion of the PET substrate. By inserting an amorphous SiO2 layer as a heat barrier between the IZO layer and PET substrate, crack formation was prevented. Moreover, it was found that the work function of IZO film could be controlled by the laser fluence and repetition rate. Irradiation of a 150-nm-thick amorphous IZO film on a SiO2-coated PET substrate achieved a low ρ of 3.55 × 10?4 Ω cm and a high work function of 5.4 eV due to the reduction of oxygen and carbon while maintaining a flat surface.
关键词： Excimer laser annealing,Work function control,Buffer layer,Transparent conducting oxide
更新于2025-09-19 17:13:59
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Effect on the reduction of the barrier height in rear-emitter silicon heterojunction solar cells using Ar plasma-treated ITO film
摘要： In this study, we investigated the effect of plasma treatment on an indium tin oxide (ITO) film under an ambient Ar atmosphere. The sheet resistance of the plasma-treated ITO film at 250 W (37.6 ?/sq) was higher than that of the as-deposited ITO film (34 ?/sq). Plasma treatment was found to decrease the ITO grain size to 21.81 nm, in comparison with the as-deposited ITO (25.49 nm), which resulted in a decrease in the Hall mobility. The work function of the Ar-plasma-treated ITO (WFITO = 4.17 eV) was lower than that of the as-deposited ITO film (WFITO = 5.13 eV). This lower work function was attributed to vacancies that formed in the indium and oxygen vacancies in the bonding structure. Rear-emitter silicon heterojunction (SHJ) solar cells fabricated using the plasma-treated ITO film exhibited an open circuit voltage (VOC) of 734 mV, compared to SHJ cells fabricated using the as-deposited ITO film, which showed a VOC of 704 mV. The increase in VOC could be explained by the decrease in the work function, which is related to the reduction in the barrier height between the ITO and a-Si:H (n) of the rear-emitter SHJ solar cells. Furthermore, the performance of the plasma-treated ITO film was verified, with the front surface field layers, using an AFORS-HET simulation. The current density (JSC) and VOC increased to 39.44 mA/cm2 and 736.8 mV, respectively, while maintaining a WFITO of 3.8 eV. Meanwhile, the efficiency was 22.9% at VOC = 721.5 mV and JSC = 38.55 mA/cm2 for WFITO = 4.4 eV. However, an overall enhancement of 23.75% in the cell efficiency was achieved owing to the low work function value of the ITO film. Ar plasma treatment can be used in transparent conducting oxide applications to improve cell efficiency by controlling the barrier height.
关键词： Work function,Silicon heterojunction solar cell,Transparent conducting oxide,AFORS-HET,Plasma treatment,Indium Tin Oxide
更新于2025-09-16 10:30:52
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Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
摘要： The use of ultra-wide bandgap transparent conducting beta gallium oxide (b-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the ShockleyeQueisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
关键词： Bulk photovoltaic effect,Pb(Zr,Ti)O3,Solar cell architecture,Ferroelectric photovoltaics,Ga2O3,Gallium oxide,Transparent conducting oxide,Ultra-wide bandgap semiconductors
更新于2025-09-16 10:30:52
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Comparative Study of Silicon Photonic Modulators based on Transparent Conducting Oxide and Graphene
摘要： Transparent conducting oxides (TCOs) and graphene have been extensively investigated as promising materials for electro-optic modulation applications due to their dynamically configurable near-infrared properties. In this study, a detailed comparison between modulators comprising either a TCO film or a graphene-insulator-graphene structure is presented, considering a conventional silicon photonic waveguide as the underlying physical system. Both in-line and resonant configurations are investigated, integrating an electro-optic switching mechanism that changes the free-carrier concentration in the configurable material by means of electrical gating. The carrier-concentration change effect is rigorously modeled using solid-state physics principles, providing a physically consistent and straightforward comparison between the investigated material platforms. The performance of the designed modulators is thoroughly evaluated in terms of the extinction ratio, insertion loss, energy consumption, and bandwidth in both TE and TM operation. On the whole, both technologies support high-performance optical modulation, with TCO designs exhibiting an up to 40% smaller footprint, with their graphene counterparts standing out for their subpicojoule-per-bit performance on a physical system as simple as the employed silicon-wire waveguide. The low insertion losses as well as the impressive over-100-GHz switching speeds suggest both TCOs and graphene as very promising material candidates for future on-chip modulation applications.
关键词： silicon photonic modulators,transparent conducting oxide,near-infrared properties,electro-optic modulation,graphene
更新于2025-09-12 10:27:22
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Dependence of Photovoltaic Properties of Spray-Pyrolyzed F-Doped SnO2 Thin Film on Spray Solution Preparation Method
摘要： Spray pyrolysis deposition of SnCl2.2H2O- and NH4F-containing solution is an appropriate method for deposition of ?uorine-doped tin oxide (FTO), which has extensive applications in photovoltaic devices. According to a literature review, several spray preparation methods have been studied. These methods lead to both precipitated and unprecipitated spray solutions. Precipitated and unprecipitated solutions were used for deposition of FTO thin ?lms. FTO obtained from unprecipitated solution yielded the lowest sheet resistance and resistivity, which was due to its highest electron concentration (ne). However, precipitation had no in?uence on electron mobility. The x-ray diffraction patterns of precipitates showed the presence of Sn- and F-containing compounds, which implied partial depletion of F and Sn from solutions. As a result, a lower amount of F(cid:2) ions was incorporated into FTO, which led to lower ne. In addition, partial depletion of Sn led to slightly smaller FTO thickness. Finally, FTO thin ?lm deposited from unprecipitated solution gave the highest ?gure of merit. This means that precipitation in the precursor solution has deleterious effects on electrical and optical properties.
关键词： Fluorine-doped tin oxide,spray pyrolysis deposition,transparent conducting oxide,thin ?lm
更新于2025-09-11 14:15:04
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Study on the electrical, optical, structural, and morphological properties of highly transparent and conductive AZO thin films prepared near room temperature
摘要： A correlation study between the microstructural, electrical, optical, and morphological properties of the highly transparent and conductive Al-doped ZnO (AZO) films of varying thickness deposited by 3D confined DC magnetron sputtering is reported. Incorporating a high-density plasma environment as indicated by plasma diagnostic it was possible to fabricate AZO films of resistivity as low as ~ 5.2×10-4 Ωcm and the maximum transmittance ~ 89 % with well crystalline structured and smooth morphology at low-temperature. Correlation among the film properties reveals the possibility of filling the Zn atom in the Zn vacancy could be responsible for preparing AZO thin film with improved microstructure and high enrichment of carrier mobility and concentration.
关键词： AZO film,3-D confined magnetron sputtering,Transparent conducting oxide (TCO),Plasma processing
更新于2025-09-10 09:29:36