研究目的

To develop a transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In2O3 (ITO) film as a hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode.

研究成果

The study successfully demonstrated the fabrication of ACO integrated ITO anodes as a promising alternative to acidic PEDOT:PSS HIL for QD-LEDs. The p-type ACO films showed effective hole injection properties, and the integrated anodes exhibited acceptable sheet resistance and optical transmittance for QD-LED applications. The successful operation of PEDOT:PSS-free QD-LEDs with ACO integrated ITO electrodes indicates a simpler and more cost-effective fabrication process, along with improved device reliability by eliminating interfacial reactions caused by the acidic PEDOT:PSS layer.

研究不足

The study acknowledges the limitations in the formation of p-type metal oxide HIL due to strong localization of the upper edge of the valence band and very low carrier mobility caused by oxygen p asymmetric orbitals. Additionally, the sputtered p-type ACO films showed lower carrier mobility than previously reported electroplated ACO film, attributed to very thin thickness below 20 nm which is not enough for effective crystallization.