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Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
摘要： InAlN/GaN structures are grown using organometallic chemical vapor deposition at 730 °C. The sample for which the chamber cleaning step was applied after GaN growth shows a sharp In0.3Al0.7N/GaN transition, free electron density of ～2 × 1011 cm?2 and mobility of 44 cm2 V?1 s?1. On the other hand, the sample prepared without growth interruption demonstrated In0.4Al0.15Ga0.45N at the interface and compositional grading towards the In0.4Al0.6N surface. In this case a two-dimensional hole gas (2DHG) is created with a density of ～2 × 1012 cm?2 and mobility of ～0.6 cm2 V?1 s?1. Ga incorporation in the InAlN barrier is crucial for designing non-inverted 2DHG transistors.
关键词： InAlN/GaN,non-inverted heterostructures,two-dimensional hole gas,organometallic chemical vapor deposition
更新于2025-09-10 09:29:36
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Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation
摘要： An analytical model is presented to calculate the two-dimensional electron gas (2DEG) density and barrier height of bare surface AlGaN/AlN/InGaN/GaN double heterostructures, which use InGaN as the conducting layer. The basic model is derived from electrostatic analysis of the di?erent material interfaces. The e?ect of strain relaxation in the InGaN layer is also incorporated here. Further, the impact of a two-dimensional hole gas at the InGaN/GaN interface, formed when the InGaN layer thickness is high, has been considered. The presented results are seen to agree with the available experimental results. Thus, this model can be a useful tool in the design and modeling of InGaN-based III-nitride heterostructures.
关键词： two-dimensional hole gas,AlGaN/InGaN/GaN heterostructure,strain relaxation,two-dimensional electron gas
更新于2025-09-09 09:28:46
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Photon Noise Suppression by a Built-in Feedback Loop
摘要： Visionary quantum photonic networks need transform-limited single photons on demand. Resonance fluorescence on a quantum dot provides the access to a solid-state single photon source, where the environment is unfortunately the source of spin and charge noise that leads to fluctuations of the emission frequency and destroys the needed indistinguishability. We demonstrate a built-in stabilization approach for the photon stream, which relies solely on charge carrier dynamics of a two-dimensional hole gas inside a micropillar structure. The hole gas is fed by hole tunneling from field-ionized excitons and influences the energetic position of the excitonic transition by changing the local electric field at the position of the quantum dot. The standard deviation of the photon noise is suppressed by nearly 50% (noise power reduction of 6 dB) and it works in the developed micropillar structure for frequencies up to 1 kHz. This built-in feedback loop represents an easy way for photon noise suppression in large arrays of single photon emitters and promises to reach higher bandwidth by device optimization.
关键词： semiconductor heterostructure,single photon source,two-dimensional hole gas,Quantum dots,quantum optics,resonance fluorescence
更新于2025-09-04 15:30:14