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Optical fiber coated Zinc Oxide (ZnO) nanorods decorated with Palladium (Pd) for hydrogen sensing
摘要： A novel hydrogen (H2) sensor was developed using acid-etched optical fiber coated with zinc oxide (ZnO) nanorods. The sensing performance was done by comparing the acid-etched fiber coated with ZnO nanorods with and without decorated Palladium (Pd). The conventional optical single-mode fiber (SMF) with a diameter of 125 μm has been modified as a transducing platform by etching it to 11 μm diameter using hydrofluoric acid (HF) to enhance the evanescent field of the light propagates in the fiber core. The etched fiber was coated with ZnO nanorods via hydrothermal process by using seeding and growth solution method. The sensing layer was characterized through Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray (EDX) and X-Ray Diffraction (XRD) to verify the properties of ZnO. Catalyst Palladium (Pd) was sputtered onto the ZnO nanorods to improve H2 detection. The developed sensor operating temperature was found to be 150 °C that produces 6.36 dBm increase in response towards the 1% concentration of H2 in synthetic air. It was then tested with different concentration of H2. The sensor decorated with Pd has better performance in sensing compared to non-decorated Pd based on the output power versus time. The sensor best response and recovery times is 6 and 5 min respectively, for acid-etched optical fiber coated with ZnO nanorods decorated with Pd for 0.75% of H2 concentrations at 150 °C. The results indicate the optical fiber sensor might improve the performance towards H2 as oppose to the conventional electrical sensor.
关键词： Zinc oxide nanorods,Etching optical fiber,Hydrothermal method,Light-intensity response,Hydrogen sensor,Fiber optic sensor
更新于2025-09-19 17:13:59
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Organic-inorganic hybrid composites as an electron injection layer in highly efficient inverted green-emitting polymer LEDs
摘要： Organic-inorganic hybrid light emitting diodes (HyLEDs) consist of an organic emission layer in combination with at least one metal oxide charge injection layer in an inverted structure. Low temperature, solution processing of metal oxide charge injection layers is one of the key factors in reducing the manufacture cost of HyLEDs. Herein, we report the use of composite materials, comprising conjugated polyelectrolytes (CPE) and zinc oxide nanoparticles (ZnO NPs), as the electron injection layer (EIL) in highly-efficient, green-light-emitting poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) polymer LEDs that are carefully optimised for use in an inverted HyLED architecture for the first time. The composite CPE:ZnO EILs are processed via a room temperature, one-step, solution deposition and enable superior device performance relative to ZnO NPs on their own. We find that specifically, they (i) improve EIL morphology, reducing surface roughness as well as pin-hole size and density, (ii) induce a favourable vacuum level shift for electron injection by coordinate bonding between the CPE and ZnO constituents, and (iii) reduce interfacial quenching by passivation of ZnO chemical defects caused by oxygen vacancies. This work is also the first demonstration that blending ZnO NPs and CPE supports much faster electroluminescence turn-on times (~7.12 μs) than for traditional ZnO/CPE bilayer devices (~0.4 s) via ‘locking’ of the CPE mobile ions, as well as higher device performance. This demonstrates good suitability for display applications. After optimisation of the EIL composition and the thickness of the F8BT emissive layer, we achieve promising device efficiencies of 16.5 cd/A and 5.41 lm/W for devices with a 1.1 μm thick F8BT layer, which is particularly relevant for potential roll-to-roll fabrication. These results clearly demonstrate the potential that this organic-inorganic composite EIL material has for the realisation of cheap, scalable and highly efficient, printable HyLED devices.
关键词： inverted,Hybrid light-emitting diodes,nanoparticles,electron injection layers,conjugated polyelectrolytes,zinc oxide
更新于2025-09-19 17:13:59
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Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors
摘要： Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching ION/IOFF ratio of approximately 105. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.
关键词： visible light photodetection,plasmon energy detection,ink-jet printing,zinc-oxide-based thin-film transistors,oxygen plasma treatment
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - Seoul, Korea (South) (2019.10.27-2019.11.2)] 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - A Neural Network for Detailed Human Depth Estimation From a Single Image
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： monolithic ICs,pulse measurements,zinc oxide,gate charge,dc switch,ionic semiconductors,RF switch,thin-film transistors (TFTs),Cutoff frequency
更新于2025-09-19 17:13:59
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Ultraviolet photodetector on flexible polymer substrate based on nano zinc oxide and laser-induced selective metallization
摘要： This study fabricated a sensitive and fast response nano zinc oxide (nano-ZnO) ultraviolet (UV) photodetector on flexible polymer substrate via laser direct structuring (LDS) technology. The polystyrene-block-poly-(ethylene-co-propylene)-block-polystyrene copolymer/polypropylene (SEPS/PP) composites incorporated with laser sensitizer of copper hydroxyl phosphate [Cu2(OH)PO4] were designed as flexible LDS material. X-ray photoelectron spectroscopy analysis confirmed that partial Cu2t in SEPS/PP composites was reduced to Cu0 (element copper), which could be used as a catalyst for selective metallization. As a result, the well-defined interdigitated copper electrode was successfully fabricated on polymer substrate. Moreover, the UV photodetector was fabricated through spin-coating nano-ZnO on the interdigitated copper electrode. Photocurrent analysis demonstrated that the obtained UV photodetector exhibited excellent sensitivity and stability. The rise and decay times of the UV photodetector were less than 1 and 0.25 s, respectively. This study provided a guideline to develop electronic devices on flexible polymer materials based on LDS technology.
关键词： A. Flexible polymer,A. Zinc oxide,B. UV photodetector,E. Selective metallization,E. Laser activation
更新于2025-09-19 17:13:59
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Quantum dot light-emitting diodes with an Al-doped ZnO anode
摘要： A study of a hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide (ITO)-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. The Kelvin probe force microscopy measurement shows that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOT:PSS) interface can be adjusted by the sputtering pressures, which was confirmed by the hole-only devices. The AZO films with low surface roughness can form a good AZO/PEDOT:PSS interface, which can increase the holes’ injection, and result in improved charge balance. The maximum current efficiency, luminance and external quantum efficiency of the optimized QLEDs devices under a sputtering pressure of 1 mTorr can achieve values of 50.75 cd/A, 102,500 cd/m2 and 12.94%, respectively.
关键词： radio-frequency magnetron sputtering,Al-doped zinc oxide,quantum light-emitting diode,transparent electrode
更新于2025-09-19 17:13:59
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New Immunosensing-Fluorescence Detection of Tumor Marker Cytokeratin-19 Fragment (CYFRA 21-1) Via Carbon Quantum Dots/Zinc Oxide Nanocomposite
摘要： The rapid detection of lung cancer in early stages using the antigen cytokeratin-19 fragment (CYFRA 21-1) as a tumor marker in human serum plays an important role in the survival of patients and taking a fast surgical reaction. This study aimed to employ the green synthesized carbon quantum dots conjugated zinc oxide nanocomposite as a highly sensitive fluorescence immunosensing solution for fast determination of CYFRA 21-1 antigen in human serum. The suggested method was conducted by applying a hydrothermal method to prepare carbon quantum dots using Citrus lemon pericarp. The formed carbon quantum dots were used in the reduction and stabilization of zinc acetate to synthesize carbon quantum dots-zinc oxide nanocomposite. To form a sandwich capping antibody-antigen-antibody immunosensing system, a CYFRA 21-1 antigen was trapped by immobilizing a non-conjugated monoclonal antibody BM 19.21 on the surface of carbon quantum dots-zinc oxide nanocomposite and another monoclonal antibody KS 19.1, which was coated on the microtiter well surface. This system has a tunable fluorescence feature recorded at excitation and emission of λex = 470 and λem = 520 nm, respectively. The suggested nanocomposite fluorescence immunosensing system displayed a linear relationship of 0.01–100 ng mL?1 with a limit of detection of 0.008 ng mL?1. The suggested immunosensing system based on carbon quantum dots-zinc oxide nanocomposite provides a promising approach for rapid diagnoses of lung cancer by detecting CYFRA 21-1 in human serum.
关键词： Carbon quantum dots,Fluorescence,Immunoassay,Cytokeratin fragment 21-1 antigen,Zinc oxide nanoparticles
更新于2025-09-19 17:13:59
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Higha??Performance Ultravioleta??Visible Lighta??Sensitive 2Da??MoS <sub/>2</sub> /1Da??ZnO Heterostructure Photodetectors
摘要： Two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have recently attracted extensive interest for building future optoelectronic devices. However, the limited light absorption, low photoresponsivity and slow response speed in visible range inhibit their further application. Here, we proposed a promising approach to realize the high-performance photodetectors (PDs) by constructing 2D-MoS2 flake/1D-ZnO nanowire mixed-dimensional heterostructures. The integration of 1D-ZnO on p-type or n-type MoS2 to form the mixed-dimensional 2D-MoS2/1D-ZnO heterostructure PDs not only broadens the light response range, but also improves the photoresponsivity and response time of 2D-MoS2 flakes. Under the 365 nm light illumination, the photoresponsivity, external quantum efficiency and response time of p-MoS2/n-ZnO PDs are as high as 24.36 A/W, 8.28 × 103 % and 0.9 s, respectively. Under 532 nm light illumination, the photoresponsivity, external quantum efficiency and response time are estimated to be 0.35 A/W, 80.9 % and 140 ms, respectively. These properties are superior or comparable to the performance of other reported 2D-MoS2 flake PDs. This work provides a possible strategy for the realization of high-performance optoelectronic devices by the integration of 2D-MoS2 and 1D-ZnO to form mixed-dimensional heterostructures.
关键词： zinc oxide,photodetectors,Heterostructure,low-dimension,molybdenum disulfide
更新于2025-09-19 17:13:59
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High Efficiency Quantum Dot Light-Emitting Diode by Solution Printing of Zinc Oxide Nanoparticles
摘要： Quantum dot light-emitting diodes (QLEDs) have attracted considerable attention owing to the narrow emission spectra, wide color gamut, high quantum yield and size-controlled emission wavelength. Zinc oxide nanoparticles have been widely used as an electron transport layer (ETL) in QLEDs due to their excellent electrical properties. In this study, we compared the efficiency of QLEDs with organic and zinc oxide ETLs in viewpoint of the charge balance. The QLEDs were constructed using ZnO nanoparticles with an average particle size of 3 nm or 3TPYMB as the ETL materials. CdSe/ZnS quantum dots and poly-TPD were used as a light-emitting elements and hole transporting material, respectively. The QLED with 3TPYMB ETL exhibited current efficiency of 7.71 cd/A, while the efficiency of the QLED using ZnO nanoparticles was significantly improved to 38.76 cd/A. Such a substantial improvement of emission efficiency in the QLEDs with ZnO ETL was attributed to the much better charge balance by the ZnO.
关键词： Solution Printing,Zinc Oxide Nanoparticles,Quantum Dot Light-Emitting Diode
更新于2025-09-19 17:13:59
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All-inorganic, hole-transporting-layer-free, carbon-based CsPbIBr2 planar solar cells with ZnO as electron-transporting materials
摘要： In this paper, all-inorganic, hole-transporting-layer-free (HTLF), carbon-based CsPbIBr2 planar solar cells with zinc oxide (ZnO) as electron-transporting materials (ETMs) were studied for the first time. The reported all-inorganic, HTLF, carbon-based cesium lead iodide dibromide (CsPbIBr2) solar cells used titanium dioxide (TiO2) as ETMs, which usually required a high sintering temperature of 500 °C. Here, ZnO ETMs were annealed at 120 °C. The highest power conversion efficiency (PCE) of 7.60%, with a short-circuit current (Jsc) of 11.60 mA/cm2, an open-circuit voltage (Voc) of 1.03 V and the fill factor (FF) of 0.63, was obtained. Furthermore, the thermal and humid stabilities of the solar cells were studied. The perovskite solar cells were placed at 10% humidity and room temperature for 624 h and the PCE of perovskite solar cells only decreased by 10%. While the perovskite solar cells were placed at 80 °C and 0% humidity for 192 h, the PCE of the solar cells decreased by 4%.
关键词： Carbon electrode,Zinc oxide,All-inorganic perovskite solar cells
更新于2025-09-19 17:13:59