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Efficient sky-blue perovskite light-emitting diodes via photoluminescence enhancement
摘要： The efficiencies of green and red perovskite light-emitting diodes (PeLEDs) have been increased close to their theoretical upper limit, while the efficiency of blue PeLEDs is lagging far behind. Here we report enhancing the efficiency of sky-blue PeLEDs by overcoming a major hurdle of low photoluminescence quantum efficiency in wide-bandgap perovskites. Blending phenylethylammonium chloride into cesium lead halide perovskites yields a mixture of two-dimensional and three-dimensional perovskites, which enhances photoluminescence quantum efficiency from 1.1% to 19.8%. Adding yttrium (III) chloride into the mixture further enhances photoluminescence quantum efficiency to 49.7%. Yttrium is found to incorporate into the three-dimensional perovskite grain, while it is still rich at grain boundaries and surfaces. The yttrium on grain surface increases the bandgap of grain shell, which confines the charge carriers inside grains for efficient radiative recombination. Record efficiencies of 11.0% and 4.8% were obtained in sky-blue and blue PeLEDs, respectively.
关键词： radiative recombination,perovskite light-emitting diodes,yttrium (III) chloride,photoluminescence quantum efficiency,wide-bandgap perovskites
更新于2025-09-12 10:27:22
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Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells
摘要： Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin-film feasibility, flexibility, and high efficiency. To further increase their performance, a wider bandgap PV structure such as indium gallium phosphide (InGaP) has been integrated in two-terminal (2T) tandem configuration. However, it increases the overall fabrication cost, complicated tunnel-junction diode connecting subcells are inevitable, and materials are limited by lattice matching. Here, high-efficiency and stable wide-bandgap perovskite PVs having comparable bandgap to InGaP (1.8–1.9 eV) are developed, which can be stable low-cost add-on layers to further enhance the performance of GaAs PVs as tandem configurations by showing an efficiency improvement from 21.68% to 24.27% (2T configuration) and 25.19% (4T configuration). This approach is also feasible for thin-film GaAs PV, essential to reduce its fabrication cost for commercialization, with performance increasing from 21.85% to 24.32% and superior flexibility (1000 times bending) in a tandem configuration. Additionally, potential routes to over 30% stable perovskite/GaAs tandems, comparable to InGaP/GaAs with lower cost, are considered. This work can be an initial step to reach the objective of improving the usability of GaAs PV technology with enhanced performance for applications for which lightness and flexibility are crucial, without a significant additional cost increase.
关键词： gallium arsenide,phase segregation,perovskite/GaAs tandem cells,thin-film flexible tandem cells,wide-bandgap perovskites
更新于2025-09-12 10:27:22