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Highly Crystallized C-Doped Nickel Oxide Nanoparticles for p-Type Dye-Sensitized Solar Cells with Record Open-Circuit Voltage Breaking 0.5 V
摘要： In this work, unique carbon-doped NiO nanostructure (denoted as C/NiO) was synthesized via a facile precipitation/reduction reaction, followed by a subsequent oxidation process. The successful introduction of carbon in NiO gave rise to multiple tailing of the physical and electronic characteristics, including morphology, crystallinity, and conductivity, and valence band edge position. The carbon-doped NiO-fabricated dye sensitized solar cells actively generated an unrivalled VOC of 0.50 V and also a significantly increased short-circuit current densities (JSC, 0.202 mA cm-2), leading to an overall efficiency of 0.053%. The improved of photovoltaic performance could be mainly attributed to the significantly enhanced charge transport property and regarded charge recombination occurred at the NiO/electrolyte interface. This work provides an extremely simple and effective strategy for incorporating nonmetal elements in semiconductor oxides with remarkably improved photovoltaic performance.
关键词： charge transport,carbon-doped NiO,dye-sensitized solar cells,photovoltaic performance,valence band edge
更新于2025-09-12 10:27:22
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Single Crystal Growth and Characterization of the Chalcopyrite Semiconductor CuInTe2 for Photoelectrochemical Solar Fuel Production
摘要： Transition metal chalcogenides are a promising family of materials for applications as photocathodes in photoelectrochemical (PEC) H2 generation. A long-standing challenge for chalcopyrite semiconductors is characterizing their electronic structure—both experimentally and theoretically—due to their relatively high energy bandgaps and spin orbit coupling (SOC), respectively. In this work, we present single crystals of CuInTe2, whose relatively small optically measured bandgap of 0.9 ± 0.03 eV enables electronic structure characterization by angle-resolved photoelectron spectroscopy (ARPES) in conjunction with first-principle calculations incorporating SOC. ARPES measurements reveal bands that are steeply dispersed in energy with a band velocity of 2.5-5.4 x 105 m/s, almost 50% of the extremely conductive material graphene. Additionally, CuInTe2 single crystals are fabricated into electrodes to experimentally determine the valence band edge energy and confirm the thermodynamic suitability of CuInTe2 for water redox chemistry. The electronic structure characterization and band edge position presented in this work provide kinetic and thermodynamic factors that support CuInTe2 as a strong candidate for water reduction.
关键词： photoelectrochemical H2 generation,electronic structure,spin orbit coupling,chalcopyrite semiconductors,band velocity,valence band edge energy,Transition metal chalcogenides,angle-resolved photoelectron spectroscopy,water redox chemistry,CuInTe2
更新于2025-09-10 09:29:36
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Border trap evaluation for SiO <sub/>2</sub> /GeO <sub/>2</sub> /Ge gate stacks using deep-level transient spectroscopy
摘要： A border trap (BT) evaluation method was established for SiO2/GeO2/Ge gate stacks by using deep-level transient spectroscopy with a lock-in integrator. Ge metal-oxide-semiconductor capacitors (MOSCAPs) with SiO2/GeO2/Ge gate stacks were fabricated by using different methods. The interface trap (IT) and BT signals were successfully separated based on their different dependences on the intensity of injection pulses. By using p-type MOSCAPs, BTs at the position of 0.4 nm from the GeO2/Ge interface were measured. The energy of these BTs was centralized at the position near to the valence band edge of Ge, and their density (Nbt) was in the range of 1017–1018 cm?3. By using n-type MOSCAPs, BTs at the position range of 2.8–3.4 nm from the GeO2/Ge interface were measured, of which Nbt varied little in the depth direction. The energy of these BTs was distributed in a relatively wide range near to the conduction band edge of Ge, and their Nbt was approximately one order of magnitude higher than those measured by p-MOSCAPs. This high Nbt value might originate from the states of the valence alternation pair with energy close to 1 eV above the conduction band edge of Ge. We also found that Al post metallization annealing can passivate both ITs and BTs near to the valence band edge of Ge but not those near to the conduction band edge.
关键词： deep-level transient spectroscopy,valence band edge,conduction band edge,interface trap,border trap,Ge metal-oxide-semiconductor capacitors
更新于2025-09-09 09:28:46