研究目的
Investigating a new approach for fabricating site-controlled structures without destruction on a monocrystalline silicon surface via local anodic oxidation (LAO) and two-step postetching.
研究成果
The study successfully demonstrated a nondestructive method for fabricating site-controlled structures on monocrystalline silicon using LAO and two-step postetching. The fabricated structures showed no difference in conductivity compared to the unprocessed silicon substrate, and HRTEM confirmed an almost perfect crystal lattice, indicating no crystal defects. This method provides a new route for realizing nondestructive optical substrates.
研究不足
The fabrication is highly sensitive to experimental conditions such as relative humidity, temperature, applied normal load, and frictional pair. The method requires precise control over etching times and conditions to achieve nondestructive structures.
